Deep levels of chromium-hydrogen complexes in silicon

T. Sadoh; M. Watanabe; H. Nakashima; T. Tsurushima

doi:10.1063/1.356018

Deep levels of chromium-hydrogen complexes in silicon

T. Sadoh, M. Watanabe, H. Nakashima, T. Tsurushima

Electronic Devices

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12 Citations (Scopus)

Abstract

Deep levels related to chromium in n-type silicon have been investigated using deep level transient spectroscopy (DLTS) and concentration profile measurements. The DLTS measurement reveals four electron traps of E _C-0.22, E_C-0.28, E_C-0.45, and E _C-0.54 eV in chromium-doped samples. The trap of E_C-0.22 eV is a donor due to interstitial chromium. The other three traps are observed near the surface region of samples etched with an acid mixture containing HF and HNO₃ and annihilate after annealing at 175°C for 30 min. The origin of these traps has been studied by isochronal annealing and various chemical treatments. It is demonstrated that the three electron traps are due to complexes of interstitial chromium and hydrogen.

Original language	English
Pages (from-to)	3978-3981
Number of pages	4
Journal	Journal of Applied Physics
Volume	75
Issue number	8
DOIs	https://doi.org/10.1063/1.356018
Publication status	Published - 1994

All Science Journal Classification (ASJC) codes

Physics and Astronomy(all)

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10.1063/1.356018

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title = "Deep levels of chromium-hydrogen complexes in silicon",

abstract = "Deep levels related to chromium in n-type silicon have been investigated using deep level transient spectroscopy (DLTS) and concentration profile measurements. The DLTS measurement reveals four electron traps of E C-0.22, EC-0.28, EC-0.45, and E C-0.54 eV in chromium-doped samples. The trap of EC-0.22 eV is a donor due to interstitial chromium. The other three traps are observed near the surface region of samples etched with an acid mixture containing HF and HNO3 and annihilate after annealing at 175°C for 30 min. The origin of these traps has been studied by isochronal annealing and various chemical treatments. It is demonstrated that the three electron traps are due to complexes of interstitial chromium and hydrogen.",

author = "T. Sadoh and M. Watanabe and H. Nakashima and T. Tsurushima",

year = "1994",

doi = "10.1063/1.356018",

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T1 - Deep levels of chromium-hydrogen complexes in silicon

AU - Sadoh, T.

AU - Watanabe, M.

AU - Nakashima, H.

AU - Tsurushima, T.

PY - 1994

Y1 - 1994

N2 - Deep levels related to chromium in n-type silicon have been investigated using deep level transient spectroscopy (DLTS) and concentration profile measurements. The DLTS measurement reveals four electron traps of E C-0.22, EC-0.28, EC-0.45, and E C-0.54 eV in chromium-doped samples. The trap of EC-0.22 eV is a donor due to interstitial chromium. The other three traps are observed near the surface region of samples etched with an acid mixture containing HF and HNO3 and annihilate after annealing at 175°C for 30 min. The origin of these traps has been studied by isochronal annealing and various chemical treatments. It is demonstrated that the three electron traps are due to complexes of interstitial chromium and hydrogen.

AB - Deep levels related to chromium in n-type silicon have been investigated using deep level transient spectroscopy (DLTS) and concentration profile measurements. The DLTS measurement reveals four electron traps of E C-0.22, EC-0.28, EC-0.45, and E C-0.54 eV in chromium-doped samples. The trap of EC-0.22 eV is a donor due to interstitial chromium. The other three traps are observed near the surface region of samples etched with an acid mixture containing HF and HNO3 and annihilate after annealing at 175°C for 30 min. The origin of these traps has been studied by isochronal annealing and various chemical treatments. It is demonstrated that the three electron traps are due to complexes of interstitial chromium and hydrogen.

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Deep levels of chromium-hydrogen complexes in silicon

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