C2H4O sensing properties for thick film sensor using La2O3-modified SnO2

Masahiro Kugishima, Kengo Shimanoe, Noboru Yamazoe

Research output: Contribution to journalArticle

38 Citations (Scopus)

Abstract

Doping SnO2 with Sb was investigated in relation with sensitization of a SnO2-based thick film sensor for C2H4O gas. With Sb doping by 0.05 or 0.1 at.%, the electrical resistances of films lowered drastically, suggesting an optimum Sb doping of about 0.1 at.%. A series of Sb (0.1 at.%)-doped devices with various La2O3 loadings up to 7 wt.% was subjected to measurements of the electrical resistances in air and the sensor response to C2H4O. The highest sensor response to C2H4O at 250 and 300 °C was attained at a loading of 5 wt.%, while the sensor response at 350 °C showed no great difference in between 1 and 7 wt.% loading. The optimal doping and loading amounts were discussed by the basis on the results of SEM observation.

Original languageEnglish
Pages (from-to)171-176
Number of pages6
JournalSensors and Actuators, B: Chemical
Volume118
Issue number1-2
DOIs
Publication statusPublished - Oct 25 2006

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Instrumentation
  • Condensed Matter Physics
  • Surfaces, Coatings and Films
  • Metals and Alloys
  • Electrical and Electronic Engineering
  • Materials Chemistry

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