TY - JOUR
T1 - Crystallographic and electrical properties of epitaxial BaTiO3 film grown on conductive and insulating perovskite oxides
AU - Watanabe, Yukio
AU - Matsumoto, Yasuaki
AU - Kunitomo, Haruo
AU - Tanamura, Mitsuru
AU - Nishimoto, Erina
PY - 1994/9
Y1 - 1994/9
N2 - BaTiO3 films of various thicknesses were grown on doped and undoped SrTiO3(100) substrates and on (La, Sr)2 CuO4 films by a pulse laser deposition method. Both BaTiO3 and (La, Sr)2CuO4 films were smooth and free of particulates. X-ray diffractometry showed that all materials were three-dimensionally aligned with the cube-on-cube epitaxial relationship, and that the films obtained on SrTiO3(100) were of a c-axis-oriented tetragonal phase contrary to previous studies using metal bottom electrodes. As the film thickness decreased, the tetragonality of these films increased and the dielectric constant along the c-axis decreased rapidly, despite reduction of disorder at the interface by use of perovskite electrodes. The 2000-Å-thick BaTiO3 grown on (La, Sr)2CuO4 film had the remnant polarization of about 1.5 μC/cm2. The results were discussed using a surface layer model.
AB - BaTiO3 films of various thicknesses were grown on doped and undoped SrTiO3(100) substrates and on (La, Sr)2 CuO4 films by a pulse laser deposition method. Both BaTiO3 and (La, Sr)2CuO4 films were smooth and free of particulates. X-ray diffractometry showed that all materials were three-dimensionally aligned with the cube-on-cube epitaxial relationship, and that the films obtained on SrTiO3(100) were of a c-axis-oriented tetragonal phase contrary to previous studies using metal bottom electrodes. As the film thickness decreased, the tetragonality of these films increased and the dielectric constant along the c-axis decreased rapidly, despite reduction of disorder at the interface by use of perovskite electrodes. The 2000-Å-thick BaTiO3 grown on (La, Sr)2CuO4 film had the remnant polarization of about 1.5 μC/cm2. The results were discussed using a surface layer model.
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U2 - 10.1143/JJAP.33.5182
DO - 10.1143/JJAP.33.5182
M3 - Article
AN - SCOPUS:0028508272
SN - 0021-4922
VL - 33
SP - 5182
EP - 5186
JO - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes
JF - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes
IS - 9 S
ER -