CSTBT™ technology for high voltage applications with high dynamic robustness and low overall loss

Katsumi Nakamura; Ze Chen; Shin ichi Nishizawa; Akihiko Furukawa

doi:10.1016/j.microrel.2020.113635

CSTBT™ technology for high voltage applications with high dynamic robustness and low overall loss

Katsumi Nakamura, Ze Chen, Shin ichi Nishizawa, Akihiko Furukawa

Renewable Energy Center

Research output: Contribution to journal › Article

Abstract

This paper discusses the edge termination design of high-voltage insulated gate bipolar transistors with large current turn-off switching operation. We discovered that the phenomena of current crowding and impact ionization act as separated heat sources and induce one local hot spot that causes thermal destruction in the edge termination during the turn-off switching period. Optimizing the backside hole injection efficiency and relaxing the electric field of the surface pn junction edge at the edge termination region prevent the above problems. These concepts benefit the dynamic ruggedness under hard-switching conditions. This paper presents our novel edge termination design that achieves robust turn-off capability without deteriorating other performances of the device.

Original language	English
Article number	113635
Journal	Microelectronics Reliability
Volume	110
DOIs	https://doi.org/10.1016/j.microrel.2020.113635
Publication status	Published - Jul 2020

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Atomic and Molecular Physics, and Optics
Safety, Risk, Reliability and Quality
Condensed Matter Physics
Surfaces, Coatings and Films
Electrical and Electronic Engineering

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Nakamura, K., Chen, Z., Nishizawa, S. I., & Furukawa, A. (2020). CSTBT™ technology for high voltage applications with high dynamic robustness and low overall loss. Microelectronics Reliability, 110, [113635]. https://doi.org/10.1016/j.microrel.2020.113635

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abstract = "This paper discusses the edge termination design of high-voltage insulated gate bipolar transistors with large current turn-off switching operation. We discovered that the phenomena of current crowding and impact ionization act as separated heat sources and induce one local hot spot that causes thermal destruction in the edge termination during the turn-off switching period. Optimizing the backside hole injection efficiency and relaxing the electric field of the surface pn junction edge at the edge termination region prevent the above problems. These concepts benefit the dynamic ruggedness under hard-switching conditions. This paper presents our novel edge termination design that achieves robust turn-off capability without deteriorating other performances of the device.",

author = "Katsumi Nakamura and Ze Chen and Nishizawa, {Shin ichi} and Akihiko Furukawa",

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doi = "10.1016/j.microrel.2020.113635",

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AB - This paper discusses the edge termination design of high-voltage insulated gate bipolar transistors with large current turn-off switching operation. We discovered that the phenomena of current crowding and impact ionization act as separated heat sources and induce one local hot spot that causes thermal destruction in the edge termination during the turn-off switching period. Optimizing the backside hole injection efficiency and relaxing the electric field of the surface pn junction edge at the edge termination region prevent the above problems. These concepts benefit the dynamic ruggedness under hard-switching conditions. This paper presents our novel edge termination design that achieves robust turn-off capability without deteriorating other performances of the device.

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