Defect levels in BaMgAl10O17 and SrMgAl 10O17: Theoretical and experimental approach

H. Onuma, H. Tanno, R. Sahnoun, Michihisa Koyama, H. Tsuboi, N. Hatakeyama, A. Endou, H. Takaba, M. Kubo, C. A. Del Carpio, H. Kajiyama, T. Shinoda, A. Miyamoto

    Research output: Contribution to conferencePaperpeer-review

    Abstract

    In this study, we investigated the defect levels in the BaMgAl 10O17 and SrMgAl10O17 both theoretically and experimentally. The thermo-luminescence spectra showed the existences of the shallow and deep defect levels in the BaMgAl 10O17 and SrMgAl10O17 phosphors. The calculation results suggested that the structural defects such as oxygen vacancies would work as the trap for excited carrier. Moreover, the calculated binding energies and the formation energies of an oxygen vacancy suggest that the SrMgA10O17 and conduction plane can be degradated.

    Original languageEnglish
    Pages2143-2146
    Number of pages4
    Publication statusPublished - Dec 1 2007
    Event14th International Display Workshops, IDW '07 - Sapporo, Japan
    Duration: Dec 5 2007Dec 5 2007

    Other

    Other14th International Display Workshops, IDW '07
    Country/TerritoryJapan
    CitySapporo
    Period12/5/0712/5/07

    All Science Journal Classification (ASJC) codes

    • Electrical and Electronic Engineering
    • Electronic, Optical and Magnetic Materials
    • Radiology Nuclear Medicine and imaging
    • Atomic and Molecular Physics, and Optics

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