Demonstration of motor drive with SiC normally-off IEMOSFET/ SBD power converter

S. Harada, Y. Hayashi, K. Takao, A. Kinoshita, M. Kato, M. Okamoto, T. Kato, S. Nishizawa, T. Yatsuo, K. Fukuda, H. Ohashi, K. Arai

Research output: Chapter in Book/Report/Conference proceedingConference contribution

14 Citations (Scopus)

Abstract

Normally-off power MOSFET with low Rons has been developed. IEMOSFET on 4H-SiC carbon-face wafer exhibits an extremely low Rons of 1.8 mωcm2 with a blocking voltage of 660 V. The effective channel mobility of this device is 90 cm2/Vs which corresponds to the channel resistance of 0.8 mωcm2. A step-down converter was fabricated with the normally-off IEMOSFET and SBD, and the operation of 400 W DC motor drive was successfully observed at room temperature.

Original languageEnglish
Title of host publicationProceedings of 19th International Symposium on Power Semiconductor Devices and ICs, ISPSD'07
Pages289-292
Number of pages4
DOIs
Publication statusPublished - Dec 1 2007
Externally publishedYes
Event19th International Symposium on Power Semiconductor Devices and ICs, ISPSD'07 - Jeju Island, Korea, Republic of
Duration: May 27 2007May 31 2007

Publication series

NameProceedings of the International Symposium on Power Semiconductor Devices and ICs
ISSN (Print)1063-6854

Other

Other19th International Symposium on Power Semiconductor Devices and ICs, ISPSD'07
CountryKorea, Republic of
CityJeju Island
Period5/27/075/31/07

All Science Journal Classification (ASJC) codes

  • Engineering(all)

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