Deep level of iron-hydrogen complex in silicon

Taizoh Sadoh, K. Tsukamoto, A. Baba, D. Bai, A. Kenjo, T. Tsurushima, H. Mori, Hiroshi Nakashima

Research output: Contribution to journalArticle

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Abstract

Deep levels related to iron in n-type silicon have been investigated using thermally stimulated capacitance (TSCAP) combined with minority carrier injection. The TSCAP measurement reveals two traps of E V + 0.31 and E V +0.41 eV. The trap of E V +0.41 eV is a donor due to interstitial iron. The trap of E V +0.31 eV, due to a complex of interstitial iron and hydrogen, is observed in the sample etched chemically with an acid mixture containing HF and HNO 3 and annihilates after annealing at 175°C for 30 min. It is demonstrated that interstitial 3d transition metals such as vanadium, chromium, and iron tend to form complexes with hydrogen in n-type silicon, and the complexes induce donor levels below the donor levels of the isolated interstitial species. This trend is related to the interaction between the metals and hydrogen in the complexes.

Original languageEnglish
Pages (from-to)3828-3831
Number of pages4
JournalJournal of Applied Physics
Volume82
Issue number8
DOIs
Publication statusPublished - Oct 15 1997

Fingerprint

interstitials
iron
traps
silicon
hydrogen
capacitance
carrier injection
minority carriers
vanadium
chromium
transition metals
trends
acids
annealing
metals
interactions

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy(all)

Cite this

Sadoh, T., Tsukamoto, K., Baba, A., Bai, D., Kenjo, A., Tsurushima, T., ... Nakashima, H. (1997). Deep level of iron-hydrogen complex in silicon. Journal of Applied Physics, 82(8), 3828-3831. https://doi.org/10.1063/1.365746

Deep level of iron-hydrogen complex in silicon. / Sadoh, Taizoh; Tsukamoto, K.; Baba, A.; Bai, D.; Kenjo, A.; Tsurushima, T.; Mori, H.; Nakashima, Hiroshi.

In: Journal of Applied Physics, Vol. 82, No. 8, 15.10.1997, p. 3828-3831.

Research output: Contribution to journalArticle

Sadoh, T, Tsukamoto, K, Baba, A, Bai, D, Kenjo, A, Tsurushima, T, Mori, H & Nakashima, H 1997, 'Deep level of iron-hydrogen complex in silicon', Journal of Applied Physics, vol. 82, no. 8, pp. 3828-3831. https://doi.org/10.1063/1.365746
Sadoh T, Tsukamoto K, Baba A, Bai D, Kenjo A, Tsurushima T et al. Deep level of iron-hydrogen complex in silicon. Journal of Applied Physics. 1997 Oct 15;82(8):3828-3831. https://doi.org/10.1063/1.365746
Sadoh, Taizoh ; Tsukamoto, K. ; Baba, A. ; Bai, D. ; Kenjo, A. ; Tsurushima, T. ; Mori, H. ; Nakashima, Hiroshi. / Deep level of iron-hydrogen complex in silicon. In: Journal of Applied Physics. 1997 ; Vol. 82, No. 8. pp. 3828-3831.
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