Defect-free Ge-on-insulator with (100), (110), and (111) orientations by growth-direction-selected rapid-melting growth

Kaoru Toko, Takanori Tanaka, Yasuharu Ohta, Taizoh Sadoh, Masanobu Miyao

Research output: Contribution to journalArticle

Abstract

Defect-free Ge-on-insulator (GOI) with various crystal orientations is essential to realize high-speed and multifunctional devices. Seeded rapid-melting growth of GOI is investigated as a function of seed-orientations and growth-directions. From (100)-oriented Si seeds, Ge growth with a (100) orientation propagates for all growth-directions, however, rotational-growth is observed for some directions when Si seeds with (110) and (111) orientations are used. Such rotational-growth can be completely suppressed by selecting the growth-directions deviating from (111) by more than 35°. Transmission-electron-microscopy observation shows no-stacking fault and no-dislocations. Consequently, defect-free GOI with (100), (110), and (111) orientation is achieved, which demonstrates high-hole mobility (~1100 cm2/V s).

Original languageEnglish
Pages (from-to)1040-1043
Number of pages4
JournalIEEE Transactions on Information Theory
Volume39
Issue number3
DOIs
Publication statusPublished - Jan 1 1993

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Melting
Defects
Seed
Hole mobility
Stacking faults
Dislocations (crystals)
Crystal orientation
Transmission electron microscopy

All Science Journal Classification (ASJC) codes

  • Information Systems
  • Computer Science Applications
  • Library and Information Sciences

Cite this

Defect-free Ge-on-insulator with (100), (110), and (111) orientations by growth-direction-selected rapid-melting growth. / Toko, Kaoru; Tanaka, Takanori; Ohta, Yasuharu; Sadoh, Taizoh; Miyao, Masanobu.

In: IEEE Transactions on Information Theory, Vol. 39, No. 3, 01.01.1993, p. 1040-1043.

Research output: Contribution to journalArticle

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