Dependence of GaN removal rate of plasma chemical vaporization machining on mechanically introduced damage

Yasuhisa Sano, Toshiro K. Doi, Syuhei Kurokawa, Hideo Aida, Osamu Ohnishi, Michio Uneda, Kousuke Shiozawa, Yu Okada, Kazuto Yamauchi

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Abstract

A high-efficiency planarization method combining atmospheric-pressure plasma etching [plasma chemical vaporization machining (PCVM)] and mechanical polishing is proposed. The convex part of a substrate surface, considered to be affected by mechanical action, is removed preferentially by PCVM. However, it is not evident whether the PCVM removal rate of the damaged layer of a gallium nitride (GaN) substrate increases. In this study, the dependence of removal rate on removal depth is investigated using a GaN substrate with a damaged layer. As a result, the removal rate of the damaged layer is observed to be three or four times greater than that of deep undamaged layers.

Original languageEnglish
Pages (from-to)429-434
Number of pages6
JournalSensors and Materials
Volume26
Issue number6
Publication statusPublished - 2014

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All Science Journal Classification (ASJC) codes

  • Instrumentation
  • Materials Science(all)

Cite this

Sano, Y., Doi, T. K., Kurokawa, S., Aida, H., Ohnishi, O., Uneda, M., ... Yamauchi, K. (2014). Dependence of GaN removal rate of plasma chemical vaporization machining on mechanically introduced damage. Sensors and Materials, 26(6), 429-434.