Current-driven insulator-conductor transition and nonvolatile memory in chromium-doped SrTiO 3 single crystals

Yukio Watanabe, J. G. Bednorz, A. Bietsch, Ch Gerber, D. Widmer, A. Beck, S. J. Wind

Research output: Contribution to journalArticle

468 Citations (Scopus)

Abstract

Materials showing reversible resistive switching are attractive for today's semiconductor technology with its wide interest in nonvolatile random-access memories. In doped SrTiO 3 single crystals, we found a dc-current-induced reversible insulator-conductor transition with resistance changes of up to five orders of magnitude. This conducting state allows extremely reproducible switching between different impedance states by current pulses with a performance required for nonvolatile memories. The results indicate a type of charge-induced bulk electronic change as a prerequisite for the memory effect, scaling down to nanometer-range electrode sizes in thin films.

Original languageEnglish
Pages (from-to)3738-3740
Number of pages3
JournalApplied Physics Letters
Volume78
Issue number23
DOIs
Publication statusPublished - Jun 4 2001
Externally publishedYes

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All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

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