Degradation analysis of 2-μm DFB laser using optical beam-induced current technique

Tatsuya Takeshita; Tomonari Sato; Manabu Mitsuhara; Yasuhiro Kondo; Mitsuru Sugo; Kazutoshi Kato

doi:10.1109/TED.2007.904961

Degradation analysis of 2-μm DFB laser using optical beam-induced current technique

Tatsuya Takeshita, Tomonari Sato, Manabu Mitsuhara, Yasuhiro Kondo, Mitsuru Sugo, Kazutoshi Kato

Research output: Contribution to journal › Article › peer-review

4 Citations (Scopus)

Abstract

The degradation behavior of 2-μm wavelength distributed feedback lasers with a p- and n-type InP buried heterostructure during constant-power aging is investigated. The degradation mechanism is governed by diffused defects with a parallel direction in the crystal plane. Furthermore, it is clarified that the epitaxial layers on the mesa affect both first- and second-stage degradations.

Original language	English
Pages (from-to)	2644-2649
Number of pages	6
Journal	IEEE Transactions on Electron Devices
Volume	54
Issue number	10
DOIs	https://doi.org/10.1109/TED.2007.904961
Publication status	Published - Oct 1 2007
Externally published	Yes

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Electrical and Electronic Engineering

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10.1109/TED.2007.904961

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abstract = "The degradation behavior of 2-μm wavelength distributed feedback lasers with a p- and n-type InP buried heterostructure during constant-power aging is investigated. The degradation mechanism is governed by diffused defects with a parallel direction in the crystal plane. Furthermore, it is clarified that the epitaxial layers on the mesa affect both first- and second-stage degradations.",

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AU - Takeshita, Tatsuya

AU - Sato, Tomonari

AU - Mitsuhara, Manabu

AU - Kondo, Yasuhiro

AU - Sugo, Mitsuru

AU - Kato, Kazutoshi

PY - 2007/10/1

Y1 - 2007/10/1

N2 - The degradation behavior of 2-μm wavelength distributed feedback lasers with a p- and n-type InP buried heterostructure during constant-power aging is investigated. The degradation mechanism is governed by diffused defects with a parallel direction in the crystal plane. Furthermore, it is clarified that the epitaxial layers on the mesa affect both first- and second-stage degradations.

AB - The degradation behavior of 2-μm wavelength distributed feedback lasers with a p- and n-type InP buried heterostructure during constant-power aging is investigated. The degradation mechanism is governed by diffused defects with a parallel direction in the crystal plane. Furthermore, it is clarified that the epitaxial layers on the mesa affect both first- and second-stage degradations.

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M3 - Article

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JO - IEEE Transactions on Electron Devices

JF - IEEE Transactions on Electron Devices

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ER -

Degradation analysis of 2-μm DFB laser using optical beam-induced current technique

Abstract

All Science Journal Classification (ASJC) codes

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