TY - JOUR
T1 - Deep-Red Amplified Spontaneous Emission from cis-Configured Squaraine
AU - Ye, Hao
AU - Cui, Linsong
AU - Matsushima, Toshinori
AU - Qin, Chuanjiang
AU - Adachi, Chihaya
N1 - Funding Information:
This work was supported by JST ERATO Grant JPMJER1305, Japan, and the International Institute for Carbon Neutral Energy Research (WPI-I2CNER) sponsored by the Ministry of Education, Culture, Sports, Science, and Technology.
Publisher Copyright:
© 2017 American Chemical Society.
PY - 2018/1/10
Y1 - 2018/1/10
N2 - We report deep-red amplified spontaneous emission (ASE) from cis-configured squaraine (cis-DCSQ1) under optical pumping. Doping of cis-DCSQ1 into a 4,4′-bis(9-carbazolyl)-2,2′-biphenyl (CBP) host film at an appropriate concentration (0.5 wt % for this system) led to a marked increase of photoluminescence quantum yield because of efficient CBP-to-cis-DCSQ1 Förster resonance energy transfer and suppression of aggregation-caused quenching. Thus, this doped film showed clear ASE with a threshold of around 10 μJ cm-2 and peak wavelength of 687 nm. These results proved that cis-configured squaraine derivatives are promising as gain materials for future applications as deep-red organic lasers.
AB - We report deep-red amplified spontaneous emission (ASE) from cis-configured squaraine (cis-DCSQ1) under optical pumping. Doping of cis-DCSQ1 into a 4,4′-bis(9-carbazolyl)-2,2′-biphenyl (CBP) host film at an appropriate concentration (0.5 wt % for this system) led to a marked increase of photoluminescence quantum yield because of efficient CBP-to-cis-DCSQ1 Förster resonance energy transfer and suppression of aggregation-caused quenching. Thus, this doped film showed clear ASE with a threshold of around 10 μJ cm-2 and peak wavelength of 687 nm. These results proved that cis-configured squaraine derivatives are promising as gain materials for future applications as deep-red organic lasers.
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U2 - 10.1021/acsami.7b15562
DO - 10.1021/acsami.7b15562
M3 - Article
C2 - 29243913
AN - SCOPUS:85040362756
SN - 1944-8244
VL - 10
SP - 27
EP - 31
JO - ACS applied materials & interfaces
JF - ACS applied materials & interfaces
IS - 1
ER -