Crystallization mechanism of a-Si and a-Ge by soft X-ray irradiation

Shota Kino, Akira Heya, Yuki Nonomura, Naoto Matsuo, Kazuhiro Kanda, Shuji Miyamoto, Sho Amano, Takayasu Mochizuki, Kaoru Toko, Taizoh Sadoh, Masanobu Miyao

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

We investigated a low-temperature crystallization of a- Si and a-Ge films by the synchrotron radiation soft X-ray irradiation at storage-ring current of 25-220 mA. It is found that the crystallization temperatures of a-Si and a-Ge were decreased from 680 to 580°C and from 500 to 390°C. These decreasements relate effects of enhancement atomic migration via electron excitation at valence band and core level.

Original languageEnglish
Title of host publicationProceedings of the 19th International Workshop on Active-Matrix Flatpanel Displays and Devices - TFT Technologies and FPD Materials, AM-FPD 2012
Pages223-226
Number of pages4
Publication statusPublished - Oct 31 2012
Event19th International Workshop on Active-Matrix Flatpanel Displays and Devices - TFT Technologies and FPD Materials, AM-FPD 2012 - Kyoto, Japan
Duration: Jul 4 2012Jul 6 2012

Publication series

NameProceedings of the 19th International Workshop on Active-Matrix Flatpanel Displays and Devices - TFT Technologies and FPD Materials, AM-FPD 2012

Other

Other19th International Workshop on Active-Matrix Flatpanel Displays and Devices - TFT Technologies and FPD Materials, AM-FPD 2012
CountryJapan
CityKyoto
Period7/4/127/6/12

All Science Journal Classification (ASJC) codes

  • Control and Systems Engineering
  • Electrical and Electronic Engineering

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