Abstract
We investigated crystallization processes of amorphous Si (a-Si) during the excimer laser annealing in the complete-melting and near-complete-melting conditions by using molecular dynamics simulations. The initial a-Si configuration was prepared by quenching liquid Si (l-Si) in a MD cell with a size of 50 × 50 × 150 Å3 composed of 18666 atoms. KrF excimer laser (wavelength: 248nm) annealing processes of a-Si were calculated by taking account of the change in the optical constant upon melting during a laser pulse shot with the intensity Io exp[-(t-t 0)2/σ2](Io: laser fluence, t: irradiation time). The refractive indices of a-Si and l-Si were set at n+ik=1.0+3.0i and n+ik=1.8+3.0i, respectively. The simulated results well reproduced the observed melting rate and the near-complete-melting and complete-melting conditions were obtained for Io - 160mJ/cm 2 and 180mJ/cm2, respectively. It was found that larger grains were obtained in the near-complete-melting condition. Our MD simulations also suggest that nucleation occurs first in a-Si and subsequent crystallization proceeds toward l-Si in the near-complete-melting case.
| Original language | English |
|---|---|
| Title of host publication | Materials Research Society Symposium Proceedings - Artificially Induced Grain Alignment in Thin Films |
| Pages | 179-183 |
| Number of pages | 5 |
| Volume | 1150 |
| Publication status | Published - 2009 |
| Event | 2008 MRS Fall Meeting - Boston, MA, United States Duration: Dec 2 2008 → Dec 4 2008 |
Other
| Other | 2008 MRS Fall Meeting |
|---|---|
| Country | United States |
| City | Boston, MA |
| Period | 12/2/08 → 12/4/08 |
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All Science Journal Classification (ASJC) codes
- Materials Science(all)
- Condensed Matter Physics
- Mechanical Engineering
- Mechanics of Materials
Cite this
Crystallization processes of amorphous Si during excimer laser annealing in complete-melting and near-complete-melting conditions : A molecular dynamics study. / Ogata, Tomohiko; Mitani, Takanori; Munetoh, Shinji; Motooka, Teruaki.
Materials Research Society Symposium Proceedings - Artificially Induced Grain Alignment in Thin Films. Vol. 1150 2009. p. 179-183.Research output: Chapter in Book/Report/Conference proceeding › Conference contribution
}
TY - GEN
T1 - Crystallization processes of amorphous Si during excimer laser annealing in complete-melting and near-complete-melting conditions
T2 - A molecular dynamics study
AU - Ogata, Tomohiko
AU - Mitani, Takanori
AU - Munetoh, Shinji
AU - Motooka, Teruaki
PY - 2009
Y1 - 2009
N2 - We investigated crystallization processes of amorphous Si (a-Si) during the excimer laser annealing in the complete-melting and near-complete-melting conditions by using molecular dynamics simulations. The initial a-Si configuration was prepared by quenching liquid Si (l-Si) in a MD cell with a size of 50 × 50 × 150 Å3 composed of 18666 atoms. KrF excimer laser (wavelength: 248nm) annealing processes of a-Si were calculated by taking account of the change in the optical constant upon melting during a laser pulse shot with the intensity Io exp[-(t-t 0)2/σ2](Io: laser fluence, t: irradiation time). The refractive indices of a-Si and l-Si were set at n+ik=1.0+3.0i and n+ik=1.8+3.0i, respectively. The simulated results well reproduced the observed melting rate and the near-complete-melting and complete-melting conditions were obtained for Io - 160mJ/cm 2 and 180mJ/cm2, respectively. It was found that larger grains were obtained in the near-complete-melting condition. Our MD simulations also suggest that nucleation occurs first in a-Si and subsequent crystallization proceeds toward l-Si in the near-complete-melting case.
AB - We investigated crystallization processes of amorphous Si (a-Si) during the excimer laser annealing in the complete-melting and near-complete-melting conditions by using molecular dynamics simulations. The initial a-Si configuration was prepared by quenching liquid Si (l-Si) in a MD cell with a size of 50 × 50 × 150 Å3 composed of 18666 atoms. KrF excimer laser (wavelength: 248nm) annealing processes of a-Si were calculated by taking account of the change in the optical constant upon melting during a laser pulse shot with the intensity Io exp[-(t-t 0)2/σ2](Io: laser fluence, t: irradiation time). The refractive indices of a-Si and l-Si were set at n+ik=1.0+3.0i and n+ik=1.8+3.0i, respectively. The simulated results well reproduced the observed melting rate and the near-complete-melting and complete-melting conditions were obtained for Io - 160mJ/cm 2 and 180mJ/cm2, respectively. It was found that larger grains were obtained in the near-complete-melting condition. Our MD simulations also suggest that nucleation occurs first in a-Si and subsequent crystallization proceeds toward l-Si in the near-complete-melting case.
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M3 - Conference contribution
SN - 9781605111223
VL - 1150
SP - 179
EP - 183
BT - Materials Research Society Symposium Proceedings - Artificially Induced Grain Alignment in Thin Films
ER -