Cubic boron nitride thin films prepared by ion-beam assisted pulsed Nd:YAG laser deposition

Yoshiaki Suda, Hiroharu Kawasaki, Kazuya Doi, Jun Namba, Takeshi Nakazono, Tamiko Ohshima

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

Cubic boron nitride (cBN) thin films are synthesized on Si(100) substrates by a pulsed Neodymium: Yttrium-Aluminum-Garnet (Nd:YAG) laser deposition method using an ion beam in order to enhance the synthesis of the cBN phase. The deposited films were characterized by a Fourier transform infrared (FT-IR) measurement method. When argon mixed nitrogen gas was used, there are clear three absorption peaks for hBN at 1370 cm-1 and 800 cm-1, and the absorption for cBN at 1050 cm-1. With increasing ion beam current and ion beam voltage, the peaks for hBN decrease. However, the peak for cBN does not decrease. These results suggest that nitrogen and argon ion bombardment plays an important role in the formation of cBN films.

Original languageEnglish
Title of host publication2000 International Conference on Ion Implantation Technology, IIT 2000 - Proceedings
Pages785-788
Number of pages4
DOIs
Publication statusPublished - 2000
Externally publishedYes
Event2000 13th International Conference on Ion Implantation Technology, IIT 2000 - Alpbach, Austria
Duration: Sep 17 2000Sep 22 2000

Publication series

NameProceedings of the International Conference on Ion Implantation Technology

Conference

Conference2000 13th International Conference on Ion Implantation Technology, IIT 2000
CountryAustria
CityAlpbach
Period9/17/009/22/00

All Science Journal Classification (ASJC) codes

  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

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