Defect evaluation by photoluminescence for uniaxially strained Si-on-insulator

Dong Wang, Keisuke Yamamoto, Hongye Gao, Haigui Yang, Hiroshi Nakashima

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

Uniaxial strain was introduced to Si-on-insulator (SOI) substrate by SiN deposition using electron cyclotron resonance sputtering followed by gate-opening using lift-off technique. Then thermal treatments were performed at different temperatures. Strain-relaxation was observed by Raman spectroscopy. Photoluminescence (PL) was used to evaluate defects generated during strain-relaxation. Defect-related PL signal was observed for the thermally-treated strained channel. The intensity of defect-related PL signal increased with increasing annealing temperature. The energy position and profile of defect-related PL signal also varied with annealing temperature and SiN thickness.

Original languageEnglish
Title of host publicationChina Semiconductor Technology International Conference 2011, CSTIC 2011
Pages1117-1122
Number of pages6
Edition1
DOIs
Publication statusPublished - Jul 1 2011
Event10th China Semiconductor Technology International Conference 2011, CSTIC 2011 - Shanghai, China
Duration: Mar 13 2011Mar 14 2011

Publication series

NameECS Transactions
Number1
Volume34
ISSN (Print)1938-5862
ISSN (Electronic)1938-6737

Other

Other10th China Semiconductor Technology International Conference 2011, CSTIC 2011
CountryChina
CityShanghai
Period3/13/113/14/11

Fingerprint

Photoluminescence
Strain relaxation
Defects
Annealing
Electron cyclotron resonance
Temperature
Sputtering
Raman spectroscopy
Heat treatment
Substrates

All Science Journal Classification (ASJC) codes

  • Engineering(all)

Cite this

Wang, D., Yamamoto, K., Gao, H., Yang, H., & Nakashima, H. (2011). Defect evaluation by photoluminescence for uniaxially strained Si-on-insulator. In China Semiconductor Technology International Conference 2011, CSTIC 2011 (1 ed., pp. 1117-1122). (ECS Transactions; Vol. 34, No. 1). https://doi.org/10.1149/1.3567723

Defect evaluation by photoluminescence for uniaxially strained Si-on-insulator. / Wang, Dong; Yamamoto, Keisuke; Gao, Hongye; Yang, Haigui; Nakashima, Hiroshi.

China Semiconductor Technology International Conference 2011, CSTIC 2011. 1. ed. 2011. p. 1117-1122 (ECS Transactions; Vol. 34, No. 1).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Wang, D, Yamamoto, K, Gao, H, Yang, H & Nakashima, H 2011, Defect evaluation by photoluminescence for uniaxially strained Si-on-insulator. in China Semiconductor Technology International Conference 2011, CSTIC 2011. 1 edn, ECS Transactions, no. 1, vol. 34, pp. 1117-1122, 10th China Semiconductor Technology International Conference 2011, CSTIC 2011, Shanghai, China, 3/13/11. https://doi.org/10.1149/1.3567723
Wang D, Yamamoto K, Gao H, Yang H, Nakashima H. Defect evaluation by photoluminescence for uniaxially strained Si-on-insulator. In China Semiconductor Technology International Conference 2011, CSTIC 2011. 1 ed. 2011. p. 1117-1122. (ECS Transactions; 1). https://doi.org/10.1149/1.3567723
Wang, Dong ; Yamamoto, Keisuke ; Gao, Hongye ; Yang, Haigui ; Nakashima, Hiroshi. / Defect evaluation by photoluminescence for uniaxially strained Si-on-insulator. China Semiconductor Technology International Conference 2011, CSTIC 2011. 1. ed. 2011. pp. 1117-1122 (ECS Transactions; 1).
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