TY - JOUR
T1 - Dependence of Cu/In ratio of structural and electrical characterization of CuInS 2 crystal
AU - Yoshino, K.
AU - Nomoto, K.
AU - Kinoshita, A.
AU - Ikari, T.
AU - Akaki, Y.
AU - Yoshitake, T.
N1 - Funding Information:
Acknowledgements The authors would like to thank Dr. H. Miyake of Mie University for his useful discussions. This work was in part supported by The Iwatani Naoji Foundation’s Research Grant.
PY - 2008/4
Y1 - 2008/4
N2 - CuInS 2 crystals were successfully grown by the Hot-Press method at 700 °C for 1 h under high pressure in Cu-rich region. The In-rich samples were found to contain a small amount of secondary phase (CuIn 5S 8). Crystalline grain sizes in the In-rich region increased with increasing Cu/In ratio, whereas they remained constant in the Cu-rich region. All samples exhibited a low Sulfur concentration. This indicated that Cu atoms on In sites and In interstitials, and/or S vacancies might lead to an enhancement in electrical conductivity in both p- and n-type material.
AB - CuInS 2 crystals were successfully grown by the Hot-Press method at 700 °C for 1 h under high pressure in Cu-rich region. The In-rich samples were found to contain a small amount of secondary phase (CuIn 5S 8). Crystalline grain sizes in the In-rich region increased with increasing Cu/In ratio, whereas they remained constant in the Cu-rich region. All samples exhibited a low Sulfur concentration. This indicated that Cu atoms on In sites and In interstitials, and/or S vacancies might lead to an enhancement in electrical conductivity in both p- and n-type material.
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U2 - 10.1007/s10854-007-9334-1
DO - 10.1007/s10854-007-9334-1
M3 - Article
AN - SCOPUS:39149102900
SN - 0957-4522
VL - 19
SP - 301
EP - 304
JO - Journal of Materials Science: Materials in Electronics
JF - Journal of Materials Science: Materials in Electronics
IS - 4
ER -