Demonstration of 13.56-MHz class-E amplifier using a high-voltage GaN power-HEMT

Wataru Saito, Tomokazu Domon, Ichiro Omura, Masahiko Kuraguchi, Yoshiharu Takada, Kunio Tsuda, Masakazu Yamaguchi

Research output: Contribution to journalArticle

48 Citations (Scopus)

Abstract

A 13.56-MHz class-E amplifier with a high-voltage GaN HEMT as the main switching device is demonstrated to show the possibility of using GaN HEMTs in high-frequency switching power applications such as RF power-supply applications. The 380-V/1.9-A GaN power HEMT was designed and fabricated for high-voltage power-electronics applications. The demonstrated circuit achieved the output power of 13.4 W and the power efficiency of 91% under a drain-peak voltage as high as 330 V. This result shows that high-voltage GaN devices are suitable for high-frequency switching applications under high dc input voltages of over 100 V.

Original languageEnglish
Pages (from-to)326-328
Number of pages3
JournalIEEE Electron Device Letters
Volume27
Issue number5
DOIs
Publication statusPublished - May 1 2006
Externally publishedYes

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

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    Saito, W., Domon, T., Omura, I., Kuraguchi, M., Takada, Y., Tsuda, K., & Yamaguchi, M. (2006). Demonstration of 13.56-MHz class-E amplifier using a high-voltage GaN power-HEMT. IEEE Electron Device Letters, 27(5), 326-328. https://doi.org/10.1109/LED.2006.873756