TY - JOUR
T1 - Deep impurity levels of cobalt in silicon
AU - Nakashima, Hiroshi
AU - Tsumori, Yasuo
AU - Miyagawa, Tsuyoshi
AU - Hashimoto, Kimio
PY - 1990/8
Y1 - 1990/8
N2 - It has been believed until now that cobalt in silicon forms an acceptor level at around Ec–0.53 eV and a donor level at around Ev+0.35 eV. However, it is found that an acceptor level at Ec–(0.40±0.02)eV and a donor level at Ev+(0.23±0.01) eV are attributed to the amphoteric cobalt levels from the DLTS measurements for the samples diffused with cobalt deposited from the evaporation of a pure cobalt wire. The former levels (0.53 eV and 0.35 eV) are observed only for the samples prepared by the cobalt deposition from a tungsten filament wrapped with cobalt wire, and the tungsten contamination is regarded to be the cause of these levels.
AB - It has been believed until now that cobalt in silicon forms an acceptor level at around Ec–0.53 eV and a donor level at around Ev+0.35 eV. However, it is found that an acceptor level at Ec–(0.40±0.02)eV and a donor level at Ev+(0.23±0.01) eV are attributed to the amphoteric cobalt levels from the DLTS measurements for the samples diffused with cobalt deposited from the evaporation of a pure cobalt wire. The former levels (0.53 eV and 0.35 eV) are observed only for the samples prepared by the cobalt deposition from a tungsten filament wrapped with cobalt wire, and the tungsten contamination is regarded to be the cause of these levels.
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U2 - 10.1143/JJAP.29.1395
DO - 10.1143/JJAP.29.1395
M3 - Article
AN - SCOPUS:5844426562
VL - 29
SP - 1395
EP - 1398
JO - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes
JF - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes
SN - 0021-4922
IS - 8 R
ER -