Defect and growth analysis of SiC bulk single crystals with high nitrogen doping

Tomohisa Kato, Tomonori Miura, Keisuke Wada, Eiji Hozomi, Hiroyoshi Taniguchi, Shinichi Nishizawa, Kazuo Arai

Research output: Contribution to journalConference article

16 Citations (Scopus)

Abstract

In this study, we report defect analysis in 4H-SiC crystals of high nitrogen doping grown by sublimation method, and we discuss key points for defect restraint. The growth was performed in two kinds of growth directions; c-axis and a-axis. In the c-axis grown crystal with carrier density greater than 1 × 10-19cm-3, defect propagation was confirmed in the vertical direction for a growth direction affected by the doping by x-ray topography. This phenomenon was not observed in the a-axis grown crystals. In sublimation growth, the quantity of impurities tends to increase as growth rate decreases. Therefore, in the c-axis growth of doped 4H-SiC bulk crystals, we have to be careful so that dopant does not increase too much without intention in grown layers with lower growth rate, for example at the beginning and end of the growth.

Original languageEnglish
Pages (from-to)239-242
Number of pages4
JournalMaterials Science Forum
Volume556-557
Publication statusPublished - Dec 1 2007
Event6th European Conference on Silicon Carbide and Related Materials, ECSCRM 2006 - Newcastle upon Tyne, United Kingdom
Duration: Sep 3 2006Sep 7 2007

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Nitrogen
Doping (additives)
Single crystals
nitrogen
Defects
single crystals
defects
Crystals
Sublimation
sublimation
crystals
Topography
Carrier concentration
Impurities
X rays
topography
impurities
propagation
Direction compound
x rays

All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

Cite this

Kato, T., Miura, T., Wada, K., Hozomi, E., Taniguchi, H., Nishizawa, S., & Arai, K. (2007). Defect and growth analysis of SiC bulk single crystals with high nitrogen doping. Materials Science Forum, 556-557, 239-242.

Defect and growth analysis of SiC bulk single crystals with high nitrogen doping. / Kato, Tomohisa; Miura, Tomonori; Wada, Keisuke; Hozomi, Eiji; Taniguchi, Hiroyoshi; Nishizawa, Shinichi; Arai, Kazuo.

In: Materials Science Forum, Vol. 556-557, 01.12.2007, p. 239-242.

Research output: Contribution to journalConference article

Kato, T, Miura, T, Wada, K, Hozomi, E, Taniguchi, H, Nishizawa, S & Arai, K 2007, 'Defect and growth analysis of SiC bulk single crystals with high nitrogen doping', Materials Science Forum, vol. 556-557, pp. 239-242.
Kato T, Miura T, Wada K, Hozomi E, Taniguchi H, Nishizawa S et al. Defect and growth analysis of SiC bulk single crystals with high nitrogen doping. Materials Science Forum. 2007 Dec 1;556-557:239-242.
Kato, Tomohisa ; Miura, Tomonori ; Wada, Keisuke ; Hozomi, Eiji ; Taniguchi, Hiroyoshi ; Nishizawa, Shinichi ; Arai, Kazuo. / Defect and growth analysis of SiC bulk single crystals with high nitrogen doping. In: Materials Science Forum. 2007 ; Vol. 556-557. pp. 239-242.
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