TY - JOUR
T1 - Deformation and improvement of the ir transmission of single-crystal silicon by direct current heating
AU - Miura, Kiyotaka
AU - Shimotsuma, Yasuhiko
AU - Sakakura, Masaaki
AU - Gunji, Shunsuke
AU - Sakamoto, Taiki
AU - Morishita, Kohei
AU - Hachinohe, Satoru
N1 - Copyright:
Copyright 2017 Elsevier B.V., All rights reserved.
PY - 2017
Y1 - 2017
N2 - We confirmed that the deformation occurred at about 800 °C when CZ-Si was pressure and heat treated by a pulse-heating- method, spark plasma sintering (SPS), while at the same time, the absorption peak of silicon single crystal produced using the Czochralski process (CZ-Si), which was a major issue for infrared transparent material in the vicinity of 9 μm, was also confirmed to have been reduced within a short time. The absorption coefficient in the vicinity of 9 μm, which was derived from the interstitial oxygen, decreased the most at 800 °C, and the absorption derived from the stretching mode of Si-O observed in the vicinity of 9.7 μm reached its maximum at 800 °C. This is considered to have been due to the migration of interstitial oxygen via clusters to change the material into amorphous SiO2. It was confirmed that the impact of the applied pressure direction was relative to crystal orientation on the peak of 9 μm. It was also found that the deformation was the maximum from the (110) plane, that the change in absorption coefficients before and after deformation was the largest, and that the relationship turned out to be (110)> (100)> (111). The dislocation lines in the sample after the deformation of the (100) plane were observed using EBSD, and the polarization dependencies of transmittance in the infrared region were measured for the planes parallel and perpendicular to the applied pressure.
AB - We confirmed that the deformation occurred at about 800 °C when CZ-Si was pressure and heat treated by a pulse-heating- method, spark plasma sintering (SPS), while at the same time, the absorption peak of silicon single crystal produced using the Czochralski process (CZ-Si), which was a major issue for infrared transparent material in the vicinity of 9 μm, was also confirmed to have been reduced within a short time. The absorption coefficient in the vicinity of 9 μm, which was derived from the interstitial oxygen, decreased the most at 800 °C, and the absorption derived from the stretching mode of Si-O observed in the vicinity of 9.7 μm reached its maximum at 800 °C. This is considered to have been due to the migration of interstitial oxygen via clusters to change the material into amorphous SiO2. It was confirmed that the impact of the applied pressure direction was relative to crystal orientation on the peak of 9 μm. It was also found that the deformation was the maximum from the (110) plane, that the change in absorption coefficients before and after deformation was the largest, and that the relationship turned out to be (110)> (100)> (111). The dislocation lines in the sample after the deformation of the (100) plane were observed using EBSD, and the polarization dependencies of transmittance in the infrared region were measured for the planes parallel and perpendicular to the applied pressure.
UR - http://www.scopus.com/inward/record.url?scp=85020698816&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=85020698816&partnerID=8YFLogxK
U2 - 10.17222/mit.2016.158
DO - 10.17222/mit.2016.158
M3 - Article
AN - SCOPUS:85020698816
VL - 51
SP - 493
EP - 497
JO - Materiali in Tehnologije
JF - Materiali in Tehnologije
SN - 1580-2949
IS - 3
ER -