TY - GEN
T1 - Crystallization processes of amorphous Si during excimer laser annealing in complete-melting and near-complete-melting conditions
T2 - 2008 MRS Fall Meeting
AU - Ogata, Tomohiko
AU - Mitani, Takanori
AU - Munetoh, Shinji
AU - Motooka, Teruaki
PY - 2009/12/1
Y1 - 2009/12/1
N2 - We investigated crystallization processes of amorphous Si (a-Si) during the excimer laser annealing in the complete-melting and near-complete-melting conditions by using molecular dynamics simulations. The initial a-Si configuration was prepared by quenching liquid Si (l-Si) in a MD cell with a size of 50 × 50 × 150 Å3 composed of 18666 atoms. KrF excimer laser (wavelength: 248nm) annealing processes of a-Si were calculated by taking account of the change in the optical constant upon melting during a laser pulse shot with the intensity Io exp[-(t-t 0)2/σ2](Io: laser fluence, t: irradiation time). The refractive indices of a-Si and l-Si were set at n+ik=1.0+3.0i and n+ik=1.8+3.0i, respectively. The simulated results well reproduced the observed melting rate and the near-complete-melting and complete-melting conditions were obtained for Io - 160mJ/cm 2 and 180mJ/cm2, respectively. It was found that larger grains were obtained in the near-complete-melting condition. Our MD simulations also suggest that nucleation occurs first in a-Si and subsequent crystallization proceeds toward l-Si in the near-complete-melting case.
AB - We investigated crystallization processes of amorphous Si (a-Si) during the excimer laser annealing in the complete-melting and near-complete-melting conditions by using molecular dynamics simulations. The initial a-Si configuration was prepared by quenching liquid Si (l-Si) in a MD cell with a size of 50 × 50 × 150 Å3 composed of 18666 atoms. KrF excimer laser (wavelength: 248nm) annealing processes of a-Si were calculated by taking account of the change in the optical constant upon melting during a laser pulse shot with the intensity Io exp[-(t-t 0)2/σ2](Io: laser fluence, t: irradiation time). The refractive indices of a-Si and l-Si were set at n+ik=1.0+3.0i and n+ik=1.8+3.0i, respectively. The simulated results well reproduced the observed melting rate and the near-complete-melting and complete-melting conditions were obtained for Io - 160mJ/cm 2 and 180mJ/cm2, respectively. It was found that larger grains were obtained in the near-complete-melting condition. Our MD simulations also suggest that nucleation occurs first in a-Si and subsequent crystallization proceeds toward l-Si in the near-complete-melting case.
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M3 - Conference contribution
AN - SCOPUS:74549192877
SN - 9781605111223
T3 - Materials Research Society Symposium Proceedings
SP - 179
EP - 183
BT - Materials Research Society Symposium Proceedings - Artificially Induced Grain Alignment in Thin Films
Y2 - 1 December 2008 through 3 December 2008
ER -