TY - GEN
T1 - Defect characterization and control for SiGe-on-insulator
AU - Wang, Dong
AU - Yang, Haigui
AU - Nakashima, Hiroshi
PY - 2010
Y1 - 2010
N2 - Defects in SiGe-On-Insulator (SGOI) fabricated using Ge condensation by dry oxidation method were characterized by optical and electrical methods. The locations of main defect levels were determined to be above mid-gap for SGOI with low Ge fraction (Ge%), which tend to valance band direction and unintentionally induce high hole concentration in SGOI with increasing Ge%. The suppression of defects by post-Al2O3-deposition-annealing was also discussed.
AB - Defects in SiGe-On-Insulator (SGOI) fabricated using Ge condensation by dry oxidation method were characterized by optical and electrical methods. The locations of main defect levels were determined to be above mid-gap for SGOI with low Ge fraction (Ge%), which tend to valance band direction and unintentionally induce high hole concentration in SGOI with increasing Ge%. The suppression of defects by post-Al2O3-deposition-annealing was also discussed.
UR - http://www.scopus.com/inward/record.url?scp=78751538314&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=78751538314&partnerID=8YFLogxK
U2 - 10.1109/ICSICT.2010.5667501
DO - 10.1109/ICSICT.2010.5667501
M3 - Conference contribution
AN - SCOPUS:78751538314
SN - 9781424457984
T3 - ICSICT-2010 - 2010 10th IEEE International Conference on Solid-State and Integrated Circuit Technology, Proceedings
SP - 1525
EP - 1528
BT - ICSICT-2010 - 2010 10th IEEE International Conference on Solid-State and Integrated Circuit Technology, Proceedings
T2 - 2010 10th IEEE International Conference on Solid-State and Integrated Circuit Technology
Y2 - 1 November 2010 through 4 November 2010
ER -