TY - GEN
T1 - Defect and growth analysis of SiC bulk single crystals with high nitrogen doping
AU - Kato, Tomohisa
AU - Miura, Tomonori
AU - Wada, Keisuke
AU - Hozomi, Eiji
AU - Taniguchi, Hiroyoshi
AU - Nishizawa, Shin Ichi
AU - Arai, Kazuo
PY - 2007/1/1
Y1 - 2007/1/1
N2 - In this study, we report defect analysis in 4H-SiC crystals of high nitrogen doping grown by sublimation method, and we discuss key points for defect restraint. The growth was performed in two kinds of growth directions; c-axis and a-axis. In the c-axis grown crystal with carrier density greater than 1 × 10-19cm-3, defect propagation was confirmed in the vertical direction for a growth direction affected by the doping by x-ray topography. This phenomenon was not observed in the a-axis grown crystals. In sublimation growth, the quantity of impurities tends to increase as growth rate decreases. Therefore, in the c-axis growth of doped 4H-SiC bulk crystals, we have to be careful so that dopant does not increase too much without intention in grown layers with lower growth rate, for example at the beginning and end of the growth.
AB - In this study, we report defect analysis in 4H-SiC crystals of high nitrogen doping grown by sublimation method, and we discuss key points for defect restraint. The growth was performed in two kinds of growth directions; c-axis and a-axis. In the c-axis grown crystal with carrier density greater than 1 × 10-19cm-3, defect propagation was confirmed in the vertical direction for a growth direction affected by the doping by x-ray topography. This phenomenon was not observed in the a-axis grown crystals. In sublimation growth, the quantity of impurities tends to increase as growth rate decreases. Therefore, in the c-axis growth of doped 4H-SiC bulk crystals, we have to be careful so that dopant does not increase too much without intention in grown layers with lower growth rate, for example at the beginning and end of the growth.
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U2 - 10.4028/0-87849-442-1.239
DO - 10.4028/0-87849-442-1.239
M3 - Conference contribution
AN - SCOPUS:85085716825
SN - 0878494421
SN - 9780878494422
SN - 9780878494422
T3 - Materials Science Forum
SP - 239
EP - 242
BT - Silicon Carbide and Related Materials 2006 - ECSCRM 20006 - Proceedings of the 6th European Conference on Silicon Carbide and Related Materials
A2 - Wright, N.
A2 - Johnson, C.M.
A2 - Vassilevski, K.
A2 - Nikitina, I.
A2 - Horsfall, A.
PB - Trans Tech Publications Ltd
T2 - 6th European Conference on Silicon Carbide and Related Materials, ECSCRM 2006
Y2 - 3 September 2006 through 7 September 2007
ER -