Defect evaluation by photoluminescence for uniaxially strained Si-On-insulator

Dong Wang, Keisuke Yamamoto, Hongye Gao, Haigui Yang, Hiroshi Nakashima

Research output: Contribution to journalArticle

Abstract

Uniaxial strain was introduced to Si-on-insulator (SOI) substrate by SiN deposition using electron cyclotron resonance sputtering combined with lift-off technique. The gate-opening surface with the uniaxial strain was passivated by SiO2 films, followed by optional thermal treatments. Strain-relaxation was observed by Raman spectroscopy for the thermally-treated samples. Photoluminescence (PL) was used to evaluate defects generated during strain-relaxation. Defect-related PL signal was observed for the thermally-treated strained channel. The intensity of defect signal positively depends on thermal treatment temperature and SiN thickness. Defect generation was investigated during strain relaxation.

Original languageEnglish
JournalJournal of the Electrochemical Society
Volume158
Issue number12
DOIs
Publication statusPublished - Nov 22 2011

Fingerprint

Strain relaxation
Photoluminescence
insulators
photoluminescence
Defects
axial strain
evaluation
defects
gates (openings)
Heat treatment
Electron cyclotron resonance
electron cyclotron resonance
Sputtering
Raman spectroscopy
sputtering
Substrates
Temperature
temperature

All Science Journal Classification (ASJC) codes

  • Electrochemistry
  • Electronic, Optical and Magnetic Materials
  • Materials Chemistry
  • Surfaces, Coatings and Films
  • Renewable Energy, Sustainability and the Environment
  • Condensed Matter Physics

Cite this

Defect evaluation by photoluminescence for uniaxially strained Si-On-insulator. / Wang, Dong; Yamamoto, Keisuke; Gao, Hongye; Yang, Haigui; Nakashima, Hiroshi.

In: Journal of the Electrochemical Society, Vol. 158, No. 12, 22.11.2011.

Research output: Contribution to journalArticle

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