Demonstration of 1200V Scaled IGBTs Driven by 5V Gate Voltage with Superiorly Low Switching Loss

T. Saraya; K. Itou; T. Takakura; M. Fukui; S. Suzuki; K. Takeuchi; M. Tsukuda; Y. Numasawa; K. Satoh; T. Matsudai; W. Saito; K. Kakushima; T. Hoshii; K. Furukawa; M. Watanabe; N. Shigyo; K. Tsutsui; H. Iwai; A. Ogura; S. Nishizawa; I. Omura; H. Ohashi; T. Hiramoto

doi:10.1109/IEDM.2018.8614491

Demonstration of 1200V Scaled IGBTs Driven by 5V Gate Voltage with Superiorly Low Switching Loss

T. Saraya, K. Itou, T. Takakura, M. Fukui, S. Suzuki, K. Takeuchi, M. Tsukuda, Y. Numasawa, K. Satoh, T. Matsudai, W. Saito, K. Kakushima, T. Hoshii, K. Furukawa, M. Watanabe, N. Shigyo, K. Tsutsui, H. Iwai, A. Ogura, S. NishizawaI. Omura, H. Ohashi, T. Hiramoto

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

13 Citations (Scopus)

Abstract

Functional trench-gated 1200V-10A class Si-IGBTs, designed based on a three dimensional (3D) scaling concept, were fabricated, and 5V gate voltage switching operation has been demonstrated for the first time. 33% reduction of turn-off loss and 100mV improvement of on-state voltage were achieved, while keeping 1.2kV forward blocking voltage.

Original language	English
Title of host publication	2018 IEEE International Electron Devices Meeting, IEDM 2018
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	8.4.1-8.4.4
ISBN (Electronic)	9781728119878
DOIs	https://doi.org/10.1109/IEDM.2018.8614491
Publication status	Published - Jan 16 2019
Externally published	Yes
Event	64th Annual IEEE International Electron Devices Meeting, IEDM 2018 - San Francisco, United States Duration: Dec 1 2018 → Dec 5 2018

Publication series

Name	Technical Digest - International Electron Devices Meeting, IEDM
Volume	2018-December
ISSN (Print)	0163-1918

Conference

Conference	64th Annual IEEE International Electron Devices Meeting, IEDM 2018
Country/Territory	United States
City	San Francisco
Period	12/1/18 → 12/5/18

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Electrical and Electronic Engineering
Materials Chemistry

Access to Document

10.1109/IEDM.2018.8614491

Cite this

Saraya, T., Itou, K., Takakura, T., Fukui, M., Suzuki, S., Takeuchi, K., Tsukuda, M., Numasawa, Y., Satoh, K., Matsudai, T., Saito, W., Kakushima, K., Hoshii, T., Furukawa, K., Watanabe, M., Shigyo, N., Tsutsui, K., Iwai, H., Ogura, A., ... Hiramoto, T. (2019). Demonstration of 1200V Scaled IGBTs Driven by 5V Gate Voltage with Superiorly Low Switching Loss. In 2018 IEEE International Electron Devices Meeting, IEDM 2018 (pp. 8.4.1-8.4.4). [8614491] (Technical Digest - International Electron Devices Meeting, IEDM; Vol. 2018-December). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/IEDM.2018.8614491

Demonstration of 1200V Scaled IGBTs Driven by 5V Gate Voltage with Superiorly Low Switching Loss. / Saraya, T.; Itou, K.; Takakura, T. et al.

2018 IEEE International Electron Devices Meeting, IEDM 2018. Institute of Electrical and Electronics Engineers Inc., 2019. p. 8.4.1-8.4.4 8614491 (Technical Digest - International Electron Devices Meeting, IEDM; Vol. 2018-December).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Saraya, T, Itou, K, Takakura, T, Fukui, M, Suzuki, S, Takeuchi, K, Tsukuda, M, Numasawa, Y, Satoh, K, Matsudai, T, Saito, W, Kakushima, K, Hoshii, T, Furukawa, K, Watanabe, M, Shigyo, N, Tsutsui, K, Iwai, H, Ogura, A, Nishizawa, S, Omura, I, Ohashi, H & Hiramoto, T 2019, Demonstration of 1200V Scaled IGBTs Driven by 5V Gate Voltage with Superiorly Low Switching Loss. in 2018 IEEE International Electron Devices Meeting, IEDM 2018., 8614491, Technical Digest - International Electron Devices Meeting, IEDM, vol. 2018-December, Institute of Electrical and Electronics Engineers Inc., pp. 8.4.1-8.4.4, 64th Annual IEEE International Electron Devices Meeting, IEDM 2018, San Francisco, United States, 12/1/18. https://doi.org/10.1109/IEDM.2018.8614491

Saraya T, Itou K, Takakura T, Fukui M, Suzuki S, Takeuchi K et al. Demonstration of 1200V Scaled IGBTs Driven by 5V Gate Voltage with Superiorly Low Switching Loss. In 2018 IEEE International Electron Devices Meeting, IEDM 2018. Institute of Electrical and Electronics Engineers Inc. 2019. p. 8.4.1-8.4.4. 8614491. (Technical Digest - International Electron Devices Meeting, IEDM). doi: 10.1109/IEDM.2018.8614491

@inproceedings{40c20f746a654ea593186ffba2576342,

title = "Demonstration of 1200V Scaled IGBTs Driven by 5V Gate Voltage with Superiorly Low Switching Loss",

abstract = "Functional trench-gated 1200V-10A class Si-IGBTs, designed based on a three dimensional (3D) scaling concept, were fabricated, and 5V gate voltage switching operation has been demonstrated for the first time. 33% reduction of turn-off loss and 100mV improvement of on-state voltage were achieved, while keeping 1.2kV forward blocking voltage.",

author = "T. Saraya and K. Itou and T. Takakura and M. Fukui and S. Suzuki and K. Takeuchi and M. Tsukuda and Y. Numasawa and K. Satoh and T. Matsudai and W. Saito and K. Kakushima and T. Hoshii and K. Furukawa and M. Watanabe and N. Shigyo and K. Tsutsui and H. Iwai and A. Ogura and S. Nishizawa and I. Omura and H. Ohashi and T. Hiramoto",

note = "Publisher Copyright: {\textcopyright} 2018 IEEE.; 64th Annual IEEE International Electron Devices Meeting, IEDM 2018 ; Conference date: 01-12-2018 Through 05-12-2018",

year = "2019",

month = jan,

day = "16",

doi = "10.1109/IEDM.2018.8614491",

language = "English",

series = "Technical Digest - International Electron Devices Meeting, IEDM",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

pages = "8.4.1--8.4.4",

booktitle = "2018 IEEE International Electron Devices Meeting, IEDM 2018",

address = "United States",

}

TY - GEN

T1 - Demonstration of 1200V Scaled IGBTs Driven by 5V Gate Voltage with Superiorly Low Switching Loss

AU - Saraya, T.

AU - Itou, K.

AU - Takakura, T.

AU - Fukui, M.

AU - Suzuki, S.

AU - Takeuchi, K.

AU - Tsukuda, M.

AU - Numasawa, Y.

AU - Satoh, K.

AU - Matsudai, T.

AU - Saito, W.

AU - Kakushima, K.

AU - Hoshii, T.

AU - Furukawa, K.

AU - Watanabe, M.

AU - Shigyo, N.

AU - Tsutsui, K.

AU - Iwai, H.

AU - Ogura, A.

AU - Nishizawa, S.

AU - Omura, I.

AU - Ohashi, H.

AU - Hiramoto, T.

PY - 2019/1/16

Y1 - 2019/1/16

N2 - Functional trench-gated 1200V-10A class Si-IGBTs, designed based on a three dimensional (3D) scaling concept, were fabricated, and 5V gate voltage switching operation has been demonstrated for the first time. 33% reduction of turn-off loss and 100mV improvement of on-state voltage were achieved, while keeping 1.2kV forward blocking voltage.

AB - Functional trench-gated 1200V-10A class Si-IGBTs, designed based on a three dimensional (3D) scaling concept, were fabricated, and 5V gate voltage switching operation has been demonstrated for the first time. 33% reduction of turn-off loss and 100mV improvement of on-state voltage were achieved, while keeping 1.2kV forward blocking voltage.

UR - http://www.scopus.com/inward/record.url?scp=85061837133&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=85061837133&partnerID=8YFLogxK

U2 - 10.1109/IEDM.2018.8614491

DO - 10.1109/IEDM.2018.8614491

M3 - Conference contribution

AN - SCOPUS:85061837133

T3 - Technical Digest - International Electron Devices Meeting, IEDM

SP - 8.4.1-8.4.4

BT - 2018 IEEE International Electron Devices Meeting, IEDM 2018

PB - Institute of Electrical and Electronics Engineers Inc.

T2 - 64th Annual IEEE International Electron Devices Meeting, IEDM 2018

Y2 - 1 December 2018 through 5 December 2018

ER -

Demonstration of 1200V Scaled IGBTs Driven by 5V Gate Voltage with Superiorly Low Switching Loss

Abstract

Publication series

Conference

All Science Journal Classification (ASJC) codes

Access to Document

Other files and links

Fingerprint

Cite this