Crystallization to polycrystalline silicon films by underwater laser annealing and its application to thin film transistors

Emi Machida, Masahiro Horita, Yasuaki Ishikawa, Yukiharu Uraoka, Hiroshi Ikenoue

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

We performed crystallization of an amorphous silicon by laser irradiation in flowing deionized-water where Nd: YAG THG laser (wave length = 355 nm) was used for annealing. As the results, we demonstrated that the underwater laser annealing (WLA) leads to giant- and uniform-grain growth as compared to laser annealing in air (LA). It is thought that the homogenization of the temperature distribution within the Si films enhances grain growth. In addition, we successfully fabricated the poly-Si TFTs with the use of WLA poly-Si as the channel layer. The output and the transfer characteristics were clearly obtained, and thus we succeeded in the TFT operation.

Original languageEnglish
Title of host publicationProceedings of the 19th International Workshop on Active-Matrix Flatpanel Displays and Devices - TFT Technologies and FPD Materials, AM-FPD 2012
Pages111-114
Number of pages4
Publication statusPublished - Oct 31 2012
Event19th International Workshop on Active-Matrix Flatpanel Displays and Devices - TFT Technologies and FPD Materials, AM-FPD 2012 - Kyoto, Japan
Duration: Jul 4 2012Jul 6 2012

Publication series

NameProceedings of the 19th International Workshop on Active-Matrix Flatpanel Displays and Devices - TFT Technologies and FPD Materials, AM-FPD 2012

Other

Other19th International Workshop on Active-Matrix Flatpanel Displays and Devices - TFT Technologies and FPD Materials, AM-FPD 2012
CountryJapan
CityKyoto
Period7/4/127/6/12

All Science Journal Classification (ASJC) codes

  • Control and Systems Engineering
  • Electrical and Electronic Engineering

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