Demonstration of GaN/LiNbO3 Hybrid Wafer Using Room-Temperature Surface Activated Bonding

Ryo Takigawa, Takashi Matsumae, Michitaka Yamamoto, Eiji Higurashi, Tanemasa Asano, Haruichi Kanaya

Research output: Contribution to journalArticle

Abstract

In this study, a GaN/LiNbO3 hybrid wafer was demonstrated using roomerature bonding based on a surface activated bonding (SAB) method. The SAB using Fe-containing Ar ion beam bombardment achieved a strong bond between GaN and LiNbO3 wafers. The bonded wafer made using the modified SAB method was successfully cut into 1 1 mm2 dies using a dicing saw without interfacial debonding, and the measured tensile strength was estimated to be greater than approximately 26 MPa. These results show the presence of a strong bond that may be sufficient for device applications. In addition, TEM observation clearly indicated that the Fe-containing nanolayer deposited during ion beam bombardment appears to work well as an adhesive and form a strong bond between the negative surface of LiNbO3 and Ga-face of GaN. These results show the potential of this roomerature bonding method to achieve a future GaN/LiNbO3 hybrid platform that can fully exploit the unique properties of each material.

Original languageEnglish
Article number045005
JournalECS Journal of Solid State Science and Technology
Volume9
Issue number4
DOIs
Publication statusPublished - Jan 5 2020

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials

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