TY - GEN
T1 - Crystallization mechanism of thick a-Si 0.5Ge 0.5 film by excimer laser annealing
AU - Kino, Shota
AU - Nonomura, Yuki
AU - Heya, Akira
AU - Matsuo, Naoto
AU - Kanda, Kazuhiro
AU - Miyamoto, Shuji
AU - Amano, Sho
AU - Mochizuki, Takayasu
AU - Toko, Kaoru
AU - Sadoh, Taizoh
AU - Miyao, Masanobu
PY - 2012/7/30
Y1 - 2012/7/30
N2 - We investigated crystallization mechanism of a-Si 0.5Ge 0.5 film by excimer-laser annealing (ELA) at energy density of 50-70mJ/cm 2 in comparison with a method of synchrotron radiation soft X-ray irradiation at storage ring current of 50-220 mA. The nucleation mechanism of Si 0.5Ge 0.5 via ELA will be discussed by considering the soft X-ray method.
AB - We investigated crystallization mechanism of a-Si 0.5Ge 0.5 film by excimer-laser annealing (ELA) at energy density of 50-70mJ/cm 2 in comparison with a method of synchrotron radiation soft X-ray irradiation at storage ring current of 50-220 mA. The nucleation mechanism of Si 0.5Ge 0.5 via ELA will be discussed by considering the soft X-ray method.
UR - http://www.scopus.com/inward/record.url?scp=84864240963&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=84864240963&partnerID=8YFLogxK
U2 - 10.1109/IMFEDK.2012.6218600
DO - 10.1109/IMFEDK.2012.6218600
M3 - Conference contribution
AN - SCOPUS:84864240963
SN - 9781467308359
T3 - IMFEDK 2012 - 2012 International Meeting for Future of Electron Devices, Kansai
SP - 98
EP - 99
BT - IMFEDK 2012 - 2012 International Meeting for Future of Electron Devices, Kansai
T2 - 10th International Meeting for Future of Electron Devices, Kansai, IMFEDK 2012
Y2 - 9 May 2012 through 11 May 2012
ER -