Crystallization mechanism of thick a-Si 0.5Ge 0.5 film by excimer laser annealing

Shota Kino, Yuki Nonomura, Akira Heya, Naoto Matsuo, Kazuhiro Kanda, Shuji Miyamoto, Sho Amano, Takayasu Mochizuki, Kaoru Toko, Taizoh Sadoh, Masanobu Miyao

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

We investigated crystallization mechanism of a-Si 0.5Ge 0.5 film by excimer-laser annealing (ELA) at energy density of 50-70mJ/cm 2 in comparison with a method of synchrotron radiation soft X-ray irradiation at storage ring current of 50-220 mA. The nucleation mechanism of Si 0.5Ge 0.5 via ELA will be discussed by considering the soft X-ray method.

Original languageEnglish
Title of host publicationIMFEDK 2012 - 2012 International Meeting for Future of Electron Devices, Kansai
Pages98-99
Number of pages2
DOIs
Publication statusPublished - Jul 30 2012
Event10th International Meeting for Future of Electron Devices, Kansai, IMFEDK 2012 - Osaka, Japan
Duration: May 9 2012May 11 2012

Publication series

NameIMFEDK 2012 - 2012 International Meeting for Future of Electron Devices, Kansai

Other

Other10th International Meeting for Future of Electron Devices, Kansai, IMFEDK 2012
CountryJapan
CityOsaka
Period5/9/125/11/12

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Excimer lasers
Crystallization
Annealing
X rays
Storage rings
Synchrotron radiation
Nucleation
Irradiation

All Science Journal Classification (ASJC) codes

  • Electrical and Electronic Engineering

Cite this

Kino, S., Nonomura, Y., Heya, A., Matsuo, N., Kanda, K., Miyamoto, S., ... Miyao, M. (2012). Crystallization mechanism of thick a-Si 0.5Ge 0.5 film by excimer laser annealing. In IMFEDK 2012 - 2012 International Meeting for Future of Electron Devices, Kansai (pp. 98-99). [6218600] (IMFEDK 2012 - 2012 International Meeting for Future of Electron Devices, Kansai). https://doi.org/10.1109/IMFEDK.2012.6218600

Crystallization mechanism of thick a-Si 0.5Ge 0.5 film by excimer laser annealing. / Kino, Shota; Nonomura, Yuki; Heya, Akira; Matsuo, Naoto; Kanda, Kazuhiro; Miyamoto, Shuji; Amano, Sho; Mochizuki, Takayasu; Toko, Kaoru; Sadoh, Taizoh; Miyao, Masanobu.

IMFEDK 2012 - 2012 International Meeting for Future of Electron Devices, Kansai. 2012. p. 98-99 6218600 (IMFEDK 2012 - 2012 International Meeting for Future of Electron Devices, Kansai).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Kino, S, Nonomura, Y, Heya, A, Matsuo, N, Kanda, K, Miyamoto, S, Amano, S, Mochizuki, T, Toko, K, Sadoh, T & Miyao, M 2012, Crystallization mechanism of thick a-Si 0.5Ge 0.5 film by excimer laser annealing. in IMFEDK 2012 - 2012 International Meeting for Future of Electron Devices, Kansai., 6218600, IMFEDK 2012 - 2012 International Meeting for Future of Electron Devices, Kansai, pp. 98-99, 10th International Meeting for Future of Electron Devices, Kansai, IMFEDK 2012, Osaka, Japan, 5/9/12. https://doi.org/10.1109/IMFEDK.2012.6218600
Kino S, Nonomura Y, Heya A, Matsuo N, Kanda K, Miyamoto S et al. Crystallization mechanism of thick a-Si 0.5Ge 0.5 film by excimer laser annealing. In IMFEDK 2012 - 2012 International Meeting for Future of Electron Devices, Kansai. 2012. p. 98-99. 6218600. (IMFEDK 2012 - 2012 International Meeting for Future of Electron Devices, Kansai). https://doi.org/10.1109/IMFEDK.2012.6218600
Kino, Shota ; Nonomura, Yuki ; Heya, Akira ; Matsuo, Naoto ; Kanda, Kazuhiro ; Miyamoto, Shuji ; Amano, Sho ; Mochizuki, Takayasu ; Toko, Kaoru ; Sadoh, Taizoh ; Miyao, Masanobu. / Crystallization mechanism of thick a-Si 0.5Ge 0.5 film by excimer laser annealing. IMFEDK 2012 - 2012 International Meeting for Future of Electron Devices, Kansai. 2012. pp. 98-99 (IMFEDK 2012 - 2012 International Meeting for Future of Electron Devices, Kansai).
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AU - Sadoh, Taizoh

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