Defect analysis of SiC sublimation growth by the in-situ X-ray topography

T. Kato, N. Oyanagi, H. Yamaguchi, Shinichi Nishizawa, K. Arai

Research output: Contribution to journalConference article

Abstract

Silicon carbide (SiC) single crystal growth was studied by the in-situ observation using x-ray topographic technique. Occurrence and dynamics of defects, dislocations were observed in a real time display and captured as topographic images during sublimation growth (modified Lely method) of SiC crystals. From the analysis of these topographic images, high-density of dislocations and typical large defects, such as micropipes, domain boundaries and macrodefects were investigated. On the basis of our in-situ observation and analysis, we argue that dislocation and nucleation control on the seed crystal during initial growth are of prime importance for producing high quality SiC crystals.

Original languageEnglish
Pages (from-to)295-298
Number of pages4
JournalMaterials Science Forum
Volume353-356
Publication statusPublished - Jan 1 2001
Externally publishedYes

Fingerprint

Sublimation
sublimation
Silicon carbide
silicon carbides
Topography
topography
X rays
Defects
Crystals
defects
crystals
x rays
Crystallization
Dislocations (crystals)
Crystal growth
crystal growth
seeds
Nucleation
Display devices
Single crystals

All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

Cite this

Kato, T., Oyanagi, N., Yamaguchi, H., Nishizawa, S., & Arai, K. (2001). Defect analysis of SiC sublimation growth by the in-situ X-ray topography. Materials Science Forum, 353-356, 295-298.

Defect analysis of SiC sublimation growth by the in-situ X-ray topography. / Kato, T.; Oyanagi, N.; Yamaguchi, H.; Nishizawa, Shinichi; Arai, K.

In: Materials Science Forum, Vol. 353-356, 01.01.2001, p. 295-298.

Research output: Contribution to journalConference article

Kato, T, Oyanagi, N, Yamaguchi, H, Nishizawa, S & Arai, K 2001, 'Defect analysis of SiC sublimation growth by the in-situ X-ray topography', Materials Science Forum, vol. 353-356, pp. 295-298.
Kato, T. ; Oyanagi, N. ; Yamaguchi, H. ; Nishizawa, Shinichi ; Arai, K. / Defect analysis of SiC sublimation growth by the in-situ X-ray topography. In: Materials Science Forum. 2001 ; Vol. 353-356. pp. 295-298.
@article{86f584b24d2542c5bf67f8a6fc8d90e2,
title = "Defect analysis of SiC sublimation growth by the in-situ X-ray topography",
abstract = "Silicon carbide (SiC) single crystal growth was studied by the in-situ observation using x-ray topographic technique. Occurrence and dynamics of defects, dislocations were observed in a real time display and captured as topographic images during sublimation growth (modified Lely method) of SiC crystals. From the analysis of these topographic images, high-density of dislocations and typical large defects, such as micropipes, domain boundaries and macrodefects were investigated. On the basis of our in-situ observation and analysis, we argue that dislocation and nucleation control on the seed crystal during initial growth are of prime importance for producing high quality SiC crystals.",
author = "T. Kato and N. Oyanagi and H. Yamaguchi and Shinichi Nishizawa and K. Arai",
year = "2001",
month = "1",
day = "1",
language = "English",
volume = "353-356",
pages = "295--298",
journal = "Materials Science Forum",
issn = "0255-5476",
publisher = "Trans Tech Publications",

}

TY - JOUR

T1 - Defect analysis of SiC sublimation growth by the in-situ X-ray topography

AU - Kato, T.

AU - Oyanagi, N.

AU - Yamaguchi, H.

AU - Nishizawa, Shinichi

AU - Arai, K.

PY - 2001/1/1

Y1 - 2001/1/1

N2 - Silicon carbide (SiC) single crystal growth was studied by the in-situ observation using x-ray topographic technique. Occurrence and dynamics of defects, dislocations were observed in a real time display and captured as topographic images during sublimation growth (modified Lely method) of SiC crystals. From the analysis of these topographic images, high-density of dislocations and typical large defects, such as micropipes, domain boundaries and macrodefects were investigated. On the basis of our in-situ observation and analysis, we argue that dislocation and nucleation control on the seed crystal during initial growth are of prime importance for producing high quality SiC crystals.

AB - Silicon carbide (SiC) single crystal growth was studied by the in-situ observation using x-ray topographic technique. Occurrence and dynamics of defects, dislocations were observed in a real time display and captured as topographic images during sublimation growth (modified Lely method) of SiC crystals. From the analysis of these topographic images, high-density of dislocations and typical large defects, such as micropipes, domain boundaries and macrodefects were investigated. On the basis of our in-situ observation and analysis, we argue that dislocation and nucleation control on the seed crystal during initial growth are of prime importance for producing high quality SiC crystals.

UR - http://www.scopus.com/inward/record.url?scp=0035126835&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0035126835&partnerID=8YFLogxK

M3 - Conference article

AN - SCOPUS:0035126835

VL - 353-356

SP - 295

EP - 298

JO - Materials Science Forum

JF - Materials Science Forum

SN - 0255-5476

ER -