Demonstration of n-MOSFET operation and internal charge analysis of SiO2/Al2O3 gate dielectric on (111) oriented 3C-SiC

R. Oka, K. Yamamoto, Dong Wang, H. Nakashima, S. Hishiki, K. Kawamura

Research output: Contribution to conferencePaperpeer-review

Original languageEnglish
Pages777-778
Number of pages2
DOIs
Publication statusPublished - Sep 2019
Event2019 International Conference on Solid State Devices and Materials (SSDM2019) - Nagoya University, Nagoya, Japan
Duration: Sep 2 2019Sep 5 2019

Conference

Conference2019 International Conference on Solid State Devices and Materials (SSDM2019)
Country/TerritoryJapan
CityNagoya
Period9/2/199/5/19

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