Defect characterization and control for SiGe-on-insulator

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

Defects in SiGe-On-Insulator (SGOI) fabricated using Ge condensation by dry oxidation method were characterized by optical and electrical methods. The locations of main defect levels were determined to be above mid-gap for SGOI with low Ge fraction (Ge%), which tend to valance band direction and unintentionally induce high hole concentration in SGOI with increasing Ge%. The suppression of defects by post-Al2O3-deposition-annealing was also discussed.

Original languageEnglish
Title of host publicationICSICT-2010 - 2010 10th IEEE International Conference on Solid-State and Integrated Circuit Technology, Proceedings
Pages1525-1528
Number of pages4
DOIs
Publication statusPublished - Dec 1 2010
Event2010 10th IEEE International Conference on Solid-State and Integrated Circuit Technology - Shanghai, China
Duration: Nov 1 2010Nov 4 2010

Publication series

NameICSICT-2010 - 2010 10th IEEE International Conference on Solid-State and Integrated Circuit Technology, Proceedings

Other

Other2010 10th IEEE International Conference on Solid-State and Integrated Circuit Technology
CountryChina
CityShanghai
Period11/1/1011/4/10

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All Science Journal Classification (ASJC) codes

  • Hardware and Architecture
  • Electrical and Electronic Engineering

Cite this

Wang, D., Yang, H., & Nakashima, H. (2010). Defect characterization and control for SiGe-on-insulator. In ICSICT-2010 - 2010 10th IEEE International Conference on Solid-State and Integrated Circuit Technology, Proceedings (pp. 1525-1528). [5667501] (ICSICT-2010 - 2010 10th IEEE International Conference on Solid-State and Integrated Circuit Technology, Proceedings). https://doi.org/10.1109/ICSICT.2010.5667501