Deep UV Raman spectroscopy of epitaxial graphenes on vicinal 6H-SiC substrates

S. Kamoi, N. Hasuike, K. Kisoda, H. Harima, K. Morita, Tanaka Satoru, A. Hashimoto

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

We report microscopic Raman scattering studies of epitaxial graphene grown on SiC substrates using a deep-ultraviolet (UV) laser excitation at 266 nm to elucidate the interaction between the graphene layer and the substrate. The samples were grown on the Si-face of vicinal 6H-SiC (0001) substrates by sublimation of Si from SiC. The G band of the epitaxial graphene layer was clearly observed without any data manipulation. Increasing the number of graphene layers, the peak frequency of the G-band decreases linearly, while the peak width and the intensity increase. The G-band frequency of the graphene layers on SiC is higher than those of exfoliated graphene, which has been ascribed to compression from the substrate.

Original languageEnglish
Title of host publicationSilicon Carbide and Related Materials 2009
Subtitle of host publicationICSCRM 2009
PublisherTrans Tech Publications Ltd
Pages611-614
Number of pages4
ISBN (Print)0878492798, 9780878492794
DOIs
Publication statusPublished - Jan 1 2010
Event13th International Conference on Silicon Carbide and Related Materials 2009, ICSCRM 2009 - Nurnberg, Germany
Duration: Oct 11 2009Oct 16 2009

Publication series

NameMaterials Science Forum
Volume645-648
ISSN (Print)0255-5476

Other

Other13th International Conference on Silicon Carbide and Related Materials 2009, ICSCRM 2009
CountryGermany
CityNurnberg
Period10/11/0910/16/09

Fingerprint

Graphite
ultraviolet spectroscopy
Ultraviolet spectroscopy
Graphene
Raman spectroscopy
graphene
Substrates
Ultraviolet lasers
Laser excitation
Sublimation
ultraviolet lasers
sublimation
Frequency bands
Raman scattering
manipulators
Compaction
Raman spectra
excitation
interactions

All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

Cite this

Kamoi, S., Hasuike, N., Kisoda, K., Harima, H., Morita, K., Satoru, T., & Hashimoto, A. (2010). Deep UV Raman spectroscopy of epitaxial graphenes on vicinal 6H-SiC substrates. In Silicon Carbide and Related Materials 2009: ICSCRM 2009 (pp. 611-614). (Materials Science Forum; Vol. 645-648). Trans Tech Publications Ltd. https://doi.org/10.4028/www.scientific.net/MSF.645-648.611

Deep UV Raman spectroscopy of epitaxial graphenes on vicinal 6H-SiC substrates. / Kamoi, S.; Hasuike, N.; Kisoda, K.; Harima, H.; Morita, K.; Satoru, Tanaka; Hashimoto, A.

Silicon Carbide and Related Materials 2009: ICSCRM 2009. Trans Tech Publications Ltd, 2010. p. 611-614 (Materials Science Forum; Vol. 645-648).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Kamoi, S, Hasuike, N, Kisoda, K, Harima, H, Morita, K, Satoru, T & Hashimoto, A 2010, Deep UV Raman spectroscopy of epitaxial graphenes on vicinal 6H-SiC substrates. in Silicon Carbide and Related Materials 2009: ICSCRM 2009. Materials Science Forum, vol. 645-648, Trans Tech Publications Ltd, pp. 611-614, 13th International Conference on Silicon Carbide and Related Materials 2009, ICSCRM 2009, Nurnberg, Germany, 10/11/09. https://doi.org/10.4028/www.scientific.net/MSF.645-648.611
Kamoi S, Hasuike N, Kisoda K, Harima H, Morita K, Satoru T et al. Deep UV Raman spectroscopy of epitaxial graphenes on vicinal 6H-SiC substrates. In Silicon Carbide and Related Materials 2009: ICSCRM 2009. Trans Tech Publications Ltd. 2010. p. 611-614. (Materials Science Forum). https://doi.org/10.4028/www.scientific.net/MSF.645-648.611
Kamoi, S. ; Hasuike, N. ; Kisoda, K. ; Harima, H. ; Morita, K. ; Satoru, Tanaka ; Hashimoto, A. / Deep UV Raman spectroscopy of epitaxial graphenes on vicinal 6H-SiC substrates. Silicon Carbide and Related Materials 2009: ICSCRM 2009. Trans Tech Publications Ltd, 2010. pp. 611-614 (Materials Science Forum).
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