Defect-Induced Deep Levels in SiGe-on-Insulator Substrate Fabricated using Ge Condensation Technique

H. Yang, D. Wang, H. Nakashima

Research output: Contribution to conferencePaperpeer-review

Original languageEnglish
Pages396-397
Number of pages2
DOIs
Publication statusPublished - Oct 8 2009
Event2009 International Conference on Solid State Devices and Materials (SSDM2009) - Sendai Kokusai Hotel, Miyagi, Japan
Duration: Oct 6 2009Oct 9 2009

Conference

Conference2009 International Conference on Solid State Devices and Materials (SSDM2009)
Country/TerritoryJapan
CityMiyagi
Period10/6/0910/9/09

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