Cubic boron nitride thin films prepared by ion-beam assisted pulsed Nd:YAG laser deposition

Yoshiaki Suda; Hiroharu Kawasaki; Kazuya Doi; Jun Namba; Takeshi Nakazono; Tamiko Ohshima

doi:10.1109/.2000.924271

Cubic boron nitride thin films prepared by ion-beam assisted pulsed Nd:YAG laser deposition

Yoshiaki Suda, Hiroharu Kawasaki, Kazuya Doi, Jun Namba, Takeshi Nakazono, Tamiko Ohshima

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

2 Citations (Scopus)

Abstract

Cubic boron nitride (cBN) thin films are synthesized on Si(100) substrates by a pulsed Neodymium: Yttrium-Aluminum-Garnet (Nd:YAG) laser deposition method using an ion beam in order to enhance the synthesis of the cBN phase. The deposited films were characterized by a Fourier transform infrared (FT-IR) measurement method. When argon mixed nitrogen gas was used, there are clear three absorption peaks for hBN at 1370 cm^-1 and 800 cm^-1, and the absorption for cBN at 1050 cm^-1. With increasing ion beam current and ion beam voltage, the peaks for hBN decrease. However, the peak for cBN does not decrease. These results suggest that nitrogen and argon ion bombardment plays an important role in the formation of cBN films.

Original language	English
Title of host publication	2000 International Conference on Ion Implantation Technology, IIT 2000 - Proceedings
Pages	785-788
Number of pages	4
DOIs	https://doi.org/10.1109/.2000.924271
Publication status	Published - 2000
Externally published	Yes
Event	2000 13th International Conference on Ion Implantation Technology, IIT 2000 - Alpbach, Austria Duration: Sept 17 2000 → Sept 22 2000

Publication series

Name	Proceedings of the International Conference on Ion Implantation Technology

Conference

Conference	2000 13th International Conference on Ion Implantation Technology, IIT 2000
Country/Territory	Austria
City	Alpbach
Period	9/17/00 → 9/22/00

All Science Journal Classification (ASJC) codes

Electrical and Electronic Engineering
Electronic, Optical and Magnetic Materials
Condensed Matter Physics

Access to Document

10.1109/.2000.924271

Cite this

Suda, Y., Kawasaki, H., Doi, K., Namba, J., Nakazono, T., & Ohshima, T. (2000). Cubic boron nitride thin films prepared by ion-beam assisted pulsed Nd:YAG laser deposition. In 2000 International Conference on Ion Implantation Technology, IIT 2000 - Proceedings (pp. 785-788). [924271] (Proceedings of the International Conference on Ion Implantation Technology). https://doi.org/10.1109/.2000.924271

Cubic boron nitride thin films prepared by ion-beam assisted pulsed Nd:YAG laser deposition. / Suda, Yoshiaki; Kawasaki, Hiroharu; Doi, Kazuya et al.

2000 International Conference on Ion Implantation Technology, IIT 2000 - Proceedings. 2000. p. 785-788 924271 (Proceedings of the International Conference on Ion Implantation Technology).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Suda, Y, Kawasaki, H, Doi, K, Namba, J, Nakazono, T & Ohshima, T 2000, Cubic boron nitride thin films prepared by ion-beam assisted pulsed Nd:YAG laser deposition. in 2000 International Conference on Ion Implantation Technology, IIT 2000 - Proceedings., 924271, Proceedings of the International Conference on Ion Implantation Technology, pp. 785-788, 2000 13th International Conference on Ion Implantation Technology, IIT 2000, Alpbach, Austria, 9/17/00. https://doi.org/10.1109/.2000.924271

Suda Y, Kawasaki H, Doi K, Namba J, Nakazono T, Ohshima T. Cubic boron nitride thin films prepared by ion-beam assisted pulsed Nd:YAG laser deposition. In 2000 International Conference on Ion Implantation Technology, IIT 2000 - Proceedings. 2000. p. 785-788. 924271. (Proceedings of the International Conference on Ion Implantation Technology). doi: 10.1109/.2000.924271

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abstract = "Cubic boron nitride (cBN) thin films are synthesized on Si(100) substrates by a pulsed Neodymium: Yttrium-Aluminum-Garnet (Nd:YAG) laser deposition method using an ion beam in order to enhance the synthesis of the cBN phase. The deposited films were characterized by a Fourier transform infrared (FT-IR) measurement method. When argon mixed nitrogen gas was used, there are clear three absorption peaks for hBN at 1370 cm-1 and 800 cm-1, and the absorption for cBN at 1050 cm-1. With increasing ion beam current and ion beam voltage, the peaks for hBN decrease. However, the peak for cBN does not decrease. These results suggest that nitrogen and argon ion bombardment plays an important role in the formation of cBN films.",

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AU - Suda, Yoshiaki

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AU - Nakazono, Takeshi

AU - Ohshima, Tamiko

PY - 2000

Y1 - 2000

N2 - Cubic boron nitride (cBN) thin films are synthesized on Si(100) substrates by a pulsed Neodymium: Yttrium-Aluminum-Garnet (Nd:YAG) laser deposition method using an ion beam in order to enhance the synthesis of the cBN phase. The deposited films were characterized by a Fourier transform infrared (FT-IR) measurement method. When argon mixed nitrogen gas was used, there are clear three absorption peaks for hBN at 1370 cm-1 and 800 cm-1, and the absorption for cBN at 1050 cm-1. With increasing ion beam current and ion beam voltage, the peaks for hBN decrease. However, the peak for cBN does not decrease. These results suggest that nitrogen and argon ion bombardment plays an important role in the formation of cBN films.

AB - Cubic boron nitride (cBN) thin films are synthesized on Si(100) substrates by a pulsed Neodymium: Yttrium-Aluminum-Garnet (Nd:YAG) laser deposition method using an ion beam in order to enhance the synthesis of the cBN phase. The deposited films were characterized by a Fourier transform infrared (FT-IR) measurement method. When argon mixed nitrogen gas was used, there are clear three absorption peaks for hBN at 1370 cm-1 and 800 cm-1, and the absorption for cBN at 1050 cm-1. With increasing ion beam current and ion beam voltage, the peaks for hBN decrease. However, the peak for cBN does not decrease. These results suggest that nitrogen and argon ion bombardment plays an important role in the formation of cBN films.

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Cubic boron nitride thin films prepared by ion-beam assisted pulsed Nd:YAG laser deposition

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