Crystallization processes of amorphous Si during excimer laser annealing in complete-melting and near-complete-melting conditions

A molecular dynamics study

Tomohiko Ogata, Takanori Mitani, Shinji Munetoh, Teruaki Motooka

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

We investigated crystallization processes of amorphous Si (a-Si) during the excimer laser annealing in the complete-melting and near-complete-melting conditions by using molecular dynamics simulations. The initial a-Si configuration was prepared by quenching liquid Si (l-Si) in a MD cell with a size of 50 × 50 × 150 Å3 composed of 18666 atoms. KrF excimer laser (wavelength: 248nm) annealing processes of a-Si were calculated by taking account of the change in the optical constant upon melting during a laser pulse shot with the intensity Io exp[-(t-t 0)22](Io: laser fluence, t: irradiation time). The refractive indices of a-Si and l-Si were set at n+ik=1.0+3.0i and n+ik=1.8+3.0i, respectively. The simulated results well reproduced the observed melting rate and the near-complete-melting and complete-melting conditions were obtained for Io - 160mJ/cm 2 and 180mJ/cm2, respectively. It was found that larger grains were obtained in the near-complete-melting condition. Our MD simulations also suggest that nucleation occurs first in a-Si and subsequent crystallization proceeds toward l-Si in the near-complete-melting case.

Original languageEnglish
Title of host publicationMaterials Research Society Symposium Proceedings - Artificially Induced Grain Alignment in Thin Films
Pages179-183
Number of pages5
Volume1150
Publication statusPublished - 2009
Event2008 MRS Fall Meeting - Boston, MA, United States
Duration: Dec 2 2008Dec 4 2008

Other

Other2008 MRS Fall Meeting
CountryUnited States
CityBoston, MA
Period12/2/0812/4/08

Fingerprint

laser annealing
Excimer lasers
Crystallization
excimer lasers
Molecular dynamics
Melting
melting
Annealing
crystallization
molecular dynamics
Io
Liquids
liquids
Optical constants
shot
lasers
Quenching
Laser pulses
Refractive index
fluence

All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanical Engineering
  • Mechanics of Materials

Cite this

Ogata, T., Mitani, T., Munetoh, S., & Motooka, T. (2009). Crystallization processes of amorphous Si during excimer laser annealing in complete-melting and near-complete-melting conditions: A molecular dynamics study. In Materials Research Society Symposium Proceedings - Artificially Induced Grain Alignment in Thin Films (Vol. 1150, pp. 179-183)

Crystallization processes of amorphous Si during excimer laser annealing in complete-melting and near-complete-melting conditions : A molecular dynamics study. / Ogata, Tomohiko; Mitani, Takanori; Munetoh, Shinji; Motooka, Teruaki.

Materials Research Society Symposium Proceedings - Artificially Induced Grain Alignment in Thin Films. Vol. 1150 2009. p. 179-183.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Ogata, T, Mitani, T, Munetoh, S & Motooka, T 2009, Crystallization processes of amorphous Si during excimer laser annealing in complete-melting and near-complete-melting conditions: A molecular dynamics study. in Materials Research Society Symposium Proceedings - Artificially Induced Grain Alignment in Thin Films. vol. 1150, pp. 179-183, 2008 MRS Fall Meeting, Boston, MA, United States, 12/2/08.
Ogata T, Mitani T, Munetoh S, Motooka T. Crystallization processes of amorphous Si during excimer laser annealing in complete-melting and near-complete-melting conditions: A molecular dynamics study. In Materials Research Society Symposium Proceedings - Artificially Induced Grain Alignment in Thin Films. Vol. 1150. 2009. p. 179-183
Ogata, Tomohiko ; Mitani, Takanori ; Munetoh, Shinji ; Motooka, Teruaki. / Crystallization processes of amorphous Si during excimer laser annealing in complete-melting and near-complete-melting conditions : A molecular dynamics study. Materials Research Society Symposium Proceedings - Artificially Induced Grain Alignment in Thin Films. Vol. 1150 2009. pp. 179-183
@inproceedings{34c778b1c2254defbf4646c61a06551d,
title = "Crystallization processes of amorphous Si during excimer laser annealing in complete-melting and near-complete-melting conditions: A molecular dynamics study",
abstract = "We investigated crystallization processes of amorphous Si (a-Si) during the excimer laser annealing in the complete-melting and near-complete-melting conditions by using molecular dynamics simulations. The initial a-Si configuration was prepared by quenching liquid Si (l-Si) in a MD cell with a size of 50 × 50 × 150 {\AA}3 composed of 18666 atoms. KrF excimer laser (wavelength: 248nm) annealing processes of a-Si were calculated by taking account of the change in the optical constant upon melting during a laser pulse shot with the intensity Io exp[-(t-t 0)2/σ2](Io: laser fluence, t: irradiation time). The refractive indices of a-Si and l-Si were set at n+ik=1.0+3.0i and n+ik=1.8+3.0i, respectively. The simulated results well reproduced the observed melting rate and the near-complete-melting and complete-melting conditions were obtained for Io - 160mJ/cm 2 and 180mJ/cm2, respectively. It was found that larger grains were obtained in the near-complete-melting condition. Our MD simulations also suggest that nucleation occurs first in a-Si and subsequent crystallization proceeds toward l-Si in the near-complete-melting case.",
author = "Tomohiko Ogata and Takanori Mitani and Shinji Munetoh and Teruaki Motooka",
year = "2009",
language = "English",
isbn = "9781605111223",
volume = "1150",
pages = "179--183",
booktitle = "Materials Research Society Symposium Proceedings - Artificially Induced Grain Alignment in Thin Films",

