Deep levels of vanadium and vanadium-hydrogen complex in silicon

T. Sadoh; H. Nakashima; T. Tsurushima

doi:10.1063/1.352353

Deep levels of vanadium and vanadium-hydrogen complex in silicon

T. Sadoh, H. Nakashima, T. Tsurushima

Electronic Devices

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Abstract

Deep levels in vanadium-doped n- and p-type silicon have been investigated using deep level transient spectroscopy (DLTS) and concentration profile measurements. The DLTS measurement reveals two electron traps of E _C-0.20 eV and E_C-0.45 eV, and a hole trap of E _V+0.34 eV. These three levels correspond to the transitions between four charge states of interstitial vanadium. Furthermore, an electron trap of E_C-0.49 eV is observed near the surface region of n-type samples etched with an acid mixture containing HF and HNO₃. The origin of the trap has precisely been investigated by isochronal anneals and various chemical treatments. From these investigations, it is found that the trap is due to a complex of interstitial vanadium with hydrogen introduced by chemical etching.

Original language	English
Pages (from-to)	520-524
Number of pages	5
Journal	Journal of Applied Physics
Volume	72
Issue number	2
DOIs	https://doi.org/10.1063/1.352353
Publication status	Published - 1992

All Science Journal Classification (ASJC) codes

Physics and Astronomy(all)

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10.1063/1.352353

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abstract = "Deep levels in vanadium-doped n- and p-type silicon have been investigated using deep level transient spectroscopy (DLTS) and concentration profile measurements. The DLTS measurement reveals two electron traps of E C-0.20 eV and EC-0.45 eV, and a hole trap of E V+0.34 eV. These three levels correspond to the transitions between four charge states of interstitial vanadium. Furthermore, an electron trap of EC-0.49 eV is observed near the surface region of n-type samples etched with an acid mixture containing HF and HNO3. The origin of the trap has precisely been investigated by isochronal anneals and various chemical treatments. From these investigations, it is found that the trap is due to a complex of interstitial vanadium with hydrogen introduced by chemical etching.",

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AU - Sadoh, T.

AU - Nakashima, H.

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AB - Deep levels in vanadium-doped n- and p-type silicon have been investigated using deep level transient spectroscopy (DLTS) and concentration profile measurements. The DLTS measurement reveals two electron traps of E C-0.20 eV and EC-0.45 eV, and a hole trap of E V+0.34 eV. These three levels correspond to the transitions between four charge states of interstitial vanadium. Furthermore, an electron trap of EC-0.49 eV is observed near the surface region of n-type samples etched with an acid mixture containing HF and HNO3. The origin of the trap has precisely been investigated by isochronal anneals and various chemical treatments. From these investigations, it is found that the trap is due to a complex of interstitial vanadium with hydrogen introduced by chemical etching.

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Deep levels of vanadium and vanadium-hydrogen complex in silicon

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