TY - JOUR
T1 - Cu–S-based thermoelectric compounds with a sphalerite-derived disordered crystal structure
AU - Hirayama, Shota
AU - Suekuni, Koichiro
AU - Sauerschnig, Philipp
AU - Ohta, Michihiro
AU - Ohtaki, Michitaka
N1 - Funding Information:
This work was financially supported by the Japan Society for the Promotion of Science (JSPS) KAKENHI Grant No. JP20H02440 (KS) and grant from Research and Development Program for Promoting Innovative Clean Energy Technologies Through International Collaboration funded by the New Energy and Industrial Technology Development Organization (NEDO) Grant No. JPNP20005 . The authors would like to thank Enago ( www.enago.jp ) for the English language review.
Publisher Copyright:
© 2022 Elsevier Inc.
PY - 2022/5
Y1 - 2022/5
N2 - Low lattice thermal conductivity is observed in compounds having disordered atomic configurations in their crystal structures. At temperatures above 300 K, a Cu–S-based semiconducting compound, Cu3.1Nb0.25Sn0.9S4, with a sphalerite-derived disordered structure, exhibits thermal conductivity less than 1 W K−1 m−1. In this study, we synthesized and tested the thermoelectric properties of the hole-doped derivatives, Cu3.1Nb0.25−xTixSn0.9S4 (x = 0, 0.125, 0.25) and Cu3.1Ti0.1875Sn0.9S4, up to 673 K. The hole-carrier doping decreased the electrical resistivity, improving the power factor. Cu3.1Ti0.25Sn0.9S4 shows a dimensionless figure of merit ZT of 0.1/0.6 at 300/673 K due to its inherent low lattice thermal conductivity and improved power factor. The thermoelectric properties of the Cu3.1Nb0.25Sn0.9S4-based compounds were compared with those of Cu3SbS4-based compounds with an ordered arrangement of Cu atoms in a similar sphalerite-derived structure, showing that the disordered atomic arrangement is responsible for the enhanced scatterings of both phonons and electrons.
AB - Low lattice thermal conductivity is observed in compounds having disordered atomic configurations in their crystal structures. At temperatures above 300 K, a Cu–S-based semiconducting compound, Cu3.1Nb0.25Sn0.9S4, with a sphalerite-derived disordered structure, exhibits thermal conductivity less than 1 W K−1 m−1. In this study, we synthesized and tested the thermoelectric properties of the hole-doped derivatives, Cu3.1Nb0.25−xTixSn0.9S4 (x = 0, 0.125, 0.25) and Cu3.1Ti0.1875Sn0.9S4, up to 673 K. The hole-carrier doping decreased the electrical resistivity, improving the power factor. Cu3.1Ti0.25Sn0.9S4 shows a dimensionless figure of merit ZT of 0.1/0.6 at 300/673 K due to its inherent low lattice thermal conductivity and improved power factor. The thermoelectric properties of the Cu3.1Nb0.25Sn0.9S4-based compounds were compared with those of Cu3SbS4-based compounds with an ordered arrangement of Cu atoms in a similar sphalerite-derived structure, showing that the disordered atomic arrangement is responsible for the enhanced scatterings of both phonons and electrons.
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U2 - 10.1016/j.jssc.2022.122960
DO - 10.1016/j.jssc.2022.122960
M3 - Article
AN - SCOPUS:85124272517
SN - 0022-4596
VL - 309
JO - Journal of Solid State Chemistry
JF - Journal of Solid State Chemistry
M1 - 122960
ER -