}

TY - GEN

T1 - Crystallization processes of amorphous Si during excimer laser annealing in complete-melting and near-complete-melting conditions

T2 - A molecular dynamics study

AU - Ogata, Tomohiko

AU - Mitani, Takanori

AU - Munetoh, Shinji

AU - Motooka, Teruaki

PY - 2009

Y1 - 2009

N2 - We investigated crystallization processes of amorphous Si (a-Si) during the excimer laser annealing in the complete-melting and near-complete-melting conditions by using molecular dynamics simulations. The initial a-Si configuration was prepared by quenching liquid Si (l-Si) in a MD cell with a size of 50 × 50 × 150 Å3 composed of 18666 atoms. KrF excimer laser (wavelength: 248nm) annealing processes of a-Si were calculated by taking account of the change in the optical constant upon melting during a laser pulse shot with the intensity Io exp[-(t-t 0)2/σ2](Io: laser fluence, t: irradiation time). The refractive indices of a-Si and l-Si were set at n+ik=1.0+3.0i and n+ik=1.8+3.0i, respectively. The simulated results well reproduced the observed melting rate and the near-complete-melting and complete-melting conditions were obtained for Io - 160mJ/cm 2 and 180mJ/cm2, respectively. It was found that larger grains were obtained in the near-complete-melting condition. Our MD simulations also suggest that nucleation occurs first in a-Si and subsequent crystallization proceeds toward l-Si in the near-complete-melting case.

AB - We investigated crystallization processes of amorphous Si (a-Si) during the excimer laser annealing in the complete-melting and near-complete-melting conditions by using molecular dynamics simulations. The initial a-Si configuration was prepared by quenching liquid Si (l-Si) in a MD cell with a size of 50 × 50 × 150 Å3 composed of 18666 atoms. KrF excimer laser (wavelength: 248nm) annealing processes of a-Si were calculated by taking account of the change in the optical constant upon melting during a laser pulse shot with the intensity Io exp[-(t-t 0)2/σ2](Io: laser fluence, t: irradiation time). The refractive indices of a-Si and l-Si were set at n+ik=1.0+3.0i and n+ik=1.8+3.0i, respectively. The simulated results well reproduced the observed melting rate and the near-complete-melting and complete-melting conditions were obtained for Io - 160mJ/cm 2 and 180mJ/cm2, respectively. It was found that larger grains were obtained in the near-complete-melting condition. Our MD simulations also suggest that nucleation occurs first in a-Si and subsequent crystallization proceeds toward l-Si in the near-complete-melting case.

UR - http://www.scopus.com/inward/record.url?scp=74549192877&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=74549192877&partnerID=8YFLogxK

M3 - Conference contribution

SN - 9781605111223

VL - 1150

SP - 179

EP - 183

BT - Materials Research Society Symposium Proceedings - Artificially Induced Grain Alignment in Thin Films

ER -