Abstract
Nitrogen-doped ultrananocrystalline diamond/hydrogenated amorphous carbon composite (UNCD/a-C:H) films were deposited on p-type Si substrates by coaxial arc plasma deposition. The deposited films possessed n-type conduction, and evidently formed pn heterojunctions with p-type Si substrates. The heterojunction devices showed typical rectification properties similar to those observed for conventional abrupt pn heterojunctions. The conduction mechanisms that govern current transport in these devices were analyzed using dark current-voltage measurements in the temperature range from 300 K to 80 K. The results revealed that a trap-assisted multi-step tunneling process is a dominant mechanism at lower temperatures and low forward bias. At least two defect levels with activation energies of 42 and 24 meV appear to activate this process. At moderate forward bias, the current followed a power-law dependence, attributable to a space-charge-limited current. This junction behavior might be owing to a large number of grain boundaries in the UNCD/a-C:H film that provide active centers for carrier recombination-tunneling processes at the junction interface.
| Original language | English |
|---|---|
| Pages (from-to) | 12749-12753 |
| Number of pages | 5 |
| Journal | Journal of nanoscience and nanotechnology |
| Volume | 16 |
| Issue number | 12 |
| DOIs | |
| Publication status | Published - Dec 1 2016 |
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All Science Journal Classification (ASJC) codes
- Bioengineering
- Chemistry(all)
- Biomedical Engineering
- Materials Science(all)
- Condensed Matter Physics
Cite this
Current transport mechanisms in n-type ultrananocrystalline diamond/p-type Si heterojunctions. / Zkria, Abdelrahman; Shaban, Mahmoud; Hanada, Takanori; Promros, Nathaporn; Yoshitake, Tsuyoshi.
In: Journal of nanoscience and nanotechnology, Vol. 16, No. 12, 01.12.2016, p. 12749-12753.Research output: Contribution to journal › Article
}
TY - JOUR
T1 - Current transport mechanisms in n-type ultrananocrystalline diamond/p-type Si heterojunctions
AU - Zkria, Abdelrahman
AU - Shaban, Mahmoud
AU - Hanada, Takanori
AU - Promros, Nathaporn
AU - Yoshitake, Tsuyoshi
PY - 2016/12/1
Y1 - 2016/12/1
N2 - Nitrogen-doped ultrananocrystalline diamond/hydrogenated amorphous carbon composite (UNCD/a-C:H) films were deposited on p-type Si substrates by coaxial arc plasma deposition. The deposited films possessed n-type conduction, and evidently formed pn heterojunctions with p-type Si substrates. The heterojunction devices showed typical rectification properties similar to those observed for conventional abrupt pn heterojunctions. The conduction mechanisms that govern current transport in these devices were analyzed using dark current-voltage measurements in the temperature range from 300 K to 80 K. The results revealed that a trap-assisted multi-step tunneling process is a dominant mechanism at lower temperatures and low forward bias. At least two defect levels with activation energies of 42 and 24 meV appear to activate this process. At moderate forward bias, the current followed a power-law dependence, attributable to a space-charge-limited current. This junction behavior might be owing to a large number of grain boundaries in the UNCD/a-C:H film that provide active centers for carrier recombination-tunneling processes at the junction interface.
AB - Nitrogen-doped ultrananocrystalline diamond/hydrogenated amorphous carbon composite (UNCD/a-C:H) films were deposited on p-type Si substrates by coaxial arc plasma deposition. The deposited films possessed n-type conduction, and evidently formed pn heterojunctions with p-type Si substrates. The heterojunction devices showed typical rectification properties similar to those observed for conventional abrupt pn heterojunctions. The conduction mechanisms that govern current transport in these devices were analyzed using dark current-voltage measurements in the temperature range from 300 K to 80 K. The results revealed that a trap-assisted multi-step tunneling process is a dominant mechanism at lower temperatures and low forward bias. At least two defect levels with activation energies of 42 and 24 meV appear to activate this process. At moderate forward bias, the current followed a power-law dependence, attributable to a space-charge-limited current. This junction behavior might be owing to a large number of grain boundaries in the UNCD/a-C:H film that provide active centers for carrier recombination-tunneling processes at the junction interface.
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UR - http://www.scopus.com/inward/citedby.url?scp=84994222189&partnerID=8YFLogxK
U2 - 10.1166/jnn.2016.13663
DO - 10.1166/jnn.2016.13663
M3 - Article
AN - SCOPUS:84994222189
VL - 16
SP - 12749
EP - 12753
JO - Journal of Nanoscience and Nanotechnology
JF - Journal of Nanoscience and Nanotechnology
SN - 1533-4880
IS - 12
ER -