Current-source a-Si: H thin-film transistor circuit for active-matrix organic light-emitting displays

Yi He; Reiji Hattori; Jerzy Kanicki

doi:10.1109/55.887475

Current-source a-Si: H thin-film transistor circuit for active-matrix organic light-emitting displays

Yi He, Reiji Hattori, Jerzy Kanicki

Advanced Project Division

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91 Citations (Scopus)

Abstract

In this letter, we describe a four thin-film-transistor (TFT) circuit based on hydrogenated amorphous silicon (a-Si:H) technology. This circuit can provide a constant output current level and can be automatically adjusted for TFT threshold voltage variations. The experimental results indicated that, for TFT threshold voltage shift as large as approximately 3 V, the output current variations can be less than 1 and 5% for high (≥0.5 μA) and low (≤0.1 μA) current levels, respectively. This circuit can potentially be used for the active-matrix organic light-emitting displays (AM-OLEDs).

Original language	English
Pages (from-to)	590-592
Number of pages	3
Journal	IEEE Electron Device Letters
Volume	21
Issue number	12
DOIs	https://doi.org/10.1109/55.887475
Publication status	Published - Dec 1 2000

All Science Journal Classification (ASJC) codes

Electrical and Electronic Engineering

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10.1109/55.887475

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abstract = "In this letter, we describe a four thin-film-transistor (TFT) circuit based on hydrogenated amorphous silicon (a-Si:H) technology. This circuit can provide a constant output current level and can be automatically adjusted for TFT threshold voltage variations. The experimental results indicated that, for TFT threshold voltage shift as large as approximately 3 V, the output current variations can be less than 1 and 5% for high (≥0.5 μA) and low (≤0.1 μA) current levels, respectively. This circuit can potentially be used for the active-matrix organic light-emitting displays (AM-OLEDs).",

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Y1 - 2000/12/1

N2 - In this letter, we describe a four thin-film-transistor (TFT) circuit based on hydrogenated amorphous silicon (a-Si:H) technology. This circuit can provide a constant output current level and can be automatically adjusted for TFT threshold voltage variations. The experimental results indicated that, for TFT threshold voltage shift as large as approximately 3 V, the output current variations can be less than 1 and 5% for high (≥0.5 μA) and low (≤0.1 μA) current levels, respectively. This circuit can potentially be used for the active-matrix organic light-emitting displays (AM-OLEDs).

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Current-source a-Si: H thin-film transistor circuit for active-matrix organic light-emitting displays

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