Crystallization mechanism of a-Si and a-Ge by soft X-ray irradiation

Shota Kino; Akira Heya; Yuki Nonomura; Naoto Matsuo; Kazuhiro Kanda; Shuji Miyamoto; Sho Amano; Takayasu Mochizuki; Kaoru Toko; Taizoh Sadoh; Masanobu Miyao

Crystallization mechanism of a-Si and a-Ge by soft X-ray irradiation

Shota Kino, Akira Heya, Yuki Nonomura, Naoto Matsuo, Kazuhiro Kanda, Shuji Miyamoto, Sho Amano, Takayasu Mochizuki, Kaoru Toko, Taizoh Sadoh, Masanobu Miyao

Electronic Devices

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

We investigated a low-temperature crystallization of a- Si and a-Ge films by the synchrotron radiation soft X-ray irradiation at storage-ring current of 25-220 mA. It is found that the crystallization temperatures of a-Si and a-Ge were decreased from 680 to 580°C and from 500 to 390°C. These decreasements relate effects of enhancement atomic migration via electron excitation at valence band and core level.

Original language	English
Title of host publication	Proceedings of the 19th International Workshop on Active-Matrix Flatpanel Displays and Devices - TFT Technologies and FPD Materials, AM-FPD 2012
Pages	223-226
Number of pages	4
Publication status	Published - 2012
Event	19th International Workshop on Active-Matrix Flatpanel Displays and Devices - TFT Technologies and FPD Materials, AM-FPD 2012 - Kyoto, Japan Duration: Jul 4 2012 → Jul 6 2012

Publication series

Name	Proceedings of the 19th International Workshop on Active-Matrix Flatpanel Displays and Devices - TFT Technologies and FPD Materials, AM-FPD 2012

Other

Other	19th International Workshop on Active-Matrix Flatpanel Displays and Devices - TFT Technologies and FPD Materials, AM-FPD 2012
Country/Territory	Japan
City	Kyoto
Period	7/4/12 → 7/6/12

All Science Journal Classification (ASJC) codes

Control and Systems Engineering
Electrical and Electronic Engineering

Cite this

Kino, S., Heya, A., Nonomura, Y., Matsuo, N., Kanda, K., Miyamoto, S., Amano, S., Mochizuki, T., Toko, K., Sadoh, T., & Miyao, M. (2012). Crystallization mechanism of a-Si and a-Ge by soft X-ray irradiation. In Proceedings of the 19th International Workshop on Active-Matrix Flatpanel Displays and Devices - TFT Technologies and FPD Materials, AM-FPD 2012 (pp. 223-226). [6294889] (Proceedings of the 19th International Workshop on Active-Matrix Flatpanel Displays and Devices - TFT Technologies and FPD Materials, AM-FPD 2012).

Crystallization mechanism of a-Si and a-Ge by soft X-ray irradiation. / Kino, Shota; Heya, Akira; Nonomura, Yuki et al.

Proceedings of the 19th International Workshop on Active-Matrix Flatpanel Displays and Devices - TFT Technologies and FPD Materials, AM-FPD 2012. 2012. p. 223-226 6294889 (Proceedings of the 19th International Workshop on Active-Matrix Flatpanel Displays and Devices - TFT Technologies and FPD Materials, AM-FPD 2012).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Kino, S, Heya, A, Nonomura, Y, Matsuo, N, Kanda, K, Miyamoto, S, Amano, S, Mochizuki, T, Toko, K, Sadoh, T & Miyao, M 2012, Crystallization mechanism of a-Si and a-Ge by soft X-ray irradiation. in Proceedings of the 19th International Workshop on Active-Matrix Flatpanel Displays and Devices - TFT Technologies and FPD Materials, AM-FPD 2012., 6294889, Proceedings of the 19th International Workshop on Active-Matrix Flatpanel Displays and Devices - TFT Technologies and FPD Materials, AM-FPD 2012, pp. 223-226, 19th International Workshop on Active-Matrix Flatpanel Displays and Devices - TFT Technologies and FPD Materials, AM-FPD 2012, Kyoto, Japan, 7/4/12.

Kino S, Heya A, Nonomura Y, Matsuo N, Kanda K, Miyamoto S et al. Crystallization mechanism of a-Si and a-Ge by soft X-ray irradiation. In Proceedings of the 19th International Workshop on Active-Matrix Flatpanel Displays and Devices - TFT Technologies and FPD Materials, AM-FPD 2012. 2012. p. 223-226. 6294889. (Proceedings of the 19th International Workshop on Active-Matrix Flatpanel Displays and Devices - TFT Technologies and FPD Materials, AM-FPD 2012).

Kino, Shota ; Heya, Akira ; Nonomura, Yuki et al. / Crystallization mechanism of a-Si and a-Ge by soft X-ray irradiation. Proceedings of the 19th International Workshop on Active-Matrix Flatpanel Displays and Devices - TFT Technologies and FPD Materials, AM-FPD 2012. 2012. pp. 223-226 (Proceedings of the 19th International Workshop on Active-Matrix Flatpanel Displays and Devices - TFT Technologies and FPD Materials, AM-FPD 2012).

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title = "Crystallization mechanism of a-Si and a-Ge by soft X-ray irradiation",

abstract = "We investigated a low-temperature crystallization of a- Si and a-Ge films by the synchrotron radiation soft X-ray irradiation at storage-ring current of 25-220 mA. It is found that the crystallization temperatures of a-Si and a-Ge were decreased from 680 to 580°C and from 500 to 390°C. These decreasements relate effects of enhancement atomic migration via electron excitation at valence band and core level.",

author = "Shota Kino and Akira Heya and Yuki Nonomura and Naoto Matsuo and Kazuhiro Kanda and Shuji Miyamoto and Sho Amano and Takayasu Mochizuki and Kaoru Toko and Taizoh Sadoh and Masanobu Miyao",

year = "2012",

language = "English",

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series = "Proceedings of the 19th International Workshop on Active-Matrix Flatpanel Displays and Devices - TFT Technologies and FPD Materials, AM-FPD 2012",

pages = "223--226",

booktitle = "Proceedings of the 19th International Workshop on Active-Matrix Flatpanel Displays and Devices - TFT Technologies and FPD Materials, AM-FPD 2012",

note = "19th International Workshop on Active-Matrix Flatpanel Displays and Devices - TFT Technologies and FPD Materials, AM-FPD 2012 ; Conference date: 04-07-2012 Through 06-07-2012",

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T1 - Crystallization mechanism of a-Si and a-Ge by soft X-ray irradiation

AU - Kino, Shota

AU - Heya, Akira

AU - Nonomura, Yuki

AU - Matsuo, Naoto

AU - Kanda, Kazuhiro

AU - Miyamoto, Shuji

AU - Amano, Sho

AU - Mochizuki, Takayasu

AU - Toko, Kaoru

AU - Sadoh, Taizoh

AU - Miyao, Masanobu

PY - 2012

Y1 - 2012

N2 - We investigated a low-temperature crystallization of a- Si and a-Ge films by the synchrotron radiation soft X-ray irradiation at storage-ring current of 25-220 mA. It is found that the crystallization temperatures of a-Si and a-Ge were decreased from 680 to 580°C and from 500 to 390°C. These decreasements relate effects of enhancement atomic migration via electron excitation at valence band and core level.

AB - We investigated a low-temperature crystallization of a- Si and a-Ge films by the synchrotron radiation soft X-ray irradiation at storage-ring current of 25-220 mA. It is found that the crystallization temperatures of a-Si and a-Ge were decreased from 680 to 580°C and from 500 to 390°C. These decreasements relate effects of enhancement atomic migration via electron excitation at valence band and core level.

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M3 - Conference contribution

AN - SCOPUS:84867907025

SN - 9781467303996

T3 - Proceedings of the 19th International Workshop on Active-Matrix Flatpanel Displays and Devices - TFT Technologies and FPD Materials, AM-FPD 2012

SP - 223

EP - 226

BT - Proceedings of the 19th International Workshop on Active-Matrix Flatpanel Displays and Devices - TFT Technologies and FPD Materials, AM-FPD 2012

T2 - 19th International Workshop on Active-Matrix Flatpanel Displays and Devices - TFT Technologies and FPD Materials, AM-FPD 2012

Y2 - 4 July 2012 through 6 July 2012

ER -

Crystallization mechanism of a-Si and a-Ge by soft X-ray irradiation

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