TY - GEN
T1 - Crystallization mechanism of a-Si and a-Ge by soft X-ray irradiation
AU - Kino, Shota
AU - Heya, Akira
AU - Nonomura, Yuki
AU - Matsuo, Naoto
AU - Kanda, Kazuhiro
AU - Miyamoto, Shuji
AU - Amano, Sho
AU - Mochizuki, Takayasu
AU - Toko, Kaoru
AU - Sadoh, Taizoh
AU - Miyao, Masanobu
PY - 2012
Y1 - 2012
N2 - We investigated a low-temperature crystallization of a- Si and a-Ge films by the synchrotron radiation soft X-ray irradiation at storage-ring current of 25-220 mA. It is found that the crystallization temperatures of a-Si and a-Ge were decreased from 680 to 580°C and from 500 to 390°C. These decreasements relate effects of enhancement atomic migration via electron excitation at valence band and core level.
AB - We investigated a low-temperature crystallization of a- Si and a-Ge films by the synchrotron radiation soft X-ray irradiation at storage-ring current of 25-220 mA. It is found that the crystallization temperatures of a-Si and a-Ge were decreased from 680 to 580°C and from 500 to 390°C. These decreasements relate effects of enhancement atomic migration via electron excitation at valence band and core level.
UR - http://www.scopus.com/inward/record.url?scp=84867907025&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=84867907025&partnerID=8YFLogxK
M3 - Conference contribution
AN - SCOPUS:84867907025
SN - 9781467303996
T3 - Proceedings of the 19th International Workshop on Active-Matrix Flatpanel Displays and Devices - TFT Technologies and FPD Materials, AM-FPD 2012
SP - 223
EP - 226
BT - Proceedings of the 19th International Workshop on Active-Matrix Flatpanel Displays and Devices - TFT Technologies and FPD Materials, AM-FPD 2012
T2 - 19th International Workshop on Active-Matrix Flatpanel Displays and Devices - TFT Technologies and FPD Materials, AM-FPD 2012
Y2 - 4 July 2012 through 6 July 2012
ER -