Deep states in silicon on sapphire by transient-current spectroscopy

Taizoh Sadoh, A. Matsushita, Y. Q. Zhang, D. J. Bai, A. Baba, A. Kenjo, T. Tsurushima, H. Mori, Hiroshi Nakashima

Research output: Contribution to journalArticle

3 Citations (Scopus)

Abstract

It is demonstrated that deep states in silicon on sapphire (SOS) films can be evaluated by transient-current spectroscopy (TCS). In the TCS spectra, a broad peak extending over 100-200 K was observed for the 6000-Å-thick n-type SOS film. Assuming the value of capture cross section to be 10 -15 cm 2 and independent of temperature, the density distribution of deep states was estimated. The density distribution shows a peak of 1.2×10 12 cm -2 eV -1 at E C -0.25 eV. Raman backscattering spectroscopy was also performed to evaluate the stress in the silicon film. It was concluded that the defects detected by TCS should be caused by the compressive stress of 6.2 × 10 8 Pa in the silicon film.

Original languageEnglish
Pages (from-to)5262-5264
Number of pages3
JournalJournal of Applied Physics
Volume82
Issue number10
DOIs
Publication statusPublished - Nov 15 1997

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sapphire
silicon
silicon films
spectroscopy
density distribution
absorption cross sections
backscattering
defects
temperature

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy(all)

Cite this

Deep states in silicon on sapphire by transient-current spectroscopy. / Sadoh, Taizoh; Matsushita, A.; Zhang, Y. Q.; Bai, D. J.; Baba, A.; Kenjo, A.; Tsurushima, T.; Mori, H.; Nakashima, Hiroshi.

In: Journal of Applied Physics, Vol. 82, No. 10, 15.11.1997, p. 5262-5264.

Research output: Contribution to journalArticle

Sadoh, T, Matsushita, A, Zhang, YQ, Bai, DJ, Baba, A, Kenjo, A, Tsurushima, T, Mori, H & Nakashima, H 1997, 'Deep states in silicon on sapphire by transient-current spectroscopy', Journal of Applied Physics, vol. 82, no. 10, pp. 5262-5264. https://doi.org/10.1063/1.366394
Sadoh T, Matsushita A, Zhang YQ, Bai DJ, Baba A, Kenjo A et al. Deep states in silicon on sapphire by transient-current spectroscopy. Journal of Applied Physics. 1997 Nov 15;82(10):5262-5264. https://doi.org/10.1063/1.366394
Sadoh, Taizoh ; Matsushita, A. ; Zhang, Y. Q. ; Bai, D. J. ; Baba, A. ; Kenjo, A. ; Tsurushima, T. ; Mori, H. ; Nakashima, Hiroshi. / Deep states in silicon on sapphire by transient-current spectroscopy. In: Journal of Applied Physics. 1997 ; Vol. 82, No. 10. pp. 5262-5264.
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AU - Mori, H.

AU - Nakashima, Hiroshi

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