Deep states in silicon on sapphire by transient-current spectroscopy

T. Sadoh, A. Matsushita, Y. Q. Zhang, D. J. Bai, A. Baba, A. Kenjo, T. Tsurushima, H. Mori, H. Nakashima

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3 Citations (Scopus)

Abstract

It is demonstrated that deep states in silicon on sapphire (SOS) films can be evaluated by transient-current spectroscopy (TCS). In the TCS spectra, a broad peak extending over 100-200 K was observed for the 6000-Å-thick n-type SOS film. Assuming the value of capture cross section to be 10-15 cm2 and independent of temperature, the density distribution of deep states was estimated. The density distribution shows a peak of 1.2×1012 cm-2 eV-1 at EC-0.25 eV. Raman backscattering spectroscopy was also performed to evaluate the stress in the silicon film. It was concluded that the defects detected by TCS should be caused by the compressive stress of 6.2 × 108 Pa in the silicon film.

Original languageEnglish
Pages (from-to)5262-5264
Number of pages3
JournalJournal of Applied Physics
Volume82
Issue number10
DOIs
Publication statusPublished - Nov 15 1997

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy(all)

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    Sadoh, T., Matsushita, A., Zhang, Y. Q., Bai, D. J., Baba, A., Kenjo, A., Tsurushima, T., Mori, H., & Nakashima, H. (1997). Deep states in silicon on sapphire by transient-current spectroscopy. Journal of Applied Physics, 82(10), 5262-5264. https://doi.org/10.1063/1.366394