Abstract
We investigated a low-temperature crystallization of a- Si and a-Ge films by the synchrotron radiation soft X-ray irradiation at storage-ring current of 25-220 mA. It is found that the crystallization temperatures of a-Si and a-Ge were decreased from 680 to 580°C and from 500 to 390°C. These decreasements relate effects of enhancement atomic migration via electron excitation at valence band and core level.
| Original language | English |
|---|---|
| Title of host publication | Proceedings of the 19th International Workshop on Active-Matrix Flatpanel Displays and Devices - TFT Technologies and FPD Materials, AM-FPD 2012 |
| Pages | 223-226 |
| Number of pages | 4 |
| Publication status | Published - Oct 31 2012 |
| Event | 19th International Workshop on Active-Matrix Flatpanel Displays and Devices - TFT Technologies and FPD Materials, AM-FPD 2012 - Kyoto, Japan Duration: Jul 4 2012 → Jul 6 2012 |
Publication series
| Name | Proceedings of the 19th International Workshop on Active-Matrix Flatpanel Displays and Devices - TFT Technologies and FPD Materials, AM-FPD 2012 |
|---|
Other
| Other | 19th International Workshop on Active-Matrix Flatpanel Displays and Devices - TFT Technologies and FPD Materials, AM-FPD 2012 |
|---|---|
| Country | Japan |
| City | Kyoto |
| Period | 7/4/12 → 7/6/12 |
Fingerprint
All Science Journal Classification (ASJC) codes
- Control and Systems Engineering
- Electrical and Electronic Engineering
Cite this
Crystallization mechanism of a-Si and a-Ge by soft X-ray irradiation. / Kino, Shota; Heya, Akira; Nonomura, Yuki; Matsuo, Naoto; Kanda, Kazuhiro; Miyamoto, Shuji; Amano, Sho; Mochizuki, Takayasu; Toko, Kaoru; Sadoh, Taizoh; Miyao, Masanobu.
Proceedings of the 19th International Workshop on Active-Matrix Flatpanel Displays and Devices - TFT Technologies and FPD Materials, AM-FPD 2012. 2012. p. 223-226 6294889 (Proceedings of the 19th International Workshop on Active-Matrix Flatpanel Displays and Devices - TFT Technologies and FPD Materials, AM-FPD 2012).Research output: Chapter in Book/Report/Conference proceeding › Conference contribution
}
TY - GEN
T1 - Crystallization mechanism of a-Si and a-Ge by soft X-ray irradiation
AU - Kino, Shota
AU - Heya, Akira
AU - Nonomura, Yuki
AU - Matsuo, Naoto
AU - Kanda, Kazuhiro
AU - Miyamoto, Shuji
AU - Amano, Sho
AU - Mochizuki, Takayasu
AU - Toko, Kaoru
AU - Sadoh, Taizoh
AU - Miyao, Masanobu
PY - 2012/10/31
Y1 - 2012/10/31
N2 - We investigated a low-temperature crystallization of a- Si and a-Ge films by the synchrotron radiation soft X-ray irradiation at storage-ring current of 25-220 mA. It is found that the crystallization temperatures of a-Si and a-Ge were decreased from 680 to 580°C and from 500 to 390°C. These decreasements relate effects of enhancement atomic migration via electron excitation at valence band and core level.
AB - We investigated a low-temperature crystallization of a- Si and a-Ge films by the synchrotron radiation soft X-ray irradiation at storage-ring current of 25-220 mA. It is found that the crystallization temperatures of a-Si and a-Ge were decreased from 680 to 580°C and from 500 to 390°C. These decreasements relate effects of enhancement atomic migration via electron excitation at valence band and core level.
UR - http://www.scopus.com/inward/record.url?scp=84867907025&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=84867907025&partnerID=8YFLogxK
M3 - Conference contribution
AN - SCOPUS:84867907025
SN - 9781467303996
T3 - Proceedings of the 19th International Workshop on Active-Matrix Flatpanel Displays and Devices - TFT Technologies and FPD Materials, AM-FPD 2012
SP - 223
EP - 226
BT - Proceedings of the 19th International Workshop on Active-Matrix Flatpanel Displays and Devices - TFT Technologies and FPD Materials, AM-FPD 2012
ER -