TY - JOUR
T1 - Defect-free Ge-on-insulator with (100), (110), and (111) orientations by growth-direction-selected rapid-melting growth
AU - Toko, Kaoru
AU - Tanaka, Takanori
AU - Ohta, Yasuharu
AU - Sadoh, Taizoh
AU - Miyao, Masanobu
N1 - Funding Information:
A part of this work was supported by Semiconductor Technology Academic Research Center (STARC) and a Grant-in-Aid for Scientific Research from the Ministry of Education, Culture, Sport, Science, and Technology in Japan. Valuable comments by Dr. I. Mizushima, Dr. N. Tamura, and Dr. M. Yoshimaru of STARC are greatly appreciated.
PY - 2010/10/11
Y1 - 2010/10/11
N2 - Defect-free Ge-on-insulator (GOI) with various crystal orientations is essential to realize high-speed and multifunctional devices. Seeded rapid-melting growth of GOI is investigated as a function of seed-orientations and growth-directions. From (100)-oriented Si seeds, Ge growth with a (100) orientation propagates for all growth-directions, however, rotational-growth is observed for some directions when Si seeds with (110) and (111) orientations are used. Such rotational-growth can be completely suppressed by selecting the growth-directions deviating from 〈 111 〉 by more than 35°. Transmission-electron-microscopy observation shows no-stacking fault and no-dislocations. Consequently, defect-free GOI with (100), (110), and (111) orientation is achieved, which demonstrates high-hole mobility (∼1100 cm2/V s).
AB - Defect-free Ge-on-insulator (GOI) with various crystal orientations is essential to realize high-speed and multifunctional devices. Seeded rapid-melting growth of GOI is investigated as a function of seed-orientations and growth-directions. From (100)-oriented Si seeds, Ge growth with a (100) orientation propagates for all growth-directions, however, rotational-growth is observed for some directions when Si seeds with (110) and (111) orientations are used. Such rotational-growth can be completely suppressed by selecting the growth-directions deviating from 〈 111 〉 by more than 35°. Transmission-electron-microscopy observation shows no-stacking fault and no-dislocations. Consequently, defect-free GOI with (100), (110), and (111) orientation is achieved, which demonstrates high-hole mobility (∼1100 cm2/V s).
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U2 - 10.1063/1.3493184
DO - 10.1063/1.3493184
M3 - Article
AN - SCOPUS:77958092558
SN - 0003-6951
VL - 97
JO - Applied Physics Letters
JF - Applied Physics Letters
IS - 15
M1 - 152101
ER -