Deep impurity levels and diffusion coefficient of manganese in silicon

Hiroshi Nakashima, K. Hashimoto

    Research output: Contribution to journalArticle

    24 Citations (Scopus)

    Abstract

    Manganese-related deep levels in n- and p-type silicon have been investigated by deep level transient spectroscopy and Hall effect. Two electron traps of Ec-(0.12±0.01) eV and Ec-(0.41±0. 01) eV, and a hole trap of Ev+(0.32±0.01) eV are found in manganese-doped silicon. The energy levels of these traps correspond to the transitions between four charge states (Mn-, Mn0, Mn +, Mn++) of interstitial manganese. An additional donor-type electron trap of Ec-(0.51±0.02) eV is observed in the n-type samples, and the trap can be tentatively assigned to substitutional manganese. Furthermore, an electron trap of Ec-(0.50±0.02) eV is observed for n+p junction samples diffused with manganese in boron-doped p-type silicon. The trap is attributed to the manganese-boron complex, which is formed owing to the pairing reaction of interstitial manganese and substitutional boron. From the investigation of the pairing reaction, the diffusion coefficient DMn of interstitial manganese is determined in the temperature range 14-90°C. It can be represented by the expression DMn=2.4×10-3 exp(-0.72/kT)cm2 s -1.

    Original languageEnglish
    Pages (from-to)1440-1445
    Number of pages6
    JournalJournal of Applied Physics
    Volume69
    Issue number3
    DOIs
    Publication statusPublished - Dec 1 1991

    Fingerprint

    manganese
    diffusion coefficient
    traps
    impurities
    silicon
    coefficients
    interstitials
    boron
    electrons
    p-n junctions
    Hall effect
    energy levels
    spectroscopy

    All Science Journal Classification (ASJC) codes

    • Physics and Astronomy (miscellaneous)

    Cite this

    Deep impurity levels and diffusion coefficient of manganese in silicon. / Nakashima, Hiroshi; Hashimoto, K.

    In: Journal of Applied Physics, Vol. 69, No. 3, 01.12.1991, p. 1440-1445.

    Research output: Contribution to journalArticle

    @article{bdffeff65025416dbdd364ae75d36ea2,
    title = "Deep impurity levels and diffusion coefficient of manganese in silicon",
    abstract = "Manganese-related deep levels in n- and p-type silicon have been investigated by deep level transient spectroscopy and Hall effect. Two electron traps of Ec-(0.12±0.01) eV and Ec-(0.41±0. 01) eV, and a hole trap of Ev+(0.32±0.01) eV are found in manganese-doped silicon. The energy levels of these traps correspond to the transitions between four charge states (Mn-, Mn0, Mn +, Mn++) of interstitial manganese. An additional donor-type electron trap of Ec-(0.51±0.02) eV is observed in the n-type samples, and the trap can be tentatively assigned to substitutional manganese. Furthermore, an electron trap of Ec-(0.50±0.02) eV is observed for n+p junction samples diffused with manganese in boron-doped p-type silicon. The trap is attributed to the manganese-boron complex, which is formed owing to the pairing reaction of interstitial manganese and substitutional boron. From the investigation of the pairing reaction, the diffusion coefficient DMn of interstitial manganese is determined in the temperature range 14-90°C. It can be represented by the expression DMn=2.4×10-3 exp(-0.72/kT)cm2 s -1.",
    author = "Hiroshi Nakashima and K. Hashimoto",
    year = "1991",
    month = "12",
    day = "1",
    doi = "10.1063/1.347285",
    language = "English",
    volume = "69",
    pages = "1440--1445",
    journal = "Journal of Applied Physics",
    issn = "0021-8979",
    publisher = "American Institute of Physics Publising LLC",
    number = "3",

    }

    TY - JOUR

    T1 - Deep impurity levels and diffusion coefficient of manganese in silicon

    AU - Nakashima, Hiroshi

    AU - Hashimoto, K.

    PY - 1991/12/1

    Y1 - 1991/12/1

    N2 - Manganese-related deep levels in n- and p-type silicon have been investigated by deep level transient spectroscopy and Hall effect. Two electron traps of Ec-(0.12±0.01) eV and Ec-(0.41±0. 01) eV, and a hole trap of Ev+(0.32±0.01) eV are found in manganese-doped silicon. The energy levels of these traps correspond to the transitions between four charge states (Mn-, Mn0, Mn +, Mn++) of interstitial manganese. An additional donor-type electron trap of Ec-(0.51±0.02) eV is observed in the n-type samples, and the trap can be tentatively assigned to substitutional manganese. Furthermore, an electron trap of Ec-(0.50±0.02) eV is observed for n+p junction samples diffused with manganese in boron-doped p-type silicon. The trap is attributed to the manganese-boron complex, which is formed owing to the pairing reaction of interstitial manganese and substitutional boron. From the investigation of the pairing reaction, the diffusion coefficient DMn of interstitial manganese is determined in the temperature range 14-90°C. It can be represented by the expression DMn=2.4×10-3 exp(-0.72/kT)cm2 s -1.

    AB - Manganese-related deep levels in n- and p-type silicon have been investigated by deep level transient spectroscopy and Hall effect. Two electron traps of Ec-(0.12±0.01) eV and Ec-(0.41±0. 01) eV, and a hole trap of Ev+(0.32±0.01) eV are found in manganese-doped silicon. The energy levels of these traps correspond to the transitions between four charge states (Mn-, Mn0, Mn +, Mn++) of interstitial manganese. An additional donor-type electron trap of Ec-(0.51±0.02) eV is observed in the n-type samples, and the trap can be tentatively assigned to substitutional manganese. Furthermore, an electron trap of Ec-(0.50±0.02) eV is observed for n+p junction samples diffused with manganese in boron-doped p-type silicon. The trap is attributed to the manganese-boron complex, which is formed owing to the pairing reaction of interstitial manganese and substitutional boron. From the investigation of the pairing reaction, the diffusion coefficient DMn of interstitial manganese is determined in the temperature range 14-90°C. It can be represented by the expression DMn=2.4×10-3 exp(-0.72/kT)cm2 s -1.

    UR - http://www.scopus.com/inward/record.url?scp=0342381543&partnerID=8YFLogxK

    UR - http://www.scopus.com/inward/citedby.url?scp=0342381543&partnerID=8YFLogxK

    U2 - 10.1063/1.347285

    DO - 10.1063/1.347285

    M3 - Article

    AN - SCOPUS:0342381543

    VL - 69

    SP - 1440

    EP - 1445

    JO - Journal of Applied Physics

    JF - Journal of Applied Physics

    SN - 0021-8979

    IS - 3

    ER -