Current-source a-Si: H thin-film transistor circuit for active-matrix organic light-emitting displays

Yi He; Reiji Hattori; Jerzy Kanicki

doi:10.1109/55.887475

Current-source a-Si: H thin-film transistor circuit for active-matrix organic light-emitting displays

Yi He, Reiji Hattori, Jerzy Kanicki

Advanced Project Division

Research output: Contribution to journal › Article › peer-review

87 Citations (Scopus)

Abstract

In this letter, we describe a four thin-film-transistor (TFT) circuit based on hydrogenated amorphous silicon (a-Si:H) technology. This circuit can provide a constant output current level and can be automatically adjusted for TFT threshold voltage variations. The experimental results indicated that, for TFT threshold voltage shift as large as approximately 3 V, the output current variations can be less than 1 and 5% for high (≥0.5 μA) and low (≤0.1 μA) current levels, respectively. This circuit can potentially be used for the active-matrix organic light-emitting displays (AM-OLEDs).

Original language	English
Pages (from-to)	590-592
Number of pages	3
Journal	IEEE Electron Device Letters
Volume	21
Issue number	12
DOIs	https://doi.org/10.1109/55.887475
Publication status	Published - Dec 1 2000

All Science Journal Classification (ASJC) codes

Electrical and Electronic Engineering

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10.1109/55.887475

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@article{a839915fa59c4b9c94b2a15ca9e46a17,

title = "Current-source a-Si: H thin-film transistor circuit for active-matrix organic light-emitting displays",

abstract = "In this letter, we describe a four thin-film-transistor (TFT) circuit based on hydrogenated amorphous silicon (a-Si:H) technology. This circuit can provide a constant output current level and can be automatically adjusted for TFT threshold voltage variations. The experimental results indicated that, for TFT threshold voltage shift as large as approximately 3 V, the output current variations can be less than 1 and 5% for high (≥0.5 μA) and low (≤0.1 μA) current levels, respectively. This circuit can potentially be used for the active-matrix organic light-emitting displays (AM-OLEDs).",

author = "Yi He and Reiji Hattori and Jerzy Kanicki",

year = "2000",

month = dec,

day = "1",

doi = "10.1109/55.887475",

language = "English",

volume = "21",

pages = "590--592",

journal = "IEEE Electron Device Letters",

issn = "0741-3106",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

number = "12",

}

TY - JOUR

T1 - Current-source a-Si

T2 - H thin-film transistor circuit for active-matrix organic light-emitting displays

AU - He, Yi

AU - Hattori, Reiji

AU - Kanicki, Jerzy

PY - 2000/12/1

Y1 - 2000/12/1

N2 - In this letter, we describe a four thin-film-transistor (TFT) circuit based on hydrogenated amorphous silicon (a-Si:H) technology. This circuit can provide a constant output current level and can be automatically adjusted for TFT threshold voltage variations. The experimental results indicated that, for TFT threshold voltage shift as large as approximately 3 V, the output current variations can be less than 1 and 5% for high (≥0.5 μA) and low (≤0.1 μA) current levels, respectively. This circuit can potentially be used for the active-matrix organic light-emitting displays (AM-OLEDs).

AB - In this letter, we describe a four thin-film-transistor (TFT) circuit based on hydrogenated amorphous silicon (a-Si:H) technology. This circuit can provide a constant output current level and can be automatically adjusted for TFT threshold voltage variations. The experimental results indicated that, for TFT threshold voltage shift as large as approximately 3 V, the output current variations can be less than 1 and 5% for high (≥0.5 μA) and low (≤0.1 μA) current levels, respectively. This circuit can potentially be used for the active-matrix organic light-emitting displays (AM-OLEDs).

UR - http://www.scopus.com/inward/record.url?scp=0034498528&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0034498528&partnerID=8YFLogxK

U2 - 10.1109/55.887475

DO - 10.1109/55.887475

M3 - Article

AN - SCOPUS:0034498528

VL - 21

SP - 590

EP - 592

JO - IEEE Electron Device Letters

JF - IEEE Electron Device Letters

SN - 0741-3106

IS - 12

ER -