The degradation behavior of 2-μm wavelength distributed feedback lasers with a p- and n-type InP buried heterostructure during constant-power aging is investigated. The degradation mechanism is governed by diffused defects with a parallel direction in the crystal plane. Furthermore, it is clarified that the epitaxial layers on the mesa affect both first- and second-stage degradations.
|Number of pages||6|
|Journal||IEEE Transactions on Electron Devices|
|Publication status||Published - Oct 1 2007|
All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Electrical and Electronic Engineering