The current-voltage (I-V) characteristics of single- and poly-crystal alumina and aluminum nitride (A1N) were measured at temperatures ranging from room temperature to 723 K with or without 1 MeV electron irradiation in a high voltage electron microscope (HVEM). Both alumina and A1N specimens exhibit non-ohmic I-V characteristics without irradiation. The I-V characteristics in alumina, however, change from non-ohmic to almost ohmic under electron irradiation. But the I-V characteristics in A1N is still non-ohmic under irradiation. There are remarkable differences in I-V characteristics between the alumina and A1N specimens. The non-ohmic behavior is due to the electronic barrier formed near the interface between the titanium electrode and the alumina or A1N specimen. No bulk and surface radiation induced electrical degradation (RIED) was found in A1N up to 1.5 × 10-5 dpa.
All Science Journal Classification (ASJC) codes
- Nuclear and High Energy Physics
- Materials Science(all)
- Nuclear Energy and Engineering