TY - JOUR
T1 - Defect control by Al deposition and the subsequent post-annealing for SiGe-on-insulator substrates with different Ge fractions
AU - Yang, Haigui
AU - Wang, Dong
AU - Nakashima, Hiroshi
AU - Hirayama, Kana
AU - Kojima, Satoshi
AU - Ikeura, Shogo
N1 - Funding Information:
This study was supported in part by STARC and a Grant-in-Aid for Science Research on Priority Areas ( 20035011 ) from the Ministry of Education, Culture, Sports, Science and Technology of Japan .
PY - 2010/2/26
Y1 - 2010/2/26
N2 - SiGe-on-insulator (SGOI) substrates with different Ge fractions (Ge%) were fabricated using Ge condensation technique. High acceptor concentration (NA) in SGOI layer and interface-trap density (Dit) at SGOI/buried oxide (BOX) interface were found by using back-gate metal-oxide-semiconductor field-effect transistor method. For the reduction of high NA and Dit, Al deposition and the subsequent post-deposition annealing (Al-PDA) were carried out. As a comparison, a forming gas annealing (FGA) was also performed in H2 ambient. It was found that both Al-PDA and FGA effectively reduced NA and Dit for low-Ge% SGOI. However, with an increase in Ge%, FGA became less effective while Al-PDA was very effective for the reduction of NA and Dit.
AB - SiGe-on-insulator (SGOI) substrates with different Ge fractions (Ge%) were fabricated using Ge condensation technique. High acceptor concentration (NA) in SGOI layer and interface-trap density (Dit) at SGOI/buried oxide (BOX) interface were found by using back-gate metal-oxide-semiconductor field-effect transistor method. For the reduction of high NA and Dit, Al deposition and the subsequent post-deposition annealing (Al-PDA) were carried out. As a comparison, a forming gas annealing (FGA) was also performed in H2 ambient. It was found that both Al-PDA and FGA effectively reduced NA and Dit for low-Ge% SGOI. However, with an increase in Ge%, FGA became less effective while Al-PDA was very effective for the reduction of NA and Dit.
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U2 - 10.1016/j.tsf.2009.09.179
DO - 10.1016/j.tsf.2009.09.179
M3 - Article
AN - SCOPUS:76049125028
SN - 0040-6090
VL - 518
SP - 2342
EP - 2345
JO - Thin Solid Films
JF - Thin Solid Films
IS - 9
ER -