Dependence of Cu/In ratio of structural and electrical characterization of CuInS 2 crystal

K. Yoshino, K. Nomoto, A. Kinoshita, T. Ikari, Y. Akaki, T. Yoshitake

    Research output: Contribution to journalArticle

    25 Citations (Scopus)

    Abstract

    CuInS 2 crystals were successfully grown by the Hot-Press method at 700 °C for 1 h under high pressure in Cu-rich region. The In-rich samples were found to contain a small amount of secondary phase (CuIn 5S 8). Crystalline grain sizes in the In-rich region increased with increasing Cu/In ratio, whereas they remained constant in the Cu-rich region. All samples exhibited a low Sulfur concentration. This indicated that Cu atoms on In sites and In interstitials, and/or S vacancies might lead to an enhancement in electrical conductivity in both p- and n-type material.

    Original languageEnglish
    Pages (from-to)301-304
    Number of pages4
    JournalJournal of Materials Science: Materials in Electronics
    Volume19
    Issue number4
    DOIs
    Publication statusPublished - Apr 1 2008

    All Science Journal Classification (ASJC) codes

    • Electronic, Optical and Magnetic Materials
    • Atomic and Molecular Physics, and Optics
    • Condensed Matter Physics
    • Electrical and Electronic Engineering

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