Crystallization mechanism of a-Si and a-Ge by soft X-ray irradiation

Shota Kino; Akira Heya; Yuki Nonomura; Naoto Matsuo; Kazuhiro Kanda; Shuji Miyamoto; Sho Amano; Takayasu Mochizuki; Kaoru Toko; Taizoh Sadoh; Masanobu Miyao

Crystallization mechanism of a-Si and a-Ge by soft X-ray irradiation

Shota Kino, Akira Heya, Yuki Nonomura, Naoto Matsuo, Kazuhiro Kanda, Shuji Miyamoto, Sho Amano, Takayasu Mochizuki, Kaoru Toko, Taizoh Sadoh, Masanobu Miyao

Electronic Devices

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

We investigated a low-temperature crystallization of a- Si and a-Ge films by the synchrotron radiation soft X-ray irradiation at storage-ring current of 25-220 mA. It is found that the crystallization temperatures of a-Si and a-Ge were decreased from 680 to 580°C and from 500 to 390°C. These decreasements relate effects of enhancement atomic migration via electron excitation at valence band and core level.

Original language	English
Title of host publication	Proceedings of the 19th International Workshop on Active-Matrix Flatpanel Displays and Devices - TFT Technologies and FPD Materials, AM-FPD 2012
Pages	223-226
Number of pages	4
Publication status	Published - Oct 31 2012
Event	19th International Workshop on Active-Matrix Flatpanel Displays and Devices - TFT Technologies and FPD Materials, AM-FPD 2012 - Kyoto, Japan Duration: Jul 4 2012 → Jul 6 2012

Publication series

Name	Proceedings of the 19th International Workshop on Active-Matrix Flatpanel Displays and Devices - TFT Technologies and FPD Materials, AM-FPD 2012

Other

Other	19th International Workshop on Active-Matrix Flatpanel Displays and Devices - TFT Technologies and FPD Materials, AM-FPD 2012
Country	Japan
City	Kyoto
Period	7/4/12 → 7/6/12

All Science Journal Classification (ASJC) codes

Control and Systems Engineering
Electrical and Electronic Engineering

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Kino, S., Heya, A., Nonomura, Y., Matsuo, N., Kanda, K., Miyamoto, S., Amano, S., Mochizuki, T., Toko, K., Sadoh, T., & Miyao, M. (2012). Crystallization mechanism of a-Si and a-Ge by soft X-ray irradiation. In Proceedings of the 19th International Workshop on Active-Matrix Flatpanel Displays and Devices - TFT Technologies and FPD Materials, AM-FPD 2012 (pp. 223-226). [6294889] (Proceedings of the 19th International Workshop on Active-Matrix Flatpanel Displays and Devices - TFT Technologies and FPD Materials, AM-FPD 2012).

Crystallization mechanism of a-Si and a-Ge by soft X-ray irradiation. / Kino, Shota; Heya, Akira; Nonomura, Yuki; Matsuo, Naoto; Kanda, Kazuhiro; Miyamoto, Shuji; Amano, Sho; Mochizuki, Takayasu; Toko, Kaoru; Sadoh, Taizoh; Miyao, Masanobu.

Proceedings of the 19th International Workshop on Active-Matrix Flatpanel Displays and Devices - TFT Technologies and FPD Materials, AM-FPD 2012. 2012. p. 223-226 6294889 (Proceedings of the 19th International Workshop on Active-Matrix Flatpanel Displays and Devices - TFT Technologies and FPD Materials, AM-FPD 2012).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Kino, S, Heya, A, Nonomura, Y, Matsuo, N, Kanda, K, Miyamoto, S, Amano, S, Mochizuki, T, Toko, K, Sadoh, T & Miyao, M 2012, Crystallization mechanism of a-Si and a-Ge by soft X-ray irradiation. in Proceedings of the 19th International Workshop on Active-Matrix Flatpanel Displays and Devices - TFT Technologies and FPD Materials, AM-FPD 2012., 6294889, Proceedings of the 19th International Workshop on Active-Matrix Flatpanel Displays and Devices - TFT Technologies and FPD Materials, AM-FPD 2012, pp. 223-226, 19th International Workshop on Active-Matrix Flatpanel Displays and Devices - TFT Technologies and FPD Materials, AM-FPD 2012, Kyoto, Japan, 7/4/12.

Kino S, Heya A, Nonomura Y, Matsuo N, Kanda K, Miyamoto S et al. Crystallization mechanism of a-Si and a-Ge by soft X-ray irradiation. In Proceedings of the 19th International Workshop on Active-Matrix Flatpanel Displays and Devices - TFT Technologies and FPD Materials, AM-FPD 2012. 2012. p. 223-226. 6294889. (Proceedings of the 19th International Workshop on Active-Matrix Flatpanel Displays and Devices - TFT Technologies and FPD Materials, AM-FPD 2012).

Kino, Shota ; Heya, Akira ; Nonomura, Yuki ; Matsuo, Naoto ; Kanda, Kazuhiro ; Miyamoto, Shuji ; Amano, Sho ; Mochizuki, Takayasu ; Toko, Kaoru ; Sadoh, Taizoh ; Miyao, Masanobu. / Crystallization mechanism of a-Si and a-Ge by soft X-ray irradiation. Proceedings of the 19th International Workshop on Active-Matrix Flatpanel Displays and Devices - TFT Technologies and FPD Materials, AM-FPD 2012. 2012. pp. 223-226 (Proceedings of the 19th International Workshop on Active-Matrix Flatpanel Displays and Devices - TFT Technologies and FPD Materials, AM-FPD 2012).

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abstract = "We investigated a low-temperature crystallization of a- Si and a-Ge films by the synchrotron radiation soft X-ray irradiation at storage-ring current of 25-220 mA. It is found that the crystallization temperatures of a-Si and a-Ge were decreased from 680 to 580°C and from 500 to 390°C. These decreasements relate effects of enhancement atomic migration via electron excitation at valence band and core level.",

author = "Shota Kino and Akira Heya and Yuki Nonomura and Naoto Matsuo and Kazuhiro Kanda and Shuji Miyamoto and Sho Amano and Takayasu Mochizuki and Kaoru Toko and Taizoh Sadoh and Masanobu Miyao",

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AU - Kino, Shota

AU - Heya, Akira

AU - Nonomura, Yuki

AU - Matsuo, Naoto

AU - Kanda, Kazuhiro

AU - Miyamoto, Shuji

AU - Amano, Sho

AU - Mochizuki, Takayasu

AU - Toko, Kaoru

AU - Sadoh, Taizoh

AU - Miyao, Masanobu

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Y1 - 2012/10/31

N2 - We investigated a low-temperature crystallization of a- Si and a-Ge films by the synchrotron radiation soft X-ray irradiation at storage-ring current of 25-220 mA. It is found that the crystallization temperatures of a-Si and a-Ge were decreased from 680 to 580°C and from 500 to 390°C. These decreasements relate effects of enhancement atomic migration via electron excitation at valence band and core level.

AB - We investigated a low-temperature crystallization of a- Si and a-Ge films by the synchrotron radiation soft X-ray irradiation at storage-ring current of 25-220 mA. It is found that the crystallization temperatures of a-Si and a-Ge were decreased from 680 to 580°C and from 500 to 390°C. These decreasements relate effects of enhancement atomic migration via electron excitation at valence band and core level.

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BT - Proceedings of the 19th International Workshop on Active-Matrix Flatpanel Displays and Devices - TFT Technologies and FPD Materials, AM-FPD 2012

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