Deep impurity levels of cobalt in silicon

Hiroshi Nakashima, Yasuo Tsumori, Tsuyoshi Miyagawa, Kimio Hashimoto

    Research output: Contribution to journalArticlepeer-review

    11 Citations (Scopus)

    Abstract

    It has been believed until now that cobalt in silicon forms an acceptor level at around Ec–0.53 eV and a donor level at around Ev+0.35 eV. However, it is found that an acceptor level at Ec–(0.40±0.02)eV and a donor level at Ev+(0.23±0.01) eV are attributed to the amphoteric cobalt levels from the DLTS measurements for the samples diffused with cobalt deposited from the evaporation of a pure cobalt wire. The former levels (0.53 eV and 0.35 eV) are observed only for the samples prepared by the cobalt deposition from a tungsten filament wrapped with cobalt wire, and the tungsten contamination is regarded to be the cause of these levels.

    Original languageEnglish
    Pages (from-to)1395-1398
    Number of pages4
    JournalJapanese Journal of Applied Physics
    Volume29
    Issue number8 R
    DOIs
    Publication statusPublished - Aug 1990

    All Science Journal Classification (ASJC) codes

    • Engineering(all)
    • Physics and Astronomy(all)

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