In this letter, we describe a four thin-film-transistor (TFT) circuit based on hydrogenated amorphous silicon (a-Si:H) technology. This circuit can provide a constant output current level and can be automatically adjusted for TFT threshold voltage variations. The experimental results indicated that, for TFT threshold voltage shift as large as approximately 3 V, the output current variations can be less than 1 and 5% for high (≥0.5 μA) and low (≤0.1 μA) current levels, respectively. This circuit can potentially be used for the active-matrix organic light-emitting displays (AM-OLEDs).
All Science Journal Classification (ASJC) codes
- Electrical and Electronic Engineering