CSTBT™ technology for high voltage applications with high dynamic robustness and low overall loss

Katsumi Nakamura, Ze Chen, Shin ichi Nishizawa, Akihiko Furukawa

Research output: Contribution to journalArticle

Abstract

This paper discusses the edge termination design of high-voltage insulated gate bipolar transistors with large current turn-off switching operation. We discovered that the phenomena of current crowding and impact ionization act as separated heat sources and induce one local hot spot that causes thermal destruction in the edge termination during the turn-off switching period. Optimizing the backside hole injection efficiency and relaxing the electric field of the surface pn junction edge at the edge termination region prevent the above problems. These concepts benefit the dynamic ruggedness under hard-switching conditions. This paper presents our novel edge termination design that achieves robust turn-off capability without deteriorating other performances of the device.

Original languageEnglish
Article number113635
JournalMicroelectronics Reliability
Volume110
DOIs
Publication statusPublished - Jul 2020

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics
  • Safety, Risk, Reliability and Quality
  • Condensed Matter Physics
  • Surfaces, Coatings and Films
  • Electrical and Electronic Engineering

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