Defect characterization and control for SiGe-on-insulator

Dong Wang; Haigui Yang; Hiroshi Nakashima

doi:10.1109/ICSICT.2010.5667501

Defect characterization and control for SiGe-on-insulator

Dong Wang, Haigui Yang, Hiroshi Nakashima

Energy Engineering Sciences

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

Defects in SiGe-On-Insulator (SGOI) fabricated using Ge condensation by dry oxidation method were characterized by optical and electrical methods. The locations of main defect levels were determined to be above mid-gap for SGOI with low Ge fraction (Ge%), which tend to valance band direction and unintentionally induce high hole concentration in SGOI with increasing Ge%. The suppression of defects by post-Al₂O₃-deposition-annealing was also discussed.

Original language	English
Title of host publication	ICSICT-2010 - 2010 10th IEEE International Conference on Solid-State and Integrated Circuit Technology, Proceedings
Pages	1525-1528
Number of pages	4
DOIs	https://doi.org/10.1109/ICSICT.2010.5667501
Publication status	Published - 2010
Event	2010 10th IEEE International Conference on Solid-State and Integrated Circuit Technology - Shanghai, China Duration: Nov 1 2010 → Nov 4 2010

Publication series

Name	ICSICT-2010 - 2010 10th IEEE International Conference on Solid-State and Integrated Circuit Technology, Proceedings

Other

Other	2010 10th IEEE International Conference on Solid-State and Integrated Circuit Technology
Country/Territory	China
City	Shanghai
Period	11/1/10 → 11/4/10

All Science Journal Classification (ASJC) codes

Hardware and Architecture
Electrical and Electronic Engineering

Access to Document

10.1109/ICSICT.2010.5667501

Cite this

Wang, D., Yang, H., & Nakashima, H. (2010). Defect characterization and control for SiGe-on-insulator. In ICSICT-2010 - 2010 10th IEEE International Conference on Solid-State and Integrated Circuit Technology, Proceedings (pp. 1525-1528). [5667501] (ICSICT-2010 - 2010 10th IEEE International Conference on Solid-State and Integrated Circuit Technology, Proceedings). https://doi.org/10.1109/ICSICT.2010.5667501

Defect characterization and control for SiGe-on-insulator. / Wang, Dong; Yang, Haigui; Nakashima, Hiroshi.

ICSICT-2010 - 2010 10th IEEE International Conference on Solid-State and Integrated Circuit Technology, Proceedings. 2010. p. 1525-1528 5667501 (ICSICT-2010 - 2010 10th IEEE International Conference on Solid-State and Integrated Circuit Technology, Proceedings).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Wang, D, Yang, H & Nakashima, H 2010, Defect characterization and control for SiGe-on-insulator. in ICSICT-2010 - 2010 10th IEEE International Conference on Solid-State and Integrated Circuit Technology, Proceedings., 5667501, ICSICT-2010 - 2010 10th IEEE International Conference on Solid-State and Integrated Circuit Technology, Proceedings, pp. 1525-1528, 2010 10th IEEE International Conference on Solid-State and Integrated Circuit Technology, Shanghai, China, 11/1/10. https://doi.org/10.1109/ICSICT.2010.5667501

Wang D, Yang H, Nakashima H. Defect characterization and control for SiGe-on-insulator. In ICSICT-2010 - 2010 10th IEEE International Conference on Solid-State and Integrated Circuit Technology, Proceedings. 2010. p. 1525-1528. 5667501. (ICSICT-2010 - 2010 10th IEEE International Conference on Solid-State and Integrated Circuit Technology, Proceedings). https://doi.org/10.1109/ICSICT.2010.5667501

@inproceedings{0e71df7f5a5e4f5e91384ee954e9b48c,

title = "Defect characterization and control for SiGe-on-insulator",

abstract = "Defects in SiGe-On-Insulator (SGOI) fabricated using Ge condensation by dry oxidation method were characterized by optical and electrical methods. The locations of main defect levels were determined to be above mid-gap for SGOI with low Ge fraction (Ge%), which tend to valance band direction and unintentionally induce high hole concentration in SGOI with increasing Ge%. The suppression of defects by post-Al2O3-deposition-annealing was also discussed.",

author = "Dong Wang and Haigui Yang and Hiroshi Nakashima",

year = "2010",

doi = "10.1109/ICSICT.2010.5667501",

language = "English",

isbn = "9781424457984",

series = "ICSICT-2010 - 2010 10th IEEE International Conference on Solid-State and Integrated Circuit Technology, Proceedings",

pages = "1525--1528",

booktitle = "ICSICT-2010 - 2010 10th IEEE International Conference on Solid-State and Integrated Circuit Technology, Proceedings",

note = "2010 10th IEEE International Conference on Solid-State and Integrated Circuit Technology ; Conference date: 01-11-2010 Through 04-11-2010",

}

TY - GEN

T1 - Defect characterization and control for SiGe-on-insulator

AU - Wang, Dong

AU - Yang, Haigui

AU - Nakashima, Hiroshi

PY - 2010

Y1 - 2010

N2 - Defects in SiGe-On-Insulator (SGOI) fabricated using Ge condensation by dry oxidation method were characterized by optical and electrical methods. The locations of main defect levels were determined to be above mid-gap for SGOI with low Ge fraction (Ge%), which tend to valance band direction and unintentionally induce high hole concentration in SGOI with increasing Ge%. The suppression of defects by post-Al2O3-deposition-annealing was also discussed.

AB - Defects in SiGe-On-Insulator (SGOI) fabricated using Ge condensation by dry oxidation method were characterized by optical and electrical methods. The locations of main defect levels were determined to be above mid-gap for SGOI with low Ge fraction (Ge%), which tend to valance band direction and unintentionally induce high hole concentration in SGOI with increasing Ge%. The suppression of defects by post-Al2O3-deposition-annealing was also discussed.

UR - http://www.scopus.com/inward/record.url?scp=78751538314&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=78751538314&partnerID=8YFLogxK

U2 - 10.1109/ICSICT.2010.5667501

DO - 10.1109/ICSICT.2010.5667501

M3 - Conference contribution

AN - SCOPUS:78751538314

SN - 9781424457984

T3 - ICSICT-2010 - 2010 10th IEEE International Conference on Solid-State and Integrated Circuit Technology, Proceedings

SP - 1525

EP - 1528

BT - ICSICT-2010 - 2010 10th IEEE International Conference on Solid-State and Integrated Circuit Technology, Proceedings

T2 - 2010 10th IEEE International Conference on Solid-State and Integrated Circuit Technology

Y2 - 1 November 2010 through 4 November 2010

ER -

Defect characterization and control for SiGe-on-insulator

Abstract

Publication series

Other

All Science Journal Classification (ASJC) codes

Access to Document

Other files and links

Fingerprint

Cite this