Defect evaluation by photoluminescence for uniaxially strained Si-on-insulator

Dong Wang, Keisuke Yamamoto, Hongye Gao, Haigui Yang, Hiroshi Nakashima

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

Uniaxial strain was introduced to Si-on-insulator (SOI) substrate by SiN deposition using electron cyclotron resonance sputtering followed by gate-opening using lift-off technique. Then thermal treatments were performed at different temperatures. Strain-relaxation was observed by Raman spectroscopy. Photoluminescence (PL) was used to evaluate defects generated during strain-relaxation. Defect-related PL signal was observed for the thermally-treated strained channel. The intensity of defect-related PL signal increased with increasing annealing temperature. The energy position and profile of defect-related PL signal also varied with annealing temperature and SiN thickness.

Original languageEnglish
Title of host publicationChina Semiconductor Technology International Conference 2011, CSTIC 2011
Pages1117-1122
Number of pages6
Edition1
DOIs
Publication statusPublished - 2011
Event10th China Semiconductor Technology International Conference 2011, CSTIC 2011 - Shanghai, China
Duration: Mar 13 2011Mar 14 2011

Publication series

NameECS Transactions
Number1
Volume34
ISSN (Print)1938-5862
ISSN (Electronic)1938-6737

Other

Other10th China Semiconductor Technology International Conference 2011, CSTIC 2011
CountryChina
CityShanghai
Period3/13/113/14/11

All Science Journal Classification (ASJC) codes

  • Engineering(all)

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