We report densities and surface reaction probabilities of O and N atoms during sputter deposition of ZnInON films on ZnO templates, measured via vacuum ultraviolet absorption spectroscopy. O density is almost constant of 4.5 × 1011 cm-3 irrespective of O2 gas flow rate, whereas N density increases sharply from 2.7 × 1011 cm-3 for O2 gas sccm to 7.7 × 1011 cm-3 for 0.6 sccm and it increases gradually 1011 cm-3 for 5 sccm. The surface reaction probability βO of O atoms on ZnInON increases significantly from 0.022 to 0.404 with increasing O2 gas flow rate from 0 to 5 sccm, whereas βN of N atoms on ZnInON decreases slightly from 0.018 to 0.006. The stoichiometric chemical compositional ratio of ZnInON films with [Zn]/([Zn] + [In]) = [O]/([O] + [N]) = 94% is obtained at βO=0.404 of O atoms. This stoichiometric compositional ZnInON films grow coherently on ZnO templates, while nonstoichiometric films do not. The stoichiometric chemical composition is the key to coherent growth of ZnInON films.
All Science Journal Classification (ASJC) codes
- Nuclear and High Energy Physics
- Condensed Matter Physics