Deep impurity levels of cobalt in silicon

Hiroshi Nakashima, Yasuo Tsumori, Tsuyoshi Miyagawa, Kimio Hashimoto

    Research output: Contribution to journalArticle

    11 Citations (Scopus)

    Abstract

    It has been believed until now that cobalt in silicon forms an acceptor level at around Ec–0.53 eV and a donor level at around Ev+0.35 eV. However, it is found that an acceptor level at Ec–(0.40±0.02)eV and a donor level at Ev+(0.23±0.01) eV are attributed to the amphoteric cobalt levels from the DLTS measurements for the samples diffused with cobalt deposited from the evaporation of a pure cobalt wire. The former levels (0.53 eV and 0.35 eV) are observed only for the samples prepared by the cobalt deposition from a tungsten filament wrapped with cobalt wire, and the tungsten contamination is regarded to be the cause of these levels.

    Original languageEnglish
    Pages (from-to)1395-1398
    Number of pages4
    JournalJapanese Journal of Applied Physics
    Volume29
    Issue number8 R
    DOIs
    Publication statusPublished - 1990

    Fingerprint

    Cobalt
    cobalt
    Impurities
    Silicon
    impurities
    silicon
    Tungsten
    Wire
    tungsten
    wire
    Deep level transient spectroscopy
    Evaporation
    Contamination
    filaments
    contamination
    evaporation
    causes

    All Science Journal Classification (ASJC) codes

    • Engineering(all)
    • Physics and Astronomy(all)

    Cite this

    Deep impurity levels of cobalt in silicon. / Nakashima, Hiroshi; Tsumori, Yasuo; Miyagawa, Tsuyoshi; Hashimoto, Kimio.

    In: Japanese Journal of Applied Physics, Vol. 29, No. 8 R, 1990, p. 1395-1398.

    Research output: Contribution to journalArticle

    Nakashima, H, Tsumori, Y, Miyagawa, T & Hashimoto, K 1990, 'Deep impurity levels of cobalt in silicon', Japanese Journal of Applied Physics, vol. 29, no. 8 R, pp. 1395-1398. https://doi.org/10.1143/JJAP.29.1395
    Nakashima, Hiroshi ; Tsumori, Yasuo ; Miyagawa, Tsuyoshi ; Hashimoto, Kimio. / Deep impurity levels of cobalt in silicon. In: Japanese Journal of Applied Physics. 1990 ; Vol. 29, No. 8 R. pp. 1395-1398.
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