Defect-Induced Deep Levels in SiGe-on-Insulator Substrate Fabricated using Ge Condensation Technique

H. Yang, D. Wang, H. Nakashima

Research output: Contribution to conference › Paper › peer-review

Original language	English
Pages	396-397
Number of pages	2
DOIs	https://doi.org/10.7567/ssdm.2009.p-3-10
Publication status	Published - Oct 8 2009
Event	2009 International Conference on Solid State Devices and Materials (SSDM2009) - Sendai Kokusai Hotel, Miyagi, Japan Duration: Oct 6 2009 → Oct 9 2009

Conference	2009 International Conference on Solid State Devices and Materials (SSDM2009)
Country/Territory	Japan
City	Miyagi
Period	10/6/09 → 10/9/09

Access to Document

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title = "Defect-Induced Deep Levels in SiGe-on-Insulator Substrate Fabricated using Ge Condensation Technique",

author = "H. Yang and D. Wang and H. Nakashima",

year = "2009",

month = oct,

day = "8",

doi = "10.7567/ssdm.2009.p-3-10",

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note = "2009 International Conference on Solid State Devices and Materials (SSDM2009) ; Conference date: 06-10-2009 Through 09-10-2009",

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T1 - Defect-Induced Deep Levels in SiGe-on-Insulator Substrate Fabricated using Ge Condensation Technique

AU - Yang, H.

AU - Wang, D.

AU - Nakashima, H.

PY - 2009/10/8

Y1 - 2009/10/8

U2 - 10.7567/ssdm.2009.p-3-10

DO - 10.7567/ssdm.2009.p-3-10

M3 - Paper

SP - 396

EP - 397

T2 - 2009 International Conference on Solid State Devices and Materials (SSDM2009)

Y2 - 6 October 2009 through 9 October 2009

ER -