In this study, a GaN/LiNbO3 hybrid wafer was demonstrated using roomerature bonding based on a surface activated bonding (SAB) method. The SAB using Fe-containing Ar ion beam bombardment achieved a strong bond between GaN and LiNbO3 wafers. The bonded wafer made using the modified SAB method was successfully cut into 1 1 mm2 dies using a dicing saw without interfacial debonding, and the measured tensile strength was estimated to be greater than approximately 26 MPa. These results show the presence of a strong bond that may be sufficient for device applications. In addition, TEM observation clearly indicated that the Fe-containing nanolayer deposited during ion beam bombardment appears to work well as an adhesive and form a strong bond between the negative surface of LiNbO3 and Ga-face of GaN. These results show the potential of this roomerature bonding method to achieve a future GaN/LiNbO3 hybrid platform that can fully exploit the unique properties of each material.
All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials