Dehydration after plasma oxidation of porous low-dielectric-constant spin-on-glass films

Eiichi Kondoh, Tanemasa Asano, Hiroki Arao, Akira Nakashima, Michio Komatsu

Research output: Contribution to journalArticle

25 Citations (Scopus)

Abstract

In this paper, the dehydration behavior of hydrogen-methyl-siloxane-based porous spin-on-glass (SOG) films after oxygen plasma exposure is reported. The resultant loss of hydrophobia groups from the plasma exposure makes the films hygroscopic and thus the film dielectric constant can significantly increase. We employed a simple method consisting of spin-on coating of hexadimethyldisilazane (HMDS) with successive hotplate baking so as to dehydrate the films and decrease the film dielectric constant.

Original languageEnglish
Pages (from-to)3919-3923
Number of pages5
JournalJapanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes
Volume39
Issue number7 A
Publication statusPublished - 2000
Externally publishedYes

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Dehydration
dehydration
Permittivity
permittivity
Plasmas
Glass
Oxidation
oxidation
glass
baking
siloxanes
oxygen plasma
coatings
Coatings
Hydrogen
Oxygen
hydrogen

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)
  • Engineering(all)

Cite this

Dehydration after plasma oxidation of porous low-dielectric-constant spin-on-glass films. / Kondoh, Eiichi; Asano, Tanemasa; Arao, Hiroki; Nakashima, Akira; Komatsu, Michio.

In: Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes, Vol. 39, No. 7 A, 2000, p. 3919-3923.

Research output: Contribution to journalArticle

Kondoh, Eiichi ; Asano, Tanemasa ; Arao, Hiroki ; Nakashima, Akira ; Komatsu, Michio. / Dehydration after plasma oxidation of porous low-dielectric-constant spin-on-glass films. In: Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes. 2000 ; Vol. 39, No. 7 A. pp. 3919-3923.
@article{fde6e8def79845d39da1dcc034cbc087,
title = "Dehydration after plasma oxidation of porous low-dielectric-constant spin-on-glass films",
abstract = "In this paper, the dehydration behavior of hydrogen-methyl-siloxane-based porous spin-on-glass (SOG) films after oxygen plasma exposure is reported. The resultant loss of hydrophobia groups from the plasma exposure makes the films hygroscopic and thus the film dielectric constant can significantly increase. We employed a simple method consisting of spin-on coating of hexadimethyldisilazane (HMDS) with successive hotplate baking so as to dehydrate the films and decrease the film dielectric constant.",
author = "Eiichi Kondoh and Tanemasa Asano and Hiroki Arao and Akira Nakashima and Michio Komatsu",
year = "2000",
language = "English",
volume = "39",
pages = "3919--3923",
journal = "Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes",
issn = "0021-4922",
publisher = "Institute of Physics",
number = "7 A",

}

TY - JOUR

T1 - Dehydration after plasma oxidation of porous low-dielectric-constant spin-on-glass films

AU - Kondoh, Eiichi

AU - Asano, Tanemasa

AU - Arao, Hiroki

AU - Nakashima, Akira

AU - Komatsu, Michio

PY - 2000

Y1 - 2000

N2 - In this paper, the dehydration behavior of hydrogen-methyl-siloxane-based porous spin-on-glass (SOG) films after oxygen plasma exposure is reported. The resultant loss of hydrophobia groups from the plasma exposure makes the films hygroscopic and thus the film dielectric constant can significantly increase. We employed a simple method consisting of spin-on coating of hexadimethyldisilazane (HMDS) with successive hotplate baking so as to dehydrate the films and decrease the film dielectric constant.

AB - In this paper, the dehydration behavior of hydrogen-methyl-siloxane-based porous spin-on-glass (SOG) films after oxygen plasma exposure is reported. The resultant loss of hydrophobia groups from the plasma exposure makes the films hygroscopic and thus the film dielectric constant can significantly increase. We employed a simple method consisting of spin-on coating of hexadimethyldisilazane (HMDS) with successive hotplate baking so as to dehydrate the films and decrease the film dielectric constant.

UR - http://www.scopus.com/inward/record.url?scp=0034215919&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0034215919&partnerID=8YFLogxK

M3 - Article

VL - 39

SP - 3919

EP - 3923

JO - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes

JF - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes

SN - 0021-4922

IS - 7 A

ER -