Dependence of Cu/In ratio of structural and electrical characterization of CuInS 2 crystal

K. Yoshino, K. Nomoto, A. Kinoshita, T. Ikari, Y. Akaki, Tsuyoshi Yoshitake

    Research output: Contribution to journalArticle

    24 Citations (Scopus)

    Abstract

    CuInS 2 crystals were successfully grown by the Hot-Press method at 700 °C for 1 h under high pressure in Cu-rich region. The In-rich samples were found to contain a small amount of secondary phase (CuIn 5S 8). Crystalline grain sizes in the In-rich region increased with increasing Cu/In ratio, whereas they remained constant in the Cu-rich region. All samples exhibited a low Sulfur concentration. This indicated that Cu atoms on In sites and In interstitials, and/or S vacancies might lead to an enhancement in electrical conductivity in both p- and n-type material.

    Original languageEnglish
    Pages (from-to)301-304
    Number of pages4
    JournalJournal of Materials Science: Materials in Electronics
    Volume19
    Issue number4
    DOIs
    Publication statusPublished - Apr 1 2008

    Fingerprint

    Sulfur
    Vacancies
    Crystalline materials
    Atoms
    Crystals
    crystals
    interstitials
    sulfur
    grain size
    electrical resistivity
    augmentation
    atoms
    Electric Conductivity

    All Science Journal Classification (ASJC) codes

    • Electronic, Optical and Magnetic Materials
    • Atomic and Molecular Physics, and Optics
    • Condensed Matter Physics
    • Electrical and Electronic Engineering

    Cite this

    Dependence of Cu/In ratio of structural and electrical characterization of CuInS 2 crystal. / Yoshino, K.; Nomoto, K.; Kinoshita, A.; Ikari, T.; Akaki, Y.; Yoshitake, Tsuyoshi.

    In: Journal of Materials Science: Materials in Electronics, Vol. 19, No. 4, 01.04.2008, p. 301-304.

    Research output: Contribution to journalArticle

    Yoshino, K. ; Nomoto, K. ; Kinoshita, A. ; Ikari, T. ; Akaki, Y. ; Yoshitake, Tsuyoshi. / Dependence of Cu/In ratio of structural and electrical characterization of CuInS 2 crystal. In: Journal of Materials Science: Materials in Electronics. 2008 ; Vol. 19, No. 4. pp. 301-304.
    @article{5f8f536ec6a24474bad009e5820f693c,
    title = "Dependence of Cu/In ratio of structural and electrical characterization of CuInS 2 crystal",
    abstract = "CuInS 2 crystals were successfully grown by the Hot-Press method at 700 °C for 1 h under high pressure in Cu-rich region. The In-rich samples were found to contain a small amount of secondary phase (CuIn 5S 8). Crystalline grain sizes in the In-rich region increased with increasing Cu/In ratio, whereas they remained constant in the Cu-rich region. All samples exhibited a low Sulfur concentration. This indicated that Cu atoms on In sites and In interstitials, and/or S vacancies might lead to an enhancement in electrical conductivity in both p- and n-type material.",
    author = "K. Yoshino and K. Nomoto and A. Kinoshita and T. Ikari and Y. Akaki and Tsuyoshi Yoshitake",
    year = "2008",
    month = "4",
    day = "1",
    doi = "10.1007/s10854-007-9334-1",
    language = "English",
    volume = "19",
    pages = "301--304",
    journal = "Journal of Materials Science: Materials in Electronics",
    issn = "0957-4522",
    publisher = "Springer New York",
    number = "4",

    }

    TY - JOUR

    T1 - Dependence of Cu/In ratio of structural and electrical characterization of CuInS 2 crystal

    AU - Yoshino, K.

    AU - Nomoto, K.

    AU - Kinoshita, A.

    AU - Ikari, T.

    AU - Akaki, Y.

    AU - Yoshitake, Tsuyoshi

    PY - 2008/4/1

    Y1 - 2008/4/1

    N2 - CuInS 2 crystals were successfully grown by the Hot-Press method at 700 °C for 1 h under high pressure in Cu-rich region. The In-rich samples were found to contain a small amount of secondary phase (CuIn 5S 8). Crystalline grain sizes in the In-rich region increased with increasing Cu/In ratio, whereas they remained constant in the Cu-rich region. All samples exhibited a low Sulfur concentration. This indicated that Cu atoms on In sites and In interstitials, and/or S vacancies might lead to an enhancement in electrical conductivity in both p- and n-type material.

    AB - CuInS 2 crystals were successfully grown by the Hot-Press method at 700 °C for 1 h under high pressure in Cu-rich region. The In-rich samples were found to contain a small amount of secondary phase (CuIn 5S 8). Crystalline grain sizes in the In-rich region increased with increasing Cu/In ratio, whereas they remained constant in the Cu-rich region. All samples exhibited a low Sulfur concentration. This indicated that Cu atoms on In sites and In interstitials, and/or S vacancies might lead to an enhancement in electrical conductivity in both p- and n-type material.

    UR - http://www.scopus.com/inward/record.url?scp=39149102900&partnerID=8YFLogxK

    UR - http://www.scopus.com/inward/citedby.url?scp=39149102900&partnerID=8YFLogxK

    U2 - 10.1007/s10854-007-9334-1

    DO - 10.1007/s10854-007-9334-1

    M3 - Article

    AN - SCOPUS:39149102900

    VL - 19

    SP - 301

    EP - 304

    JO - Journal of Materials Science: Materials in Electronics

    JF - Journal of Materials Science: Materials in Electronics

    SN - 0957-4522

    IS - 4

    ER -