Defect characterization of 4H-SiC bulk crystals grown on micropipe filled seed crystals

Tomohisa Kato, Kazutoshi Kojima, Shinichi Nishizawa, Kazuo Arai

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

We report defects study in 4H-SiC bulk crystals grown by sublimation method on micropipe filled seed crystals oriented (0001) on-axis. The seed crystals of 1-3 inch in diameter were prepared from the large 4H-SiC bulk crystals. Before the sublimation growth, micropipes of the seed crystals were filled with epilayers grown by micropipe filling technique of CVD method. We confirmed about 95% of micropipes perfectly disappeared in the grown crystal. The mechanism of the micropipe extinction was also defined by defect analysis.

Original languageEnglish
Title of host publicationSilicon Carbide and Related Materials 2004, ECSCRM 2004 - Proceedings of 5th European Conference on Silicon Carbide and Related Materials
Pages315-318
Number of pages4
Publication statusPublished - Dec 1 2005
Externally publishedYes
Event5th European Conference on Silicon Carbide and Related Materials, ECRSCRM2004 - Bologna, Italy
Duration: Aug 31 2004Sep 4 2004

Publication series

NameMaterials Science Forum
Volume483-485
ISSN (Print)0255-5476

Other

Other5th European Conference on Silicon Carbide and Related Materials, ECRSCRM2004
Country/TerritoryItaly
CityBologna
Period8/31/049/4/04

All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

Fingerprint

Dive into the research topics of 'Defect characterization of 4H-SiC bulk crystals grown on micropipe filled seed crystals'. Together they form a unique fingerprint.

Cite this