Abstract
We investigated crystallization mechanism of a-Si 0.5Ge 0.5 film by excimer-laser annealing (ELA) at energy density of 50-70mJ/cm 2 in comparison with a method of synchrotron radiation soft X-ray irradiation at storage ring current of 50-220 mA. The nucleation mechanism of Si 0.5Ge 0.5 via ELA will be discussed by considering the soft X-ray method.
| Original language | English |
|---|---|
| Title of host publication | IMFEDK 2012 - 2012 International Meeting for Future of Electron Devices, Kansai |
| Pages | 98-99 |
| Number of pages | 2 |
| DOIs | |
| Publication status | Published - Jul 30 2012 |
| Event | 10th International Meeting for Future of Electron Devices, Kansai, IMFEDK 2012 - Osaka, Japan Duration: May 9 2012 → May 11 2012 |
Publication series
| Name | IMFEDK 2012 - 2012 International Meeting for Future of Electron Devices, Kansai |
|---|
Other
| Other | 10th International Meeting for Future of Electron Devices, Kansai, IMFEDK 2012 |
|---|---|
| Country | Japan |
| City | Osaka |
| Period | 5/9/12 → 5/11/12 |
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All Science Journal Classification (ASJC) codes
- Electrical and Electronic Engineering
Cite this
Crystallization mechanism of thick a-Si 0.5Ge 0.5 film by excimer laser annealing. / Kino, Shota; Nonomura, Yuki; Heya, Akira; Matsuo, Naoto; Kanda, Kazuhiro; Miyamoto, Shuji; Amano, Sho; Mochizuki, Takayasu; Toko, Kaoru; Sadoh, Taizoh; Miyao, Masanobu.
IMFEDK 2012 - 2012 International Meeting for Future of Electron Devices, Kansai. 2012. p. 98-99 6218600 (IMFEDK 2012 - 2012 International Meeting for Future of Electron Devices, Kansai).Research output: Chapter in Book/Report/Conference proceeding › Conference contribution
}
TY - GEN
T1 - Crystallization mechanism of thick a-Si 0.5Ge 0.5 film by excimer laser annealing
AU - Kino, Shota
AU - Nonomura, Yuki
AU - Heya, Akira
AU - Matsuo, Naoto
AU - Kanda, Kazuhiro
AU - Miyamoto, Shuji
AU - Amano, Sho
AU - Mochizuki, Takayasu
AU - Toko, Kaoru
AU - Sadoh, Taizoh
AU - Miyao, Masanobu
PY - 2012/7/30
Y1 - 2012/7/30
N2 - We investigated crystallization mechanism of a-Si 0.5Ge 0.5 film by excimer-laser annealing (ELA) at energy density of 50-70mJ/cm 2 in comparison with a method of synchrotron radiation soft X-ray irradiation at storage ring current of 50-220 mA. The nucleation mechanism of Si 0.5Ge 0.5 via ELA will be discussed by considering the soft X-ray method.
AB - We investigated crystallization mechanism of a-Si 0.5Ge 0.5 film by excimer-laser annealing (ELA) at energy density of 50-70mJ/cm 2 in comparison with a method of synchrotron radiation soft X-ray irradiation at storage ring current of 50-220 mA. The nucleation mechanism of Si 0.5Ge 0.5 via ELA will be discussed by considering the soft X-ray method.
UR - http://www.scopus.com/inward/record.url?scp=84864240963&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=84864240963&partnerID=8YFLogxK
U2 - 10.1109/IMFEDK.2012.6218600
DO - 10.1109/IMFEDK.2012.6218600
M3 - Conference contribution
AN - SCOPUS:84864240963
SN - 9781467308359
T3 - IMFEDK 2012 - 2012 International Meeting for Future of Electron Devices, Kansai
SP - 98
EP - 99
BT - IMFEDK 2012 - 2012 International Meeting for Future of Electron Devices, Kansai
ER -