Crystallization mechanism of thick a-Si 0.5Ge 0.5 film by excimer laser annealing

Shota Kino; Yuki Nonomura; Akira Heya; Naoto Matsuo; Kazuhiro Kanda; Shuji Miyamoto; Sho Amano; Takayasu Mochizuki; Kaoru Toko; Taizoh Sadoh; Masanobu Miyao

doi:10.1109/IMFEDK.2012.6218600

Crystallization mechanism of thick a-Si _0.5Ge _0.5 film by excimer laser annealing

Shota Kino, Yuki Nonomura, Akira Heya, Naoto Matsuo, Kazuhiro Kanda, Shuji Miyamoto, Sho Amano, Takayasu Mochizuki, Kaoru Toko, Taizoh Sadoh, Masanobu Miyao

Electronic Devices

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

We investigated crystallization mechanism of a-Si _0.5Ge _0.5 film by excimer-laser annealing (ELA) at energy density of 50-70mJ/cm ² in comparison with a method of synchrotron radiation soft X-ray irradiation at storage ring current of 50-220 mA. The nucleation mechanism of Si _0.5Ge _0.5 via ELA will be discussed by considering the soft X-ray method.

Original language	English
Title of host publication	IMFEDK 2012 - 2012 International Meeting for Future of Electron Devices, Kansai
Pages	98-99
Number of pages	2
DOIs	https://doi.org/10.1109/IMFEDK.2012.6218600
Publication status	Published - 2012
Event	10th International Meeting for Future of Electron Devices, Kansai, IMFEDK 2012 - Osaka, Japan Duration: May 9 2012 → May 11 2012

Publication series

Name	IMFEDK 2012 - 2012 International Meeting for Future of Electron Devices, Kansai

Other

Other	10th International Meeting for Future of Electron Devices, Kansai, IMFEDK 2012
Country/Territory	Japan
City	Osaka
Period	5/9/12 → 5/11/12

All Science Journal Classification (ASJC) codes

Electrical and Electronic Engineering

Access to Document

10.1109/IMFEDK.2012.6218600

Cite this

Kino, S., Nonomura, Y., Heya, A., Matsuo, N., Kanda, K., Miyamoto, S., Amano, S., Mochizuki, T., Toko, K., Sadoh, T., & Miyao, M. (2012). Crystallization mechanism of thick a-Si _0.5Ge _0.5 film by excimer laser annealing. In IMFEDK 2012 - 2012 International Meeting for Future of Electron Devices, Kansai (pp. 98-99). [6218600] (IMFEDK 2012 - 2012 International Meeting for Future of Electron Devices, Kansai). https://doi.org/10.1109/IMFEDK.2012.6218600

Crystallization mechanism of thick a-Si _0.5Ge _0.5 film by excimer laser annealing. / Kino, Shota; Nonomura, Yuki; Heya, Akira; Matsuo, Naoto; Kanda, Kazuhiro; Miyamoto, Shuji; Amano, Sho; Mochizuki, Takayasu; Toko, Kaoru; Sadoh, Taizoh; Miyao, Masanobu.

IMFEDK 2012 - 2012 International Meeting for Future of Electron Devices, Kansai. 2012. p. 98-99 6218600 (IMFEDK 2012 - 2012 International Meeting for Future of Electron Devices, Kansai).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Kino, S, Nonomura, Y, Heya, A, Matsuo, N, Kanda, K, Miyamoto, S, Amano, S, Mochizuki, T, Toko, K, Sadoh, T & Miyao, M 2012, Crystallization mechanism of thick a-Si _0.5Ge _0.5 film by excimer laser annealing. in IMFEDK 2012 - 2012 International Meeting for Future of Electron Devices, Kansai., 6218600, IMFEDK 2012 - 2012 International Meeting for Future of Electron Devices, Kansai, pp. 98-99, 10th International Meeting for Future of Electron Devices, Kansai, IMFEDK 2012, Osaka, Japan, 5/9/12. https://doi.org/10.1109/IMFEDK.2012.6218600

Kino S, Nonomura Y, Heya A, Matsuo N, Kanda K, Miyamoto S et al. Crystallization mechanism of thick a-Si _0.5Ge _0.5 film by excimer laser annealing. In IMFEDK 2012 - 2012 International Meeting for Future of Electron Devices, Kansai. 2012. p. 98-99. 6218600. (IMFEDK 2012 - 2012 International Meeting for Future of Electron Devices, Kansai). https://doi.org/10.1109/IMFEDK.2012.6218600

Kino, Shota ; Nonomura, Yuki ; Heya, Akira ; Matsuo, Naoto ; Kanda, Kazuhiro ; Miyamoto, Shuji ; Amano, Sho ; Mochizuki, Takayasu ; Toko, Kaoru ; Sadoh, Taizoh ; Miyao, Masanobu. / Crystallization mechanism of thick a-Si _0.5Ge _0.5 film by excimer laser annealing. IMFEDK 2012 - 2012 International Meeting for Future of Electron Devices, Kansai. 2012. pp. 98-99 (IMFEDK 2012 - 2012 International Meeting for Future of Electron Devices, Kansai).

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title = "Crystallization mechanism of thick a-Si 0.5Ge 0.5 film by excimer laser annealing",

abstract = "We investigated crystallization mechanism of a-Si 0.5Ge 0.5 film by excimer-laser annealing (ELA) at energy density of 50-70mJ/cm 2 in comparison with a method of synchrotron radiation soft X-ray irradiation at storage ring current of 50-220 mA. The nucleation mechanism of Si 0.5Ge 0.5 via ELA will be discussed by considering the soft X-ray method.",

author = "Shota Kino and Yuki Nonomura and Akira Heya and Naoto Matsuo and Kazuhiro Kanda and Shuji Miyamoto and Sho Amano and Takayasu Mochizuki and Kaoru Toko and Taizoh Sadoh and Masanobu Miyao",

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AU - Kino, Shota

AU - Nonomura, Yuki

AU - Heya, Akira

AU - Matsuo, Naoto

AU - Kanda, Kazuhiro

AU - Miyamoto, Shuji

AU - Amano, Sho

AU - Mochizuki, Takayasu

AU - Toko, Kaoru

AU - Sadoh, Taizoh

AU - Miyao, Masanobu

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AB - We investigated crystallization mechanism of a-Si 0.5Ge 0.5 film by excimer-laser annealing (ELA) at energy density of 50-70mJ/cm 2 in comparison with a method of synchrotron radiation soft X-ray irradiation at storage ring current of 50-220 mA. The nucleation mechanism of Si 0.5Ge 0.5 via ELA will be discussed by considering the soft X-ray method.

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