Demonstration of high output power density (50 W/cc) converter using 600 v SJ-MOSFET and SiC-SBD

Masanori Tsukuda, Ichiro Omura, Wataru Saito, Tomokazu Domon

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

This paper reports on the possibility of a high output power density converter and, for that purpose, refers to a demonstration of a small-volume DC-DC down converter using a 600 V Superjunction MOSFET (SJ-MOSFET) and a silicon carbide Schottky barrier diode (SiC-SBD). The output power density of the demonstrated DC-DC down converter was 50 W Icc, which is the target for the year 2018 (Fig. 1).

Original languageEnglish
Title of host publication2006 4th International Conference on Integrated Power Systems, CIPS 2006
PublisherInstitute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)9783800729722
Publication statusPublished - Jan 1 2006
Externally publishedYes
Event4th International Conference on Integrated Power Systems, CIPS 2006 - Naples, Italy
Duration: Jun 7 2006Jun 9 2006

Publication series

Name2006 4th International Conference on Integrated Power Systems, CIPS 2006

Conference

Conference4th International Conference on Integrated Power Systems, CIPS 2006
CountryItaly
CityNaples
Period6/7/066/9/06

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All Science Journal Classification (ASJC) codes

  • Electrical and Electronic Engineering
  • Energy Engineering and Power Technology
  • Industrial and Manufacturing Engineering
  • Electronic, Optical and Magnetic Materials

Cite this

Tsukuda, M., Omura, I., Saito, W., & Domon, T. (2006). Demonstration of high output power density (50 W/cc) converter using 600 v SJ-MOSFET and SiC-SBD. In 2006 4th International Conference on Integrated Power Systems, CIPS 2006 [5758045] (2006 4th International Conference on Integrated Power Systems, CIPS 2006). Institute of Electrical and Electronics Engineers Inc..