Deep levels of vanadium- and chromium-hydrogen complexes in silicon

Taizoh Sadoh, M. Watanabe, Hiroshi Nakashima, T. Tsurushima

Research output: Contribution to journalConference article

6 Citations (Scopus)

Abstract

Deep levels related to vanadium and chromium in n-type silicon have been studied using deep level transient spectroscopy (DLTS) and concentration profile measurements. In addition to traps due to interstitial species, an electron trap of EC-0.49 eV is observed in vanadium-doped n-type silicon, and three electron traps of EC-0.28, EC-0.45, and EC-0.54 eV are observed in chromium-doped n-type silicon by DLTS. These traps are observed only in the surface region of samples etched chemically with a mixture containing HF and HNO3 and annihilate after annealing at around 200 °C for 30 min. These traps are investigated by annealing and various chemical treatments. It is demonstrated that the traps are due to complexes ofhydrogen and interstitial vanadium or interstitial chromium.

Original languageEnglish
Pages (from-to)939-944
Number of pages6
JournalMaterials Science Forum
Volume143-4
Issue numberpt 2
Publication statusPublished - Dec 1 1994
EventProceedings of the 17th International Conference on Defects in Semiconductors. Part 1 (of 3) - Gmunden, Austria
Duration: Jul 18 1993Jul 23 1993

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All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

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