Deep ultraviolet raman microspectroscopic characterization of polishing-induced surface damage in SiC crystals

S. Nakashima, T. Kato, S. Nishizawa, T. Mitani, H. Okumura, T. Yamamoto

Research output: Contribution to journalArticle

8 Citations (Scopus)

Abstract

We have investigated polishing-induced surface damage in nitrogen-doped {0001} 4H-SiC crystals with silicon and carbon faces through deep ultraviolet Raman microspectroscopy. The structural and electrical properties of the damaged layers were characterized as a function of the abrasive particle size, using pure phonon modes and a longitudinal-optical-phonon plasmon coupled mode as monitor bands. The degree of damage decreased with the size. Although abrasive polishing with finer particles enables the long-range order of the lattice to almost fully recover, the carrier density remains partly reduced in the polished surface layers. The number of defects that induces a reduction in the free carrier density differs between the Si and C faces of 4H-SiC crystals.

Original languageEnglish
JournalJournal of the Electrochemical Society
Volume153
Issue number4
DOIs
Publication statusPublished - Apr 1 2006
Externally publishedYes

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Renewable Energy, Sustainability and the Environment
  • Surfaces, Coatings and Films
  • Electrochemistry
  • Materials Chemistry

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