Crystallization to polycrystalline silicon thin film and simultaneous inactivation of electrical defects by underwater laser annealing

Emi Machida, Masahiro Horita, Yasuaki Ishikawa, Yukiharu Uraoka, Hiroshi Ikenoue

Research output: Contribution to journalArticle

15 Citations (Scopus)

Abstract

We propose a low-temperature laser annealing method of a underwater laser annealing (WLA) for polycrystalline silicon (poly-Si) films. We performed crystallization to poly-Si films by laser irradiation in flowing deionized-water where KrF excimer laser was used for annealing. We demonstrated that the maximum value of maximum grain size of WLA samples was 1.5 μm, and that of the average grain size was 2.8 times larger than that of conventional laser annealing in air (LA) samples. Moreover, WLA forms poly-Si films which show lower conductivity and larger carrier life time attributed to fewer electrical defects as compared to LA poly-Si films.

Original languageEnglish
Article number252106
JournalApplied Physics Letters
Volume101
Issue number25
DOIs
Publication statusPublished - Dec 17 2012

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

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