Defect control by Al deposition and the subsequent post-annealing for SiGe-on-insulator substrates with different Ge fractions

Haigui Yang, Dong Wang, Hiroshi Nakashima, Kana Hirayama, Satoshi Kojima, Shogo Ikeura

Research output: Contribution to journalArticlepeer-review

11 Citations (Scopus)

Abstract

SiGe-on-insulator (SGOI) substrates with different Ge fractions (Ge%) were fabricated using Ge condensation technique. High acceptor concentration (NA) in SGOI layer and interface-trap density (Dit) at SGOI/buried oxide (BOX) interface were found by using back-gate metal-oxide-semiconductor field-effect transistor method. For the reduction of high NA and Dit, Al deposition and the subsequent post-deposition annealing (Al-PDA) were carried out. As a comparison, a forming gas annealing (FGA) was also performed in H2 ambient. It was found that both Al-PDA and FGA effectively reduced NA and Dit for low-Ge% SGOI. However, with an increase in Ge%, FGA became less effective while Al-PDA was very effective for the reduction of NA and Dit.

Original languageEnglish
Pages (from-to)2342-2345
Number of pages4
JournalThin Solid Films
Volume518
Issue number9
DOIs
Publication statusPublished - Feb 26 2010

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films
  • Metals and Alloys
  • Materials Chemistry

Fingerprint Dive into the research topics of 'Defect control by Al deposition and the subsequent post-annealing for SiGe-on-insulator substrates with different Ge fractions'. Together they form a unique fingerprint.

Cite this