Defect evaluation by photoluminescence for uniaxially strained Si-On-insulator

Dong Wang, Keisuke Yamamoto, Hongye Gao, Haigui Yang, Hiroshi Nakashima

Research output: Contribution to journalArticle

Abstract

Uniaxial strain was introduced to Si-on-insulator (SOI) substrate by SiN deposition using electron cyclotron resonance sputtering combined with lift-off technique. The gate-opening surface with the uniaxial strain was passivated by SiO2 films, followed by optional thermal treatments. Strain-relaxation was observed by Raman spectroscopy for the thermally-treated samples. Photoluminescence (PL) was used to evaluate defects generated during strain-relaxation. Defect-related PL signal was observed for the thermally-treated strained channel. The intensity of defect signal positively depends on thermal treatment temperature and SiN thickness. Defect generation was investigated during strain relaxation.

Original languageEnglish
Pages (from-to)H1221-H1224
JournalJournal of the Electrochemical Society
Volume158
Issue number12
DOIs
Publication statusPublished - Nov 22 2011

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Renewable Energy, Sustainability and the Environment
  • Surfaces, Coatings and Films
  • Electrochemistry
  • Materials Chemistry

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