TY - JOUR
T1 - Densities and Surface Reaction Probabilities of Oxygen and Nitrogen Atoms during Sputter Deposition of ZnInON on ZnO
AU - Matsushima, Koichi
AU - Ide, Tomoaki
AU - Takeda, Keigo
AU - Hori, Masaru
AU - Yamashita, Daisuke
AU - Seo, Hyunwoong
AU - Koga, Kazunori
AU - Shiratani, Masaharu
AU - Itagaki, Naho
N1 - Funding Information:
This work was supported in part by the Japan Society for the Promotion of Science (JSPS) Grant-in-Aid for Scientific Research under Grant 15H05431and in part by the Grant-in-Aid for JSPS Fellows 26005011.
PY - 2017/2
Y1 - 2017/2
N2 - We report densities and surface reaction probabilities of O and N atoms during sputter deposition of ZnInON films on ZnO templates, measured via vacuum ultraviolet absorption spectroscopy. O density is almost constant of 4.5 × 1011 cm-3 irrespective of O2 gas flow rate, whereas N density increases sharply from 2.7 × 1011 cm-3 for O2 gas sccm to 7.7 × 1011 cm-3 for 0.6 sccm and it increases gradually 1011 cm-3 for 5 sccm. The surface reaction probability βO of O atoms on ZnInON increases significantly from 0.022 to 0.404 with increasing O2 gas flow rate from 0 to 5 sccm, whereas βN of N atoms on ZnInON decreases slightly from 0.018 to 0.006. The stoichiometric chemical compositional ratio of ZnInON films with [Zn]/([Zn] + [In]) = [O]/([O] + [N]) = 94% is obtained at βO=0.404 of O atoms. This stoichiometric compositional ZnInON films grow coherently on ZnO templates, while nonstoichiometric films do not. The stoichiometric chemical composition is the key to coherent growth of ZnInON films.
AB - We report densities and surface reaction probabilities of O and N atoms during sputter deposition of ZnInON films on ZnO templates, measured via vacuum ultraviolet absorption spectroscopy. O density is almost constant of 4.5 × 1011 cm-3 irrespective of O2 gas flow rate, whereas N density increases sharply from 2.7 × 1011 cm-3 for O2 gas sccm to 7.7 × 1011 cm-3 for 0.6 sccm and it increases gradually 1011 cm-3 for 5 sccm. The surface reaction probability βO of O atoms on ZnInON increases significantly from 0.022 to 0.404 with increasing O2 gas flow rate from 0 to 5 sccm, whereas βN of N atoms on ZnInON decreases slightly from 0.018 to 0.006. The stoichiometric chemical compositional ratio of ZnInON films with [Zn]/([Zn] + [In]) = [O]/([O] + [N]) = 94% is obtained at βO=0.404 of O atoms. This stoichiometric compositional ZnInON films grow coherently on ZnO templates, while nonstoichiometric films do not. The stoichiometric chemical composition is the key to coherent growth of ZnInON films.
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U2 - 10.1109/TPS.2016.2632124
DO - 10.1109/TPS.2016.2632124
M3 - Article
AN - SCOPUS:85010197149
SN - 0093-3813
VL - 45
SP - 323
EP - 327
JO - IEEE Transactions on Plasma Science
JF - IEEE Transactions on Plasma Science
IS - 2
M1 - 7828157
ER -