Current transport mechanism of n-type nanocrystalline FeSi2/intrinsic si/p-type si heterojunctions fabricated by facing-targets direct-current sputtering

Nathaporn Promros, Suguru Funasaki, Ryuhei Iwasaki, Tsuyoshi Yoshitake

    Research output: Chapter in Book/Report/Conference proceedingConference contribution

    Abstract

    N-Type nanocrystalline FeSi2/intrinsic Si/p-type Si heterojunctions were successfully fabricated by FTDCS and their forward current-voltage characteristics at low temperatures were analyzed on the basis of thermionic emission theory. The analysis of J-V characteristics exhibits an increase in the ideality factor and a decrease in the barrier height at low temperatures. The values of ideality factor were estimated to be 2.26 at 300 K and 9.29 at 77 K. The temperature dependent ideality factor together with the constant value of parameter A indicated that a trap assisted multistep tunneling process is the dominant carrier transport mechanism in this heterojunction. At high voltages, the current transport mechanism is dominated by SCLC process.

    Original languageEnglish
    Title of host publicationAdvances in Material Science and Technology
    Pages199-203
    Number of pages5
    DOIs
    Publication statusPublished - 2013
    EventInternational Conference on Engineering, Applied Sciences, and Technology, ICEAST 2013 - Bangkok, Thailand
    Duration: Aug 21 2013Aug 24 2013

    Publication series

    NameAdvanced Materials Research
    Volume802
    ISSN (Print)1022-6680

    Other

    OtherInternational Conference on Engineering, Applied Sciences, and Technology, ICEAST 2013
    CountryThailand
    CityBangkok
    Period8/21/138/24/13

    All Science Journal Classification (ASJC) codes

    • Engineering(all)

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