Current transport mechanisms in n-type ultrananocrystalline diamond/p-type Si heterojunctions

Abdelrahman Zkria, Mahmoud Shaban, Takanori Hanada, Nathaporn Promros, Tsuyoshi Yoshitake

    Research output: Contribution to journalArticle

    3 Citations (Scopus)

    Abstract

    Nitrogen-doped ultrananocrystalline diamond/hydrogenated amorphous carbon composite (UNCD/a-C:H) films were deposited on p-type Si substrates by coaxial arc plasma deposition. The deposited films possessed n-type conduction, and evidently formed pn heterojunctions with p-type Si substrates. The heterojunction devices showed typical rectification properties similar to those observed for conventional abrupt pn heterojunctions. The conduction mechanisms that govern current transport in these devices were analyzed using dark current-voltage measurements in the temperature range from 300 K to 80 K. The results revealed that a trap-assisted multi-step tunneling process is a dominant mechanism at lower temperatures and low forward bias. At least two defect levels with activation energies of 42 and 24 meV appear to activate this process. At moderate forward bias, the current followed a power-law dependence, attributable to a space-charge-limited current. This junction behavior might be owing to a large number of grain boundaries in the UNCD/a-C:H film that provide active centers for carrier recombination-tunneling processes at the junction interface.

    Original languageEnglish
    Pages (from-to)12749-12753
    Number of pages5
    JournalJournal of nanoscience and nanotechnology
    Volume16
    Issue number12
    DOIs
    Publication statusPublished - Dec 1 2016

    Fingerprint

    Diamond
    Heterojunctions
    heterojunctions
    Diamonds
    diamonds
    Equipment and Supplies
    Temperature
    Genetic Recombination
    heterojunction devices
    conduction
    Plasma deposition
    Nitrogen
    Carbon
    Dark currents
    Voltage measurement
    Amorphous carbon
    Electric current measurement
    rectification
    Substrates
    dark current

    All Science Journal Classification (ASJC) codes

    • Bioengineering
    • Chemistry(all)
    • Biomedical Engineering
    • Materials Science(all)
    • Condensed Matter Physics

    Cite this

    Current transport mechanisms in n-type ultrananocrystalline diamond/p-type Si heterojunctions. / Zkria, Abdelrahman; Shaban, Mahmoud; Hanada, Takanori; Promros, Nathaporn; Yoshitake, Tsuyoshi.

    In: Journal of nanoscience and nanotechnology, Vol. 16, No. 12, 01.12.2016, p. 12749-12753.

    Research output: Contribution to journalArticle

    Zkria, Abdelrahman ; Shaban, Mahmoud ; Hanada, Takanori ; Promros, Nathaporn ; Yoshitake, Tsuyoshi. / Current transport mechanisms in n-type ultrananocrystalline diamond/p-type Si heterojunctions. In: Journal of nanoscience and nanotechnology. 2016 ; Vol. 16, No. 12. pp. 12749-12753.
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    abstract = "Nitrogen-doped ultrananocrystalline diamond/hydrogenated amorphous carbon composite (UNCD/a-C:H) films were deposited on p-type Si substrates by coaxial arc plasma deposition. The deposited films possessed n-type conduction, and evidently formed pn heterojunctions with p-type Si substrates. The heterojunction devices showed typical rectification properties similar to those observed for conventional abrupt pn heterojunctions. The conduction mechanisms that govern current transport in these devices were analyzed using dark current-voltage measurements in the temperature range from 300 K to 80 K. The results revealed that a trap-assisted multi-step tunneling process is a dominant mechanism at lower temperatures and low forward bias. At least two defect levels with activation energies of 42 and 24 meV appear to activate this process. At moderate forward bias, the current followed a power-law dependence, attributable to a space-charge-limited current. This junction behavior might be owing to a large number of grain boundaries in the UNCD/a-C:H film that provide active centers for carrier recombination-tunneling processes at the junction interface.",
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    AU - Zkria, Abdelrahman

    AU - Shaban, Mahmoud

    AU - Hanada, Takanori

    AU - Promros, Nathaporn

    AU - Yoshitake, Tsuyoshi

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