C2H4O sensing properties for thick film sensor using La2O3-modified SnO2

Masahiro Kugishima, Kengo Shimanoe, Noboru Yamazoe

Research output: Contribution to journalArticle

37 Citations (Scopus)

Abstract

Doping SnO2 with Sb was investigated in relation with sensitization of a SnO2-based thick film sensor for C2H4O gas. With Sb doping by 0.05 or 0.1 at.%, the electrical resistances of films lowered drastically, suggesting an optimum Sb doping of about 0.1 at.%. A series of Sb (0.1 at.%)-doped devices with various La2O3 loadings up to 7 wt.% was subjected to measurements of the electrical resistances in air and the sensor response to C2H4O. The highest sensor response to C2H4O at 250 and 300 °C was attained at a loading of 5 wt.%, while the sensor response at 350 °C showed no great difference in between 1 and 7 wt.% loading. The optimal doping and loading amounts were discussed by the basis on the results of SEM observation.

Original languageEnglish
Pages (from-to)171-176
Number of pages6
JournalSensors and Actuators, B: Chemical
Volume118
Issue number1-2
DOIs
Publication statusPublished - Oct 25 2006

Fingerprint

Thick films
thick films
Doping (additives)
Acoustic impedance
sensors
Sensors
electrical resistance
Gases
Scanning electron microscopy
scanning electron microscopy
air
Air
gases

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Instrumentation
  • Condensed Matter Physics
  • Surfaces, Coatings and Films
  • Metals and Alloys
  • Electrical and Electronic Engineering
  • Materials Chemistry

Cite this

C2H4O sensing properties for thick film sensor using La2O3-modified SnO2. / Kugishima, Masahiro; Shimanoe, Kengo; Yamazoe, Noboru.

In: Sensors and Actuators, B: Chemical, Vol. 118, No. 1-2, 25.10.2006, p. 171-176.

Research output: Contribution to journalArticle

Kugishima, Masahiro ; Shimanoe, Kengo ; Yamazoe, Noboru. / C2H4O sensing properties for thick film sensor using La2O3-modified SnO2. In: Sensors and Actuators, B: Chemical. 2006 ; Vol. 118, No. 1-2. pp. 171-176.
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