Demonstration of 1200V Scaled IGBTs Driven by 5V Gate Voltage with Superiorly Low Switching Loss

T. Saraya, K. Itou, T. Takakura, M. Fukui, S. Suzuki, K. Takeuchi, M. Tsukuda, Y. Numasawa, K. Satoh, T. Matsudai, W. Saito, K. Kakushima, T. Hoshii, K. Furukawa, M. Watanabe, N. Shigyo, K. Tsutsui, H. Iwai, A. Ogura, Shinichi Nishizawa & 3 others I. Omura, H. Ohashi, T. Hiramoto

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

Functional trench-gated 1200V-10A class Si-IGBTs, designed based on a three dimensional (3D) scaling concept, were fabricated, and 5V gate voltage switching operation has been demonstrated for the first time. 33% reduction of turn-off loss and 100mV improvement of on-state voltage were achieved, while keeping 1.2kV forward blocking voltage.

Original languageEnglish
Title of host publication2018 IEEE International Electron Devices Meeting, IEDM 2018
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages8.4.1-8.4.4
ISBN (Electronic)9781728119878
DOIs
Publication statusPublished - Jan 16 2019
Externally publishedYes
Event64th Annual IEEE International Electron Devices Meeting, IEDM 2018 - San Francisco, United States
Duration: Dec 1 2018Dec 5 2018

Publication series

NameTechnical Digest - International Electron Devices Meeting, IEDM
Volume2018-December
ISSN (Print)0163-1918

Conference

Conference64th Annual IEEE International Electron Devices Meeting, IEDM 2018
CountryUnited States
CitySan Francisco
Period12/1/1812/5/18

Fingerprint

Insulated gate bipolar transistors (IGBT)
Demonstrations
Electric potential
electric potential
scaling

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry

Cite this

Saraya, T., Itou, K., Takakura, T., Fukui, M., Suzuki, S., Takeuchi, K., ... Hiramoto, T. (2019). Demonstration of 1200V Scaled IGBTs Driven by 5V Gate Voltage with Superiorly Low Switching Loss. In 2018 IEEE International Electron Devices Meeting, IEDM 2018 (pp. 8.4.1-8.4.4). [8614491] (Technical Digest - International Electron Devices Meeting, IEDM; Vol. 2018-December). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/IEDM.2018.8614491

Demonstration of 1200V Scaled IGBTs Driven by 5V Gate Voltage with Superiorly Low Switching Loss. / Saraya, T.; Itou, K.; Takakura, T.; Fukui, M.; Suzuki, S.; Takeuchi, K.; Tsukuda, M.; Numasawa, Y.; Satoh, K.; Matsudai, T.; Saito, W.; Kakushima, K.; Hoshii, T.; Furukawa, K.; Watanabe, M.; Shigyo, N.; Tsutsui, K.; Iwai, H.; Ogura, A.; Nishizawa, Shinichi; Omura, I.; Ohashi, H.; Hiramoto, T.

2018 IEEE International Electron Devices Meeting, IEDM 2018. Institute of Electrical and Electronics Engineers Inc., 2019. p. 8.4.1-8.4.4 8614491 (Technical Digest - International Electron Devices Meeting, IEDM; Vol. 2018-December).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Saraya, T, Itou, K, Takakura, T, Fukui, M, Suzuki, S, Takeuchi, K, Tsukuda, M, Numasawa, Y, Satoh, K, Matsudai, T, Saito, W, Kakushima, K, Hoshii, T, Furukawa, K, Watanabe, M, Shigyo, N, Tsutsui, K, Iwai, H, Ogura, A, Nishizawa, S, Omura, I, Ohashi, H & Hiramoto, T 2019, Demonstration of 1200V Scaled IGBTs Driven by 5V Gate Voltage with Superiorly Low Switching Loss. in 2018 IEEE International Electron Devices Meeting, IEDM 2018., 8614491, Technical Digest - International Electron Devices Meeting, IEDM, vol. 2018-December, Institute of Electrical and Electronics Engineers Inc., pp. 8.4.1-8.4.4, 64th Annual IEEE International Electron Devices Meeting, IEDM 2018, San Francisco, United States, 12/1/18. https://doi.org/10.1109/IEDM.2018.8614491
Saraya T, Itou K, Takakura T, Fukui M, Suzuki S, Takeuchi K et al. Demonstration of 1200V Scaled IGBTs Driven by 5V Gate Voltage with Superiorly Low Switching Loss. In 2018 IEEE International Electron Devices Meeting, IEDM 2018. Institute of Electrical and Electronics Engineers Inc. 2019. p. 8.4.1-8.4.4. 8614491. (Technical Digest - International Electron Devices Meeting, IEDM). https://doi.org/10.1109/IEDM.2018.8614491
Saraya, T. ; Itou, K. ; Takakura, T. ; Fukui, M. ; Suzuki, S. ; Takeuchi, K. ; Tsukuda, M. ; Numasawa, Y. ; Satoh, K. ; Matsudai, T. ; Saito, W. ; Kakushima, K. ; Hoshii, T. ; Furukawa, K. ; Watanabe, M. ; Shigyo, N. ; Tsutsui, K. ; Iwai, H. ; Ogura, A. ; Nishizawa, Shinichi ; Omura, I. ; Ohashi, H. ; Hiramoto, T. / Demonstration of 1200V Scaled IGBTs Driven by 5V Gate Voltage with Superiorly Low Switching Loss. 2018 IEEE International Electron Devices Meeting, IEDM 2018. Institute of Electrical and Electronics Engineers Inc., 2019. pp. 8.4.1-8.4.4 (Technical Digest - International Electron Devices Meeting, IEDM).
